Abstract: A diffuser is provided with a recess-protrusion structure formed on a plane. When a z-axis is defined as a normal to the plane, an x-axis is defined on the plane, the x-axis is divided into plural intervals, Snx represents length of an interval nx, Sx-max and Sx-min represent the maximum and the minimum of Snx, respectively, the relationship 2<Sx-max/Sx-min holds, Snx varies on a random basis between Sx-min and Sx-max, in an xz cross section, a recess portion and a protrusion portion are formed on each of adjacent intervals along the x-axis, respectively, and when dznx represents a difference between the maximum and the minimum of z coordinate of the recess-protrusion structure in the interval nx in the xz cross section, Anx represents a ratio between dznx and Snx, Anx-max and Anx-min represent the maximum and the minimum of Anx, the relationship Ax-max/Ax-min<1.3 holds.

Abstract: A motor control system includes a motor, a resolver configured to detect a rotation angle of the motor, a resolver/digital converter configured to convert an analog angle signal output from the resolver into a digital angle signal, and a motor control unit configured to control the motor based on the digital angle signal output from the resolver/digital converter and determine, when an integrated value obtained by integrating the digital angle signal at a predetermined time interval is not within a threshold range, that the resolver/digital converter is abnormal. The motor control unit increases the time interval for the integration when a rotation speed of the motor decreases and decreases the time interval for the integration when the rotation speed of the motor increases.

Abstract: A method for manufacturing a mold according to the first aspect of the present invention includes the steps of: placing a base material of semiconductor or metal that reacts with sulfur hexafluoride in a reactive ion etching apparatus; supplying a mixed gas of sulfur hexafluoride and oxygen thereto; making the base material undergo a plasma dry-etching process such that oxides are scattered on a surface of the base material, etching advances on the surface of the base material while the oxides function as etching masks, and thereby a fine surface roughness is formed on the surface of the base material; and irradiating the fine surface roughness with an ion beam such that shapes of protrusions of the fine surface roughness can be adjusted.

Abstract: A method for manufacturing a mold or an optical element provided with a fine surface roughness for anti-reflection or for diffusing, may include placing a substrate or a film made of a semiconductor or a metal into a reacting etching apparatus, introducing a mixed gas of sulfur hexafluoride and oxygen into the etching apparatus with the substrate or the film, tuning the mixed gas into plasma such that oxides are made to be scattered on a surface of the substrate or the film, and etching the surface of the substrate of the film by the sulfur hexafluoride while the oxides function as an etching mask to form the fine surface roughness on the surface of the substrate or the film. Further, etching conditions may be determined such that the pitch of the fine surface roughness is made from 3 to 18 micrometers.

Abstract: A package includes a conductor base plate having a element fixed to an upper surface thereof, a side wall provided on the conductor base plate to surround the element, the side wall having a conductor portion electrically connected to the conductor base plate, a dielectric cap disposed on the side wall, a front-side metal film provided on an outer surface of the dielectric cap, a first back-side metal film provided on an inner surface of the dielectric cap such that a center of the first back-side metal film approximately coincides with a center of a surface of the dielectric cap which faces the conductor base plate, and a plurality of vias passing through the dielectric cap to achieve electrical connection between the front-side metal film and the first back-side metal film and between the front-side metal film and the conductor portion oldie side wall.

Abstract: A walking training system includes: a treadmill on which a walking trainee walks; a walking assistance apparatus that is mounted on a leg part of the walking trainee and assists walking of the walking trainee; and control means for controlling an operation of the walking assistance apparatus. The control means controls the operation of the walking assistance apparatus so as to cause the walking trainee to approach a reference position when the trainee is spaced apart from the reference position of the treadmill by a predetermined distance or more in a walking front/back direction while the walking trainee is walking on the treadmill, and increases the predetermined distance when at least one of a walking training amount of the walking trainee, a walking training level of the walking trainee set in the walking training system, and the speed of the treadmill is larger/higher/greater than a predetermined amount, level, and speed.

Abstract: A memory control device includes a memory control part that controls memory through an interface part in accordance with a predetermined communication regulation, an illegal access detection part that detects an illegal access to the memory according to an access state from the memory control part to the memory and a signal state of the interface part, and a signal control part that switches the signal state of the interface part from a write-allowed state, in which the interface part is able to be written, to a write-inhibited state, in which the interface part is protected from being rewritten, when the illegal access is detected by the illegal access detection part.

Abstract: A sheet loader includes a sheet loading part and a sheet length detector. The sheet loading part has a loading face on which a sheet is loaded. The sheet length detector is provided to the sheet loading part to detect a length of the sheet by obtaining information whether the loading face either contacts or approaches a surface of the sheet disposed facing the loading face at a given position on the loading face in a sheet conveying direction of the sheet loading part. The sheet length detector includes multiple projections retreatably extending outward beyond the loading face of the sheet loading part, and a projection retreating detector detecting whether the multiple projections are retreated under the loading face. At least one of the multiple projections is disposed closer to an upstream end of the sheet loading part than the other.

Abstract: A motor control system includes a motor, a resolver configured to detect a rotation angle of the motor, a resolver/digital converter configured to convert an analog angle signal output from the resolver into a digital angle signal, and a motor control unit configured to control the motor based on the digital angle signal output from the resolver/digital converter and determine, when an integrated value obtained by integrating the digital angle signal at a predetermined time interval is not within a threshold range, that the resolver/digital converter is abnormal. The motor control unit increases the time interval for the integration when a rotation speed of the motor decreases and decreases the time interval for the integration when the rotation speed of the motor increases.

Abstract: A notification apparatus according to an example aspect of the invention includes a memory that stores instructions; and at least one processor coupled to the memory, the at least one processor being configured to executing the instructions to: determine a second terminal from a plurality of terminals based on a distance between each of the plurality of terminals and a first terminal in a particular state; and perform a notification to a manager of the second terminal, the notification relating to a situation where the first terminal is in the particular state.

Abstract: A method for manufacturing a mold according to the first aspect of the present invention includes the steps of: placing a base material of semiconductor or metal that reacts with sulfur hexafluoride in a reactive ion etching apparatus; supplying a mixed gas of sulfur hexafluoride and oxygen thereto; making the base material undergo a plasma dry-etching process such that oxides are scattered on a surface of the base material, etching advances on the surface of the base material while the oxides function as etching masks, and thereby a fine surface roughness is formed on the surface of the base material; and irradiating the fine surface roughness with an ion beam such that shapes of protrusions of the fine surface roughness can be adjusted.

Abstract: An autonomous mobile object includes: a moving mechanism; a power-receiving terminal that is supplied with power from a power-supply terminal; an imaging unit configured to image the power-supply terminal at a position separated from the power-supply terminal by more than a distance at which the power-receiving terminal is capable of being supplied with power from the power-supply terminal; a determination unit configured to determine whether to remove contamination of the power-supply terminal based on an analysis result obtained by analyzing the image captured by the imaging unit and information on misalignment between the power-supply terminal and the power-receiving terminal, the misalignment being predicted when the autonomous mobile object moves to a position at which the power-receiving terminal is capable of being supplied with power from the power-supply terminal; and a removal unit configured to remove the contamination when the determination unit determines to remove the contamination.

Abstract: A board-type noise filter having higher noise removal performance than that of a conventional noise filter, and an electronic device including the board-type noise filter are provided. The board-type noise filter includes: a printed wiring board having a wiring pattern formed thereon; a choke coil including a core having a toroidal shape; a frame ground portion fixed to the printed wiring board at a position overlapping with a hollow portion of the choke coil when the toroidal shape of the choke coil is seen in plan view, the frame ground portion being capable of being grounded to a frame ground; and a capacitor having a first terminal connected to the frame ground portion through the wiring pattern.

Abstract: A method for manufacturing a mold or an optical element provided with a fine surface roughness for anti-reflection or for diffusing, may include placing a substrate or a film made of a semiconductor or a metal into a reacting etching apparatus, introducing a mixed gas of sulfur hexafluoride and oxygen into the etching apparatus with the substrate or the film, tuning the mixed gas into plasma such that oxides are made to be scattered on a surface of the substrate or the film, and etching the surface of the substrate of the film by the sulfur hexafluoride while the oxides function as an etching mask to form the fine surface roughness on the surface of the substrate or the film. Further, etching conditions may be determined such that the pitch of the fine surface roughness is made from 3 to 18 micrometers.

Abstract: A semiconductor device includes: a depletion-type field-effect transistor including a gate terminal, a drain terminal and a source terminal; a group III-V heterojunction bipolar transistor including a base terminal, an emitter terminal electrically connected to the gate terminal and a collector terminal connected to same potential as that of the source terminal; a first resistor connected between the base terminal and the emitter terminal; and a second resistor connected between the base terminal and the collector terminal.

Abstract: A diffuser is provided with a recess-protrusion structure formed on a plane. When a z-axis is defined as a normal to the plane, an x-axis is defined on the plane, the x-axis is divided into plural intervals, Snx represents length of an interval nx, Sx-max and Sx-min represent the maximum and the minimum of Snx, respectively, the relationship 2<Sx-max/Sx-min holds, Snx varies on a random basis between Sx-min and Sx-max, in an xz cross section, a recess portion and a protrusion portion are formed on each of adjacent intervals along the x-axis, respectively, and when dznx represents a difference between the maximum and the minimum of z coordinate of the recess-protrusion structure in the interval nx in the xz cross section, Anx represents a ratio between dznx and Snx, Anx-max and Anx-min represent the maximum and the minimum of Anx, the relationship Ax-max/Ax-min<1.3 holds.

Abstract: A memory control device includes a memory control part that controls memory through an interface part in accordance with a predetermined communication regulation, an illegal access detection part that detects an illegal access to the memory according to an access state from the memory control part to the memory and a signal state of the interface part, and a signal control part that switches the signal state of the interface part from a write-allowed state, in which the interface part is able to be written, to a write-inhibited state, in which the interface part is protected from being rewritten, when the illegal access is detected by the illegal access detection part.

Abstract: In the present invention, in addition to arranging a plurality of amplifying elements in a staggered manner, signal path lengths from an input-side divider to gate pads of the plurality of amplifying elements are equalized, and signal path lengths from drain pads of the plurality of amplifying elements to an output-side combiner are equalized.

Abstract: A field-effect transistor with protection diodes includes: a field-effect transistor; and a two-terminal electrostatic protection circuit connected between a gate and a source of the field-effect transistor, wherein the two-terminal electrostatic protection circuit comprises: a first diode that is positioned on a reverse-biased side when a voltage lower than a potential of the source is applied to the gate and has a reverse withstand voltage lower than a reverse withstand voltage between the gate and the source of the field-effect transistor; a second diode that is positioned on a forward-biased side when a voltage lower than a potential of the source is applied to the gate and is connected in anti-series to the first diode; and a resistor that is connected in series to a diode pair comprising the first diode and the second diode and formed using a same channel layer as that of the field-effect transistor.

Abstract: An ESD protection circuit is connected in parallel to a MIM capacitor between a first terminal and a second terminal. First Schottky diodes are connected in series to each other and have anodes connected on the first terminal side and cathodes connected on the second terminal side. Second Schottky diodes are connected in series to each other and connected in anti-parallel to the first Schottky diodes. When an RF signal is inputted to neither the first terminal nor the second terminal, the first terminal has a higher DC voltage than that of the second terminal. The number of the first Schottky diodes is greater than the number of the second Schottky diodes. The number of the second Schottky diodes is set such that an amplitude of the RF signal does not attenuate to predetermined amplitude of the RF signal when the RF signal passes through the MIM capacitor.