Abstract: A method of forming Cu plating of the present invention includes: a first step of forming a Cu seed layer on one of surfaces of a substrate such that an average grain size is 50 nm or more and 300 nm or less; a second step of forming an oxide film on a surface of the Cu seed layer in an oxygen atmosphere; a third step of removing a part of the oxide film; and a fourth step of feeding power to the Cu seed layer to form Cu plating on a surface of the oxide film on the Cu seed layer by electrolytic plating.

Abstract: A method of forming Cu plating of the present invention includes: a first step of forming a Cu seed layer on one of surfaces of a substrate such that an average grain size is 50 nm or more and 300 nm or less; a second step of forming an oxide film on a surface of the Cu seed layer in an oxygen atmosphere; a third step of removing a part of the oxide film; and a fourth step of feeding power to the Cu seed layer to form Cu plating on a surface of the oxide film on the Cu seed layer by electrolytic plating.

Abstract: A semiconductor device capable of inhibiting oxidation of a Cu wiring even in a high temperature operation. The semiconductor device includes a semiconductor substrate having a main surface, a Cu electrode which is selectively formed on a side of the main surface of the semiconductor substrate, an antioxidant film formed on an upper surface of the Cu electrode except an end portion thereof, an organic resin film which is formed on the main surface of the semiconductor substrate and covers a side surface of the Cu electrode and the end portion of the upper surface thereof, and a diffusion prevention film formed between the organic resin film and the main surface of the semiconductor substrate and between the organic resin film and the side surface and the end portion of the upper surface of the Cu electrode, being in contact therewith.

Abstract: A semiconductor device capable of inhibiting oxidation of a Cu wiring even in a high temperature operation. The semiconductor device includes a semiconductor substrate having a main surface, a Cu electrode which is selectively formed on a side of the main surface of the semiconductor substrate, an antioxidant film formed on an upper surface of the Cu electrode except an end portion thereof, an organic resin film which is formed on the main surface of the semiconductor substrate and covers a side surface of the Cu electrode and the end portion of the upper surface thereof, and a diffusion prevention film formed between the organic resin film and the main surface of the semiconductor substrate and between the organic resin film and the side surface and the end portion of the upper surface of the Cu electrode, being in contact therewith.

Abstract: A plurality of semiconductor element is formed on a substrate. A plurality of sealing windows and a support portion supporting the plurality of sealing windows are formed on a SOI substrate. The SOI substrate is pressured against the substrate by using a pressurizing member and the plurality of sealing windows of the SOI substrate is bonded to the substrate via a low melting point glass member arranged around the plurality of semiconductor elements. The support portion is separated from the plurality of sealing windows bonded to the substrate.

Abstract: A plurality of semiconductor element is formed on a substrate. A plurality of sealing windows and a support portion supporting the plurality of sealing windows are formed on a SOI substrate. The SOI substrate is pressured against the substrate by using a pressurizing member and the plurality of sealing windows of the SOI substrate is bonded to the substrate via a low melting point glass member arranged around the plurality of semiconductor elements. The support portion is separated from the plurality of sealing windows bonded to the substrate.

Abstract: A semiconductor device includes: a substrate; a semiconductor element on the substrate; an interconnection on the substrate and electrically connected to the semiconductor element; a window frame member on the substrate, surrounding the semiconductor element, and in contact with the interconnection; and a sealing window bonded to the window frame member and encapsulating the semiconductor element. The window frame member is a low melting glass and has a sheet resistance of 106-1010 ?/?.

Abstract: A solar cell module is obtained by the following method. In a step of sealing a solar cell module using laminated glass, a solar cell and a translucent intermediate film layer which seals the solar cell are interposed between a front side glass substrate and a rear side glass substrate. A sealing member in which an insertion part and an exterior part are formed by folding a sealing sheet having a bonding surface on one side, is employed in the module peripheral edge. The insertion part is inserted between the front side glass substrate and the rear side glass substrate, and bonding surfaces thereof are bonded to the front side glass substrate and the rear side glass substrate. A bonding surface of the exterior part is bonded to an end face of at least either of the front side glass substrate and the rear side glass substrate.

Abstract: A semiconductor device includes: a substrate; a semiconductor element on the substrate; an interconnection on the substrate and electrically connected to the semiconductor element; a window frame member on the substrate, surrounding the semiconductor element, and in contact with the interconnection; and a sealing window bonded to the window frame member and encapsulating the semiconductor element. The window frame member is a low melting glass and has a sheet resistance of 106-1010 ?/?.

Abstract: A thin-film solar battery module that can avoid a decrease in power generation efficiency caused by influences of meandering of a wiring material, relax a stress due to a difference in a thermal expansion coefficient between a substrate material and the wiring material, and suppress warpage of a substrate and separation of a joined part of an electrode and a wiring. The thin-film solar battery module includes a thin-film solar battery device including serially connecting a plurality of thin-film solar battery cells to each other and a bus bar wiring provided at a positive-side end and a negative-side end of the thin-film solar battery device. Additionally, the bus bar wiring couples a plurality of conductive members to each other in a partially superimposed manner.