Abstract: It is an object of the present invention to form a resist film that is highly sensitive and enables high-resolution patterning. The present invention relates to a resist material that comprises a polymer comprising a unit derived from a structure represented by the following formula (101). In the formula (101), R1 each independently represents a hydrogen atom, an alkyl group optionally having a substituent, an acyl group optionally having a substituent, an allyl group optionally having a substituent, an alkoxy group optionally having a substituent, or an alkylsilyl group optionally having a substituent, and a plurality of R1 may be the same or different. R11 represents a hydrogen atom or an alkyl group optionally having a substituent. R2 represents a hydrogen atom, an alkyl group, a fluorine atom, a chlorine atom, a bromine atom, or a halogenated alkyl group; and Y1 represents a single bond or a linking group.

Abstract: It is an object of the present invention to provide a method of forming a high-contrast fine pattern onto a resist film. The present invention relates to a pattern forming method, comprising; applying a resist material onto a substrate to form a resist film, introducing a metal into the resist film, exposing, and developing. In addition, the present invention also relates to a resist material and a pattern forming apparatus.

Abstract: It is an object of the present invention to provide a self-assembly composition for pattern formation having a wide range of applicable pattern size and being capable of forming a favorable phase-separated structure.

Abstract: It is an object of the present invention to provide a pattern forming method capable of easily forming a phase-separated structure with high accuracy, even in the case of widening the applicable range of a pattern size. The present invention relates to a pattern forming method comprising: applying an under coating agent onto a substrate, and applying a self-assembly composition for pattern formation to the surface of the substrate, onto which the under coating agent has been applied, and then forming a self-assembly film according to self-assembly phase separation, wherein the self-assembly composition for pattern formation comprises a block copolymer comprising a polymerization unit (a) having at least one selected from a structure represented by a formula (103) and a structure represented by a formula (104), and a polymerization unit (b) having a structure represented by a formula (105).

Abstract: It is an object of the present invention to provide a self-assembly composition for pattern formation having a wide range of applicable pattern size and being capable of forming a favorable phase-separated structure.

Abstract: The present invention provides an underlayer film-forming composition in which the material used is dissolved in an organic solvent, and which is capable of forming an underlayer film that is not prone to cracking under the atmosphere and by heat treatment at a relatively low temperature and which is increasing the coated film residual rate upon forming the underlayer film. An underlayer film-forming composition for forming an underlayer film used for pattern formation, which comprises a copolymer and an organic solvent; the copolymer comprises a polymer moiety (a) and a polymer moiety (b); the polymer moiety (a) comprises a saccharide derivative moiety; the saccharide derivative moiety is at least one of a pentose derivative moiety or a hexose derivative moiety; and the polymer moiety (b) comprises no saccharide derivative moiety.

Abstract: An object of the present invention is to provide a self-assembly composition for pattern formation, which is capable of forming a favorable phase-separated structure even in the case of forming a large size pattern. In addition, another object of the present invention is to provide a self-assembly composition for pattern formation, which is capable of forming a pattern by a simple process, with no need for preparation of a under layer, etc., upon formation of a fine pattern structure. The present invention relates to a self-assembly composition for pattern formation, which comprises a block copolymer comprising a polymerization unit (a) comprising two or more units consisting of at least one type selected from a glucose unit and a xylose unit, and a polymerization unit (b) comprising two or more units consisting of at least one type selected from an aromatic ring-containing unit, a silicon-containing unit and a metal-containing unit.

Abstract: An object of the present invention is to provide a pattern-forming film having excellent etching resistance. The present invention relates to a pattern-forming material including a polymer containing oxygen atoms, in which the polymer has an oxygen atom content of 20% by mass or more with respect to the total mass of the polymer, and the polymer has a silicon atom content of 10% by mass or less with respect to the total mass of the polymer.

Abstract: An object of the present invention is to provide an underlayer film-forming composition capable of forming an underlayer film which remains with a high proportion in an organic solvent, has a low UV reflectivity, and is excellent in etching resistance. The present invention relates to an underlayer film-forming composition, which contains a copolymer and an organic solvent and is used for patterning, wherein the copolymer contains: (a) a unit derived from a sugar derivative; (b) a unit derived from a compound having a light antireflection function; and (c) a unit derived from a compound capable of cross-coupling the copolymer, the unit derived from a sugar derivative (a) is at least one selected from a unit derived from a pentose derivative and a unit derived from a hexose derivative, and the underlayer film-forming composition is used for metal introduction.

Abstract: It is an object of the present invention to provide a pattern forming method capable of easily forming a phase-separated structure with high accuracy, even in the case of widening the applicable range of a pattern size. The present invention relates to a pattern forming method comprising: applying an under coating agent onto a substrate, and applying a self-assembly composition for pattern formation to the surface of the substrate, onto which the under coating agent has been applied, and then forming a self-assembly film according to self-assembly phase separation, wherein the self-assembly composition for pattern formation comprises a block copolymer comprising a polymerization unit (a) having at least one selected from a structure represented by a formula (103) and a structure represented by a formula (104), and a polymerization unit (b) having a structure represented by a formula (105).

Abstract: It is an object of the present invention to provide a self-assembly composition for pattern formation having a wide range of applicable pattern size and being capable of forming a favorable phase-separated structure.

Abstract: An object of the present invention is to provide a self-assembly composition for pattern formation, which is capable of forming a favorable phase-separated structure even in the case of forming a large size pattern. In addition, another object of the present invention is to provide a self-assembly composition for pattern formation, which is capable of forming a pattern by a simple process, with no need for preparation of a under layer, etc., upon formation of a fine pattern structure. The present invention relates to a self-assembly composition for pattern formation, which comprises a block copolymer comprising a polymerization unit (a) comprising two or more units consisting of at least one type selected from a glucose unit and a xylose unit, and a polymerization unit (b) comprising two or more units consisting of at least one type selected from an aromatic ring-containing unit, a silicon-containing unit and a metal-containing unit.

Abstract: According to one embodiment, an ultraviolet curing curable resin material for pattern transfer is provided. The resin contains isobornyl acrylate, an acrylate having a fluorene skeleton, a polyfunctional acrylate, and a polymerization initiator.

Abstract: According to one embodiment, an ultraviolet curing curable resin material for pattern transfer is provided. The resin contains isobornyl acrylate, an acrylate having a fluorene skeleton, a polyfunctional acrylate, and a polymerization initiator.

Abstract: According to one embodiment, an ultraviolet curing curable resin material for pattern transfer is provided. The resin contains isobornyl acrylate, an acrylate having a fluorene skeleton, a polyfunctional acrylate, and a polymerization initiator.