Patents by Inventor Kazuyo Nakamura
Kazuyo Nakamura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9236503Abstract: A connection part for connecting an interconnector is separated from a region having a photoelectric conversion layer formed thereon to improve a strength of the connection pad, thereby provide a solar cell suppressing cracks, breaks, and the like. A solar cell includes a photoelectric conversion layer, an electrode pad formed on the photoelectric conversion layer, an interconnector connected to the electrode pad, a metal thin film formed under the photoelectric conversion layer, a relay terminal being spaced apart from the photoelectric conversion layer and the metal thin film and connected to the metal thin film by connection conductor, and a connection pad formed on the relay terminal.Type: GrantFiled: October 17, 2011Date of Patent: January 12, 2016Assignee: Sharp Kabushiki KaishaInventors: Hiroshi Yamaguchi, Kazuyo Nakamura
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Publication number: 20130206228Abstract: A connection part for connecting an interconnector is separated from a region having a photoelectric conversion layer formed thereon to improve a strength of the connection pad, thereby provide a solar cell suppressing cracks, breaks, and the like. A solar cell includes a photoelectric conversion layer, an electrode pad formed on the photoelectric conversion layer, an interconnector connected to the electrode pad, a metal thin film formed under the photoelectric conversion layer, a relay terminal being spaced apart from the photoelectric conversion layer and the metal thin film and connected to the metal thin film by connection conductor, and a connection pad formed on the relay terminal.Type: ApplicationFiled: October 17, 2011Publication date: August 15, 2013Applicant: SHARP KABUSHIKI KAISHAInventors: Hiroshi Yamaguchi, Kazuyo Nakamura
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Publication number: 20090283127Abstract: Disclosed is a method of manufacturing a photoelectric conversion element including a substrate and a stacked body configured of a plurality of compound semiconductor layers of different compositions sequentially stacked on the substrate, and having at least one pn junction in the stacked body. This method includes the steps of forming the stacked body configured of the plurality of compound semiconductor layers of different compositions sequentially stacked on the substrate; forming a protective film on the stacked body; forming a groove by removing at least a portion of the stacked body by at least one method selected from the group consisting of a mechanical removing method, dry etching and laser scribing; etching a side wall of the groove using an etching solution after forming the protective film and the groove; and cutting a portion corresponding to the groove for separation into a plurality of photoelectric conversion elements.Type: ApplicationFiled: July 12, 2006Publication date: November 19, 2009Inventors: Hiroyuki Juso, Atsushi Yoshida, Kazuyo Nakamura, Hidetoshi Washio, Naoki Takahashi, Tatsuya Takamoto
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Patent number: 6799742Abstract: The object of the invention is to provide a solar panel and a method for manufacturing the same, wherein the manufacture of the solar panel for use in space and repair work thereon can be performed easily and in little time. An entirety of the solar panel is configured by detachably linking a plurality of unit solar cell modules, which include a plurality of solar cells and connection wires for connecting the solar cells, and electrically connecting the unit solar cell modules to one another. Thus, a solar panel can be easily fabricated by combining standardized unit solar cell modules. Moreover, by simply mechanically connecting the unit solar cell modules, they can be electrically connected, and thus the time necessary for manufacture or repair of solar panels can be shortened.Type: GrantFiled: December 4, 2001Date of Patent: October 5, 2004Assignee: Sharp Kabushiki KaishaInventors: Kazuyo Nakamura, Tatsuo Saga, Kunio Kamimura, Tadashi Hisamatsu
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Patent number: 6504091Abstract: A photoelectric converting device is provided with enhanced photoelectric conversion efficiency by optimizing a combination of materials used for top and bottom cells. The photoelectric converting device of the present invention is provided with first and second pn junctions. The first pn junction is formed in a semiconductor substantially represented by (Al1-yGay)1-xInxP, and the second pn junction is formed in a semiconductor substantially represented by Ga1-zInzAs.Type: GrantFiled: February 9, 2001Date of Patent: January 7, 2003Assignee: Sharp Kabushiki KaishaInventors: Tadashi Hisamatsu, Kazuyo Nakamura, Yuji Komatsu, Masafumi Shimizu
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Publication number: 20020066828Abstract: The object of the invention is to provide a solar panel and a method for manufacturing the same, wherein the manufacture of the solar panel for use in space and repair work thereon can be performed easily and in little time. An entirety of the solar panel is configured by detachably linking a plurality of unit solar cell modules, which include a plurality of solar cells and connection wires for connecting the solar cells, and electrically connecting the unit solar cellmodules to one another. Thus, a solar panel can be easily fabricated by combining standardized unit solar cellmodules. Moreover, by simply mechanically connecting the unit solar cell modules, they can be electrically connected, and thus the time necessary for manufacture or repair of solar panels can be shortened.Type: ApplicationFiled: December 4, 2001Publication date: June 6, 2002Inventors: Kazuyo Nakamura, Tatsuo Saga, Kunio Kamimura, Tadashi Hisamatsu
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Publication number: 20010018924Abstract: A photoelectric converting device is provided with enhanced photoelectric conversion efficiency by optimizing a combination of materials used for top and bottom cells. The photoelectric converting device of the present invention is provided with first and second pn junctions. The first pn junction is formed in a semiconductor substantially represented by (Al1−yGay)1−xInxP, and the second pn junction is formed in a semiconductor substantially represented by Ga1−zInzAs.Type: ApplicationFiled: February 9, 2001Publication date: September 6, 2001Inventors: Tadashi Hisamatsu, Kazuyo Nakamura, Yuji Komatsu, Masafumi Shimizu
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Patent number: 6184056Abstract: A process for producing a solar cell comprises the steps of; forming at least one electrode on a first surface of a semiconductor substrate for constructing a solar cell, attaching a support substrate to the first surface of the semiconductor substrate on which said electrode is formed, and then processing the semiconductor substrate into a thin-film semiconductor substrate.Type: GrantFiled: May 3, 1999Date of Patent: February 6, 2001Assignee: Sharp Kabushiki KaishaInventors: Kazuyo Nakamura, Keiji Shimada
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Patent number: 6130380Abstract: In a solar cell, a crystal defect layer by ion implantation or an amorphous layer by ion implantation is formed between p type diffusion layers provided in an island-like manner at a side opposite to a light receiving surface of a low concentration p type semiconductor single crystalline substrate. The element of the ion implantation may be at least one selected from the group consisting of hydrogen, silicon, germanium, fluorine, oxygen and carbon. The constituent substance of the semiconductor substrate, such as Si is preferably used for the ion implantation. In such a solar cell structure having the crystal defect or amorphous layer, relatively long wavelength light that could not effectively be utilized in the prior art solar cell may be utilized so that the photoelectric conversion efficiency may be improved.Type: GrantFiled: April 28, 1998Date of Patent: October 10, 2000Assignee: Sharp Kabushiki KaishaInventor: Kazuyo Nakamura
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Patent number: 6127623Abstract: A solar cell comprises a crystalline substrate having projections and depressions formed on either side or both sides of the substrate, wherein a projection-depression depth is 25 .mu.m or more.Type: GrantFiled: June 29, 1999Date of Patent: October 3, 2000Assignee: Sharp Kabushiki KaishaInventors: Kazuyo Nakamura, Kenzo Kawano, Hidetoshi Washio, Yoshifumi Tonomura, Kunio Kamimura, Hideyuki Ueyama
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Patent number: 5738732Abstract: A solar cell includes an n type diffusion layer formed on a first main surface side of a p.sup.- type monocrystalline Si substrate, and a p.sup.+ type semiconductor layer formed on a second main surface side of substrate and having an energy bandgap narrower than that of Si and a dopant impurity concentration higher than that of substrate.Type: GrantFiled: June 4, 1996Date of Patent: April 14, 1998Assignee: Sharp Kabushiki KaishaInventors: Kazuyo Nakamura, Tadashi Hisamatsu
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Patent number: 5739574Abstract: A semiconductor device which includes a mesa type silicon film with a source/drain region and a channel region formed therein, a gate oxide film formed on the mesa type silicon film, and a gate electrode provided on the mesa type silicon film through the gate oxide film, wherein an oxide film having a thickness greater than that of the gate film is formed at the top edge section of the mesa type silicon which is present under the gate electrode, as well as a method for manufacturing it.Type: GrantFiled: June 2, 1995Date of Patent: April 14, 1998Assignee: Sharp Kabushiki KaishaInventor: Kazuyo Nakamura
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Patent number: 5312774Abstract: A method for manufacturing a semiconductor device comprising forming a titanium or titanium compound film by a CVD method which uses a material gas containing an organic titanium compound of the formula (I) ##STR1## wherein R is a hydrogen atom, a lower alkyl group, a C.sub.8-13 condensed polycyclic hydrocarbonyl group or a silyl group which is substituted with a lower alkyl and/or an aryl, and a reducing gas.Type: GrantFiled: December 3, 1992Date of Patent: May 17, 1994Assignee: Sharp Kabushiki KaishaInventors: Kazuyo Nakamura, Keiichiro Uda, Osamu Yamazaki, Hiromi Hattori, Nobutaka Fukushima, Shigeo Onishi