Patents by Inventor Kazuyoshi Akiyama
Kazuyoshi Akiyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20090175654Abstract: An electrophotographic photosensitive member has a conductive substrate, a photoconductive layer formed on the conductive substrate, and a surface layer formed on the photoconductive layer. The photoconductive layer is formed of an amorphous material having chiefly silicon atoms. The surface layer has aluminum atoms, nitrogen atoms and oxygen atoms, where the nitrogen atoms are in a content of from 80 atom % or more to 95 atom % or less, and the oxygen atoms are in a content of from 1 atom % or more to 30 atom % or less, based on the aluminum atoms in the surface layer.Type: ApplicationFiled: January 6, 2009Publication date: July 9, 2009Applicant: CANON KABUSHIKI KAISHAInventors: Kazuyoshi Akiyama, Hironori Owaki
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Patent number: 7550180Abstract: In a plasma treatment method of and apparatus for treating the surface of a treatment target substrate by utilizing glow discharge produced by supplying high-frequency power into an inside-evacuated reactor through a high-frequency power supply means, a plurality of impedance regulation means for regulating impedances on the side of the reactor and on the side of the high-frequency power supply means are provided correspondingly to the impedances of a plurality of reactors, and the high-frequency power is supplied into the reactors via the impedance regulation means corresponding to the reactors. Plasma treatment can be made in a good efficiency and a low cost on a plurality of reactors having different impedances.Type: GrantFiled: March 26, 2008Date of Patent: June 23, 2009Assignee: Canon Kabushiki KaishaInventors: Toshiyasu Shirasuna, Tatsuyuki Aoike, Kazuyoshi Akiyama, Hitoshi Murayama, Takashi Otsuka, Daisuke Tazawa, Kazuto Hosoi, Yukihiro Abe
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Patent number: 7498110Abstract: There is provided an electrophotographic photosensitive member used in an electrophotographic apparatus which meets energy saving and higher image quality. The electrophotographic photosensitive member has excellent potential properties, and can suppress the image quality degradation caused by interference. The electrophotographic photosensitive member of the present invention including on a conductive substrate at least a photoconductive layer mainly composed of amorphous silicon, a surface layer, and at least one intermediate layer interposed between the photoconductive layer and the surface layer, wherein the surface layer contains a metal fluoride (exclusive of silicon fluoride) and the intermediate layer contains a metal oxide.Type: GrantFiled: June 22, 2005Date of Patent: March 3, 2009Assignee: Canon Kabushiki KaishaInventors: Takahisa Taniguchi, Kazuyoshi Akiyama
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Publication number: 20080271676Abstract: In a plasma treatment method of and apparatus for treating the surface of a treatment target substrate by utilizing glow discharge produced by supplying high-frequency power into an inside-evacuated reactor through a high-frequency power supply means, a plurality of impedance regulation means for regulating impedances on the side of the reactor and on the side of the high-frequency power supply means are provided correspondingly to the impedances of a plurality of reactors, and the high-frequency power is supplied into the reactors via the impedance regulation means corresponding to the reactors. Plasma treatment can be made in a good efficiency and a low cost on a plurality of reactors having different impedances.Type: ApplicationFiled: March 26, 2008Publication date: November 6, 2008Applicant: Canon Kabushiki KaishaInventors: Toshiyasu Shirasuna, Tatsuyuki Aoike, Kazuyoshi Akiyama, Hitoshi Murayama, Takashi Otsuka, Daisuke Tazawa, Kazuto Hosoi, Yukihiro Abe
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Patent number: 7381510Abstract: An electrophotographic photosensitive member is disclosed having a first area layer and a second area layer on a substrate. The first area layer and the second area layer are formed by deposition using different methods, and an intermediate layer is provided therebetween. The intermediate layer is changed continuously in composition in such a manner that the composition at the surface in contact with the first area layer is approximately the same as the composition of the first area layer and that the composition at the surface in contact with the second area layer is approximately the same as the composition of the second area layer, whereby the various characteristics of the electrophotographic photosensitive member is prevented from deteriorating.Type: GrantFiled: June 2, 2005Date of Patent: June 3, 2008Assignee: Canon Kabushiki KaishaInventors: Kazuyoshi Akiyama, Takahisa Taniguchi
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Patent number: 7051671Abstract: A vacuum processing method including placing an article to be processed in a reaction container and simultaneously supplying at least two high-frequency powers having different frequencies to the same high-frequency electrode to generate plasma in the reaction container by the high-frequency powers introduced into the reaction container from the high-frequency electrode. The frequencies and power values of the at least two high-frequency powers supplied satisfy a required relationship.Type: GrantFiled: June 25, 2004Date of Patent: May 30, 2006Assignee: Canon Kabushiki KaishaInventors: Makoto Aoki, Toshiyasu Shirasuna, Hiroaki Niino, Kazuyoshi Akiyama, Hitoshi Murayama, Shinji Tsuchida, Daisuke Tazawa, Yukihiro Abe
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Publication number: 20050238976Abstract: There is provided an electrophotographic photosensitive member used in an electrophotographic apparatus which meets energy saving and higher image quality. The electrophotographic photosensitive member has excellent potential properties, and can suppress the image quality degradation caused by interference. The electrophotographic photosensitive member of the present invention including on a conductive substrate at least a photoconductive layer mainly composed of amorphous silicon, a surface layer, and at least one intermediate layer interposed between the photoconductive layer and the surface layer, wherein the surface layer contains a metal fluoride (exclusive of silicon fluoride) and the intermediate layer contains a metal oxide.Type: ApplicationFiled: June 22, 2005Publication date: October 27, 2005Applicant: Canon Kabushiki KaishaInventors: Takahisa Taniguchi, Kazuyoshi Akiyama
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Publication number: 20050208399Abstract: An electrophotographic photosensitive member is disclosed having a first area layer and a second area layer on a substrate. The first area layer and the second area layer are formed by deposition using different methods, and an intermediate layer is provided therebetween. The intermediate layer is changed continuously in composition in such a manner that the composition at the surface in contact with the first area layer is approximately the same as the composition of the first area layer and that the composition at the surface in contact with the second area layer is approximately the same as the composition of the second area layer, whereby the various characteristics of the electrophotographic photosensitive member is prevented from deteriorating.Type: ApplicationFiled: June 2, 2005Publication date: September 22, 2005Applicant: CANON KABUSHIKI KAISHAInventors: Kazuyoshi Akiyama, Takahisa Taniguchi
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Patent number: 6946167Abstract: For enhancing plasma uniformity and long-term stability so as to readily form a film with excellent uniformity of thickness and quality and with good repeatability and for suppressing occurrence of image defects and drastically increasing the yield to form a deposited film ready for volume production, particularly, a functional deposit film (for example, an amorphous semiconductor used for semiconductor devices, electrophotographic photosensitive members, photovoltaic devices, and so on) is formed in an apparatus including a reaction vessel which can be hermetically evacuated, a substrate holder in the reaction vessel, a source gas supply, a power supply for high-frequency power. An end covering member is provided at an end of each of the substrate holder, the source gas supply and the power supply.Type: GrantFiled: October 24, 2003Date of Patent: September 20, 2005Assignee: Canon Kabushiki KaishaInventors: Kazuto Hosoi, Toshiyasu Shirasuna, Kazuhiko Takada, Ryuji Okamura, Kazuyoshi Akiyama, Hitoshi Murayama
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Patent number: 6861373Abstract: A vacuum processing method that includes placing an article to be processed in a reaction container and simultaneously supplying at least two high-frequency powers having mutually different frequencies to at least one high-frequency electrode to generate plasma in the reaction container by the high-frequency powers introduced into the reaction container from the high-frequency electrode(s), thereby processing the article. The frequencies and power values of the at least two high-frequency powers supplied satisfy required relationships.Type: GrantFiled: December 11, 2001Date of Patent: March 1, 2005Assignee: Canon Kabushiki KaishaInventors: Makoto Aoki, Toshiyasu Shirasuna, Hiroaki Niino, Kazuyoshi Akiyama, Hitoshi Murayama, Shinji Tsuchida, Daisuke Tazawa, Yukihiro Abe
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Publication number: 20040232415Abstract: A vacuum processing method including placing an article to be processed in a reaction container and simultaneously supplying at least two high-frequency powers having different frequencies to the same high-frequency electrode to generate plasma in the reaction container by the high-frequency powers introduced into the reaction container from the high-frequency electrode. The frequencies and power values of the at least two high-frequency powers supplied satisfy a required relationship.Type: ApplicationFiled: June 25, 2004Publication date: November 25, 2004Applicant: CANON KABUSHIKI KAISHAInventors: Makoto Aoki, Toshiyasu Shirasuna, Hiroaki Niino, Kazuyoshi Akiyama, Hitoshi Murayama, Shinji Tsuchida, Daisuke Tazawa, Yukihiro Abe
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Patent number: 6767593Abstract: A deposited film-forming apparatus comprising a reaction chamber capable of being vacuumed in which glow discharge is caused by means of a high frequency power supplied by a high frequency power introduction means to form a deposited film on a substrate positioned in said reaction chamber, wherein said high frequency power introduction means comprises an insulating material as a base constituent and has a region isolated from a glow discharge zone of said reaction chamber by means of said insulating material wherein an electrode comprising an electrically conductive metallic material having a thickness capable of sufficiently transmitting said high frequency power is disposed in said region such that it is contacted with said insulating material in a state with no clearance. A deposited film-forming process using said deposited film-forming apparatus.Type: GrantFiled: October 24, 2003Date of Patent: July 27, 2004Assignee: Canon Kabushiki KaishaInventor: Kazuyoshi Akiyama
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Patent number: 6761128Abstract: In a plasma treatment method of and apparatus for treating the surface of a treatment target substrate by utilizing glow discharge produced by supplying high-frequency power into an inside-evacuated reactor through a high-frequency power supply means, a plurality of impedance regulation means for regulating impedances on the side of the reactor and on the side of the high-frequency power supply means are provided correspondingly to the impedances of a plurality of reactors, and the high-frequency power is supplied into the reactors via the impedance regulation means corresponding to the reactors. Plasma treatment can be made in a good efficiency and a low cost on a plurality of reactors having different impedances.Type: GrantFiled: July 6, 2001Date of Patent: July 13, 2004Assignee: Canon Kabushiki KaishaInventors: Toshiyasu Shirasuna, Tatsuyuki Aoike, Kazuyoshi Akiyama, Hitoshi Murayama, Takashi Otsuka, Daisuke Tazawa, Kazuto Hosoi, Yukihiro Abe
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Publication number: 20040112864Abstract: In a plasma treatment method of and apparatus for treating the surface of a treatment target substrate by utilizing glow discharge produced by supplying high-frequency power into an inside-evacuated reactor through a high-frequency power supply means, a plurality of impedance regulation means for regulating impedances on the side of the reactor and on the side of the high-frequency power supply means are provided correspondingly to the impedances of a plurality of reactors, and the high-frequency power is supplied into the reactors via the impedance regulation means corresponding to the reactors. Plasma treatment can be made in a good efficiency and a low cost on a plurality of reactors having different impedances.Type: ApplicationFiled: December 8, 2003Publication date: June 17, 2004Applicant: CANON KABUSHIKI KAISHAInventors: Toshiyasu Shirasuna, Tatsuyuki Aoike, Kazuyoshi Akiyama, Hitoshi Murayama, Takashi Otsuka, Daisuke Tazawa, Kazuto Hosoi, Yukihiro Abe
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Publication number: 20040083974Abstract: For enhancing plasma uniformity and long-term stability so as to readily form a film with excellent uniformity of thickness and quality and with good repeatability and for suppressing occurrence of image defects and drastically increasing the yield to form a deposited film ready for volume production, particularly, a functional deposit film (for example, an amorphous semiconductor used for semiconductor devices, electrophotographic photosensitive members, photovoltaic devices, and so on) is formed in an apparatus including a reaction vessel which can be hermetically evacuated, a substrate holder in the reaction vessel, a source gas supply, a power supply for high-frequency power. An end covering member is provided at an end of each of the substrate holder, the source gas supply and the power supply.Type: ApplicationFiled: October 24, 2003Publication date: May 6, 2004Inventors: Kazuto Hosoi, Toshiyasu Shirasuna, Kazuhiko Takada, Ryuji Okamura, Kazuyoshi Akiyama, Hitoshi Murayama
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Publication number: 20040079288Abstract: A deposited film-forming apparatus comprising a reaction chamber capable of being vacuumed in which glow discharge is caused by means of a high frequency power supplied by a high frequency power introduction means to form a deposited film on a substrate positioned in said reaction chamber, wherein said high frequency power introduction means comprises an insulating material as a base constituent and has a region isolated from a glow discharge zone of said reaction chamber by means of said insulating material wherein an electrode comprising an electrically conductive metallic material having a thickness capable of sufficiently transmitting said high frequency power is disposed in said region such that it is contacted with said insulating material in a state with no clearance. A deposited film-forming process using said deposited film-forming apparatus.Type: ApplicationFiled: October 24, 2003Publication date: April 29, 2004Inventor: Kazuyoshi Akiyama
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Patent number: 6712019Abstract: A deposited film-forming apparatus comprising a reaction chamber capable of being vacuumed in which glow discharge is caused by means of a high frequency power supplied by a high frequency power introduction means to form a deposited film on a substrate positioned in said reaction chamber, wherein said high frequency power introduction means comprises an insulating material as a base constituent and has a region isolated from a glow discharge zone of said reaction chamber by means of said insulating material wherein an electrode comprising an electrically conductive metallic material having a thickness capable of sufficiently transmitting said high frequency power is disposed in said region such that it is contacted with said insulating material in a state with no clearance. A deposited film-forming process using said deposited film-forming apparatus.Type: GrantFiled: February 10, 1997Date of Patent: March 30, 2004Assignee: Canon Kabushiki KaishaInventor: Kazuyoshi Akiyama
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Patent number: 6702898Abstract: For enhancing plasma uniformity and long-term stability so as to readily form a film with excellent uniformity of thickness and quality and with good repeatability and for suppressing occurrence of image defects and drastically increasing the yield to form a deposited film ready for volume production, particularly, a functional deposit film (for example, an amorphous semiconductor used for semiconductor devices, electrophotographic photosensitive members, photovoltaic devices, and so on) is formed in an apparatus including a reaction vessel which can be hermetically evacuated, a substrate holder in the reaction vessel, a source gas supply, a power supply for high-frequency power. An end covering member is provided at an end of each of the substrate holder, the source gas supply and the power supply.Type: GrantFiled: January 16, 2002Date of Patent: March 9, 2004Assignee: Canon Kabushiki KaishaInventors: Kazuto Hosoi, Toshiyasu Shirasuna, Kazuhiko Takada, Ryuji Okamura, Kazuyoshi Akiyama, Hitoshi Murayama
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Patent number: 6649020Abstract: A plasma processing method comprising the steps of arranging a substrate on a film is to be formed in a reaction chamber capable of being vacuumed and evacuating the inside of the reaction chamber in a loading stage; and separating the reaction chamber from the loading stage and joining the reaction chamber to a treating stage where the substrate arranged in the reaction chamber is subjected to plasma processing, wherein the reaction chamber is moved on a track to join to the treating stage, where a high frequency power supply system, a processing gas supply system and an exhaustion system are joined to the reaction chamber, whereby plasma is produced in the reaction chamber to conduct plasma processing on the substrate. An apparatus suitable for practicing said plasma processing method.Type: GrantFiled: July 5, 2001Date of Patent: November 18, 2003Assignee: Canon Kabushiki KaishaInventors: Ryuji Okamura, Tatsuyuki Aoike, Toshiyasu Shirasuna, Kazuhiko Takada, Kazuyoshi Akiyama, Hitoshi Murayama
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Publication number: 20030049558Abstract: A vacuum processing method including placing an article to be processed in a reaction container and simultaneously supplying at least two high-frequency powers having different frequencies to the same high-frequency electrode to generate plasma in the reaction container by the high-frequency powers introduced into the reaction container from the high-frequency electrode. The frequencies and power values of the at least two high-frequency powers supplied satisfy the required relationship. Also, disclosed are a semiconductor device manufacturing method, a semiconductor device and a vacuum processing apparatus.Type: ApplicationFiled: December 11, 2001Publication date: March 13, 2003Inventors: Makoto Aoki, Toshiyasu Shirasuna, Hiroaki Niino, Kazuyoshi Akiyama, Hitoshi Murayama, Shinji Tsuchida, Daisuke Tazawa, Yukihiro Abe