Patents by Inventor Kazuyoshi Hasegawa

Kazuyoshi Hasegawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11938565
    Abstract: The laser welding device includes a laser transmission window and a gas injection nozzle. The gas injection nozzle includes an optical path hole and an injection unit that injects an inert gas for shielding metal vapor into the optical path hole toward an irradiation direction side and an optical axis side of a laser beam.
    Type: Grant
    Filed: December 4, 2019
    Date of Patent: March 26, 2024
    Assignee: AISIN FUKUI CORPORATION
    Inventors: Kouji Takemoto, Kazuyoshi Miyamoto, Tomoaki Yoshida, Daichi Sumimori, Hiroshi Hasegawa
  • Patent number: 6137121
    Abstract: An optical semiconductor device used for optical information processing, such as writing information into and reading information from an optical disk. The optical semiconductor device includes a Si substrate, a light emitting element, and a reflector for reflecting light emitted from the light emitting element in a direction perpendicular to the mounting surface of the Si substrate. The reflector has a reflecting surface inclined by 45.degree. from a bottom face and formed by etching a single crystal of Si.
    Type: Grant
    Filed: June 26, 1998
    Date of Patent: October 24, 2000
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Yousuke Yamamoto, Yoshikazu Tanaka, Seiichi Nagai, Mitsuo Ishii, Isao Oshima, Kazuyoshi Hasegawa
  • Patent number: 5105237
    Abstract: A semiconductor light-emitting device which provides optically undistorted light includes a semiconductor light-emitting element and at least one optical element. The light emitting-element and the optical element are held in a resin which is transparent to light emitted from the light-emitting element so that light emitted from the light-emitting element travels to the optical element along an optical path entirely within the resin, but the light exits a portion of the optical element located outside of the resin.
    Type: Grant
    Filed: July 3, 1991
    Date of Patent: April 14, 1992
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Kazuyoshi Hasegawa, Masayuki Kubota, Mitsuo Ishii, Seiichi Nagai
  • Patent number: 5022035
    Abstract: A semiconductor laser device includes a heat sink having a plurality of element mounting portions, each having an element mounting surface and an insulator separating the element mounting portions from each other. A semiconductor laser element is arranged on each element mounting surface and a corresponding light receiving element for each laser element is disposed for monitoring the emitted laser light. External control circuits for adjusting the laser outputs of the respective laser elements are located outside the laser device package.
    Type: Grant
    Filed: February 13, 1990
    Date of Patent: June 4, 1991
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventor: Kazuyoshi Hasegawa
  • Patent number: 4995687
    Abstract: A semiconductor laser device and method of producing the same in which a laser diode chip is mounted on a stem via a heat sink. The cap is fixed to the stem covering the chip and includes a penetrating aperture, a lens for collimating light from the chip into penetrating aperture, and an optical fiber for guiding the collimated light which is fixed to the penetrating aperture after insertion to a desired depth.
    Type: Grant
    Filed: October 23, 1989
    Date of Patent: February 26, 1991
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Seiichi Nagai, Mitsuo Ishii, Kazuyoshi Hasegawa
  • Patent number: 4947238
    Abstract: A submount for a semiconductor laser element includes a substrate and a barrier layer disposed on opposed surfaces of the substrate and including a plurality of layers wherein the outermost layer of the barrier layers is Au and Ag. A metal alloy solder layer comprising Sn, Ag, and Sb is deposited on the barrier layers.
    Type: Grant
    Filed: May 1, 1989
    Date of Patent: August 7, 1990
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Mitsuo Ishii, Seiichi Nagai, Kazuyoshi Hasegawa, Toshio Tanaka