Abstract: A method for correcting a mask pattern to be formed on a photomask used in a lithographic step of a semiconductor device fabrication process. The method includes the steps of extracting an isolated pattern having an optically isolated portion from the mask pattern and providing, in an adjacent pattern extending parallel to the isolated portion of the isolated pattern and having a terminal end, an extended portion extending from the terminal end next to the isolated portion of the isolated pattern along a direction in which the isolated portion of the isolated pattern extends.

Abstract: A method is provided for correcting a mask pattern to be formed on a photomask used in a lithographic step of a semiconductor device fabrication process. The method includes the steps of extracting an isolated pattern having an optically isolated portion from the mask pattern and providing, in an adjacent pattern extending parallel to the isolated portion of the isolated pattern and having a terminal end, an extended portion extending from the terminal end next to the isolated portion of the isolated pattern along a direction in which the isolated portion of the isolated pattern extends.

Abstract: A method for correcting a mask pattern to be formed on a photomask used in a lithographic step of a semiconductor device fabrication process. The method includes the steps of extracting an isolated pattern having an optically isolated portion from the mask pattern and providing, in an adjacent pattern extending parallel to the isolated portion of the isolated pattern and having a terminal end, an extended portion extending from the terminal end next to the isolated portion of the isolated pattern along a direction in which the isolated portion of the isolated pattern extends.

Abstract: A method of forming an exposure mask pattern providing edge division points P at edges of a design pattern (1) by predetermined intervals and correcting edge positions for each divided edge portion, wherein, for the design pattern (1), rectangular patterns (10) and (11) are formed having pairs of facing long sides and facing short sides in the design pattern (1). The rectangular patterns (10) and (11) are formed at portions having widths W1a and W2a of the long sides in the design pattern (1) within a predetermined interval W0, so that W1a?W0 and W2a?W0. Next, at each of the rectangular patterns (10) and (11), new edge division points P (P1) are given along each of the facing long sides at predetermined intervals t from start points P0 sharing a short side. Due to this, the exposure mask pattern used for lithography can be simplified and the precision of formation of a transfer pattern can be improved.

Abstract: Provided is more effective a cell activator. A cell activator comprising a glycosphingolipid having a structure represented by the following formula (1): formula (1) wherein R1 represents the following formula (1-1): formula (1-1) wherein R3 represents alkyl or alkenyl and R4 represents alkyl; and R2 represents hydrogen, or ?-galactose, ?-glucose, ?-mannose, ?-glucosamine, ?-glucosamine or a combination thereof.

Abstract: By correcting an optical proximity effect with respect to design patterns by an optical proximity effect correcting means and simulating patterns after the correction of optical proximity effect by a simulation means, transfer patterns of gate electrodes are generated and measurement portion in the transfer patterns of the gate electrodes are changed in accordance with characteristics required for a circuit. Then, in accordance with whether the point required from the circuit is a higher speed, stability, or a reduction of a leakage current, it is judged whether or not a deviation from the design value at the measurement point of the transfer pattern of the gate electrode as explained above is within an allowable range. The pattern of the measurement point is shifted when the deviation is not within the allowable range.

Abstract: A method is provided for correcting a mask pattern to be formed on a photomask used in a lithographic step of a semiconductor device fabrication process. The method includes the steps of extracting an isolated pattern having an optically isolated portion from the mask pattern and providing, in an adjacent pattern extending parallel to the isolated portion of the isolated pattern and having a terminal end, an extended portion extending from the terminal end next to the isolated portion of the isolated pattern along a direction in which the isolated portion of the isolated pattern extends.

Abstract: A method of forming an exposure mask pattern providing edge division points P at edges of a design pattern 1 by predetermined intervals and correcting edge positions for each divided edge portion, wherein, for the design pattern 1, rectangular patterns 10 and 11 are formed having as long sides a pair of facing sides forming the design pattern 1. At that time, the rectangular patterns 10 and 11 are formed at portions having intervals W1 and W2 of the long sides in the design pattern 1 within a predetermined interval W0. Next, at each of the rectangular patterns 10 and 11, new edge division points P (P1) are given at the long sides at predetermined intervals t from the start points P0 using as the start points P0 two vertexes sharing a short side. Due to this, the exposure mask pattern used for lithography can be simplified and the precision of formation of a transfer pattern can be improved.

Abstract: A glycosphingolipid having a sugar chain containing &agr;-glucosamine and &bgr;-glucosamine is disclosed. Such glycosphingolipid is advantageous in that possibly being manufactured in a facile and inexpensive manner, and that exhibiting moisturizing effect and immuno-enhancing activity.

Abstract: By correcting an optical proximity effect with respect to design patterns by an optical proximity effect correcting means and simulating patterns after the correction of optical proximity effect by a simulation means, transfer patterns of gate electrodes are generated and measurement portion in the transfer patterns of the gate electrodes are changed in accordance with characteristics required for a circuit. Then, in accordance with whether the point required from the circuit is a higher speed, stability, or a reduction of a leakage current, it is judged whether or not a deviation from the design value at the measurement point of the transfer pattern of the gate electrode as explained above is within an allowable range. The pattern of the measurement point is shifted when the deviation is not within the allowable range.

Abstract: A glycosphingolipid having a sugar chain containing &agr;-glucosamine and &bgr;-glucosamine is disclosed. Such glycosphingolipid is advantageous in that possibly being manufactured in a facile and inexpensive manner, and that exhibiting moisturizing effect and immuno-enhancing activity.

Abstract: Glycosphingolipid compounds represented by the following formula ##STR1## wherein R is ##STR2## possess B cell mitogen activity and can be used as B cell activators.