Abstract: A learning device for performing a machine learning based on a learning model using data input to an input layer, includes: a calculation part configured to calculate a predetermined number of features, in which simulation data as a result of simulating semiconductor manufacturing processes by setting environmental information inside a process vessel in which the semiconductor manufacturing processes are performed and using a predetermined component provided in the process vessel as a variable, and XY coordinates parallel to a plane of a wafer are associated with each other; and an input part configured to input the calculated predetermined number of features to the input layer.

Abstract: A learning device for performing a machine learning based on a learning model using data input to an input layer, includes: a calculation part configured to calculate a predetermined number of features, in which simulation data as a result of simulating semiconductor manufacturing processes by setting environmental information inside a process vessel in which the semiconductor manufacturing processes are performed and using a predetermined component provided in the process vessel as a variable, and XY coordinates parallel to a plane of a wafer are associated with each other; and an input part configured to input the calculated predetermined number of features to the input layer.

Abstract: A method of manufacturing a semiconductor device having a metal oxide film with workpiece accommodated in a chamber, includes: supplying a precursor gas containing a metal complex into the chamber to form a precursor layer on the workpiece from the precursor gas; supplying an oxidizing gas into the chamber to oxidize the precursor layer so that a metal oxide layer is formed, the oxidizing gas being a gas containing H2O or a gas having a functional group containing hydrogen atoms in the metal complex and containing an oxidant to generate H2O by reaction with the functional group; supplying an H2O removal gas containing alcohols or amines into the chamber to remove H2O adsorbed onto the metal oxide layer; and executing a plurality of cycles each including the supplying a precursor gas and the supplying an oxidizing gas. At least some of the cycles includes the supplying an H2O removal gas.

Abstract: A film forming apparatus includes a gas injection unit having a shower plate provided with gas injection holes, and a plurality of partition regions through which gases are separately injected and which are defined by dividing an arrangement region of the gas injection holes into a plurality of concentric regions in a diametrical direction of the substrate. A supply amount of a raw material gas per unit time in a raw material gas supply period in a cycle of forming a monomolecular layer by supplying the raw material gas and a reactant gas multiple times, and per unit area of the shower plate, and/or a supply amount of the reactant gas per unit time in a reaction period of the raw material gas and the reactant gas in the cycle, and per unit area of the shower plate becomes different in at least two of the partition regions.

Abstract: A temperature control method is performed by a temperature control apparatus including a heat exchanger configured to exchange heat using a phase change of a refrigerant, a rotary pump configured to receive the refrigerant from the heat exchanger and fuse the refrigerant with oil contained inside the rotary pump, and an oil refrigerant separator configured to receive the refrigerant fused with the oil from the rotary pump and separate the refrigerant from the oil. The temperature control method includes the steps of: circulating the refrigerant separated from the oil back to the heat exchanger; and adjusting at least one of a rotation speed of a rotor of the rotary pump, a position of a valve arranged at a connecting portion of the rotary pump and the heat exchanger, and a position of an airflow adjustment valve arranged at a connecting portion of the oil refrigerant separator and the heat exchanger.

Abstract: A temperature adjustment method comprising: forming a wet surface wet with a cooling medium by supplying the cooling medium to a rear surface of a temperature adjustment surface of a component member in a processing chamber of a substrate processing device comprising the processing chamber which performs predetermined processing on a substrate and is vacuum-exhaustible; and adjusting a temperature of the temperature adjustment surface due to latent heat of evaporation of the cooling medium by evaporating the cooling medium which forms the wet surface by adjusting a pressure in an evaporation chamber which isolates the wet surface from an atmosphere around the wet surface.

Abstract: A method of manufacturing a semiconductor device having a metal oxide film with workpiece accommodated in a chamber, includes: supplying a precursor gas containing a metal complex into the chamber to form a precursor layer on the workpiece from the precursor gas; supplying an oxidizing gas into the chamber to oxidize the precursor layer so that a metal oxide layer is formed, the oxidizing gas being a gas containing H2O or a gas having a functional group containing hydrogen atoms in the metal complex and containing an oxidant to generate H2O by reaction with the functional group; supplying an H2O removal gas containing alcohols or amines into the chamber to remove H2O adsorbed onto the metal oxide layer; and executing a plurality of cycles each including the supplying a precursor gas and the supplying an oxidizing gas. At least some of the cycles includes the supplying an H2O removal gas.

Abstract: In a substrate processing apparatus, a mounting table and a gas supply part are provided in a processing container to face each other. The processing gas introduced from introduction ports formed in the gas supply part on the opposite side of the gas supply part from the mounting table is supplied to the substrate from gas supply holes formed in an end portion of the gas supply part on the side of the mounting table. The gas supply part includes a central region and one or more outer peripheral regions surrounding the central region. The gas supply holes and the introduction ports are provided for each of the central region and the outer peripheral regions. The processing gas whose gas supply conditions are adjusted for each of the regions is continuously and outwardly supplied in a circumferential direction around the center axis from the introduction ports.

Abstract: In a substrate processing apparatus, a mounting table and a gas supply part are provided in a processing container to face each other. The processing gas introduced from introduction ports formed in the gas supply part on the opposite side of the gas supply part from the mounting table is supplied to the substrate from gas supply holes formed in an end portion of the gas supply part on the side of the mounting table. The gas supply part includes a central region and one or more outer peripheral regions surrounding the central region. The gas supply holes and the introduction ports are provided for each of the central region and the outer peripheral regions. The processing gas whose gas supply conditions are adjusted for each of the regions is continuously and outwardly supplied in a circumferential direction around the center axis from the introduction ports.

Abstract: A film forming apparatus includes a gas injection unit having a shower plate provided with gas injection holes, and a plurality of partition regions through which gases are separately injected and which are defined by dividing an arrangement region of the gas injection holes into a plurality of concentric regions in a diametrical direction of the substrate. A supply amount of a raw material gas per unit time in a raw material gas supply period in a cycle of forming a monomolecular layer by supplying the raw material gas and a reactant gas multiple times, and per unit area of the shower plate, and/or a supply amount of the reactant gas per unit time in a reaction period of the raw material gas and the reactant gas in the cycle, and per unit area of the shower plate becomes different in at least two of the partition regions.

Abstract: A gas supply and exhaust structure, for supplying and exhausting a raw material gas into and from a chamber having a substrate mounting surface at a position corresponding to a central portion of an inner top surface, includes a side gas supply unit having gas supply ports arranged circumferentially and vertically on an inner side surface of the chamber and configured to supply the raw material gas through the gas supply ports toward a central axis of the chamber, and an exhaust unit having a gas exhaust port formed at the central portion of the inner top surface of the chamber and configured to exhaust the raw material gas. The inner top surface has an inclined surface inclined such that a distance between the inner top surface and an inner bottom surface of the chamber becomes smaller from the inner side surface toward the central axis.

Abstract: A temperature control method is performed by a temperature control apparatus including a heat exchanger configured to exchange heat using a phase change of a refrigerant, a rotary pump configured to receive the refrigerant from the heat exchanger and fuse the refrigerant with oil contained inside the rotary pump, and an oil refrigerant separator configured to receive the refrigerant fused with the oil from the rotary pump and separate the refrigerant from the oil. The temperature control method includes the steps of: circulating the refrigerant separated from the oil back to the heat exchanger; and adjusting at least one of a rotation speed of a rotor of the rotary pump, a position of a valve arranged at a connecting portion of the rotary pump and the heat exchanger, and a position of an airflow adjustment valve arranged at a connecting portion of the oil refrigerant separator and the heat exchanger.

Abstract: Provided is a substrate processing apparatus including: a chamber in which plasma processing is performed on a substrate; a susceptor disposed in the chamber and on which the substrate is held; a shower head provided to face the susceptor with a processing space therebetween; a high frequency power source which generates plasma by applying high frequency power to the processing space; water spray devices which form a surface wet with water on a rear surface of a surface of the susceptor as a temperature adjustment surface; an evaporation chamber which isolates the wet surface from an atmosphere around the wet surface; and a pressure adjustment device which adjusts a pressure in the evaporation chamber, wherein the pressure in the evaporation chamber is adjusted by using the pressure adjustment device such that the water which forms the wet surface is evaporated, thereby controlling a temperature of the surface of the susceptor by using latent heat of evaporation of the water.

Abstract: A temperature control apparatus (70) includes a heat exchanger (71) configured to exchange heat with the surroundings using a phase change of a refrigerant, a rotary pump (73) configured to receive the refrigerant from the heat exchanger (71) and fuse the refrigerant with oil contained inside the rotary pump, and an oil water separator (74) configured to receive the refrigerant fused with the oil from the rotary pump (73) and separate the refrigerant from the oil. The temperature control apparatus further includes a refrigeration cycle that implements a cooling function by circulating the refrigerant separated from the oil back to the heat exchanger (71).

Abstract: A plasma processing apparatus includes a first electrode and a second electrode so arranged in the upper portion of a processing chamber as to face a mounting table, a gas supply unit for supplying a processing gas between the first electrode and the second electrode, a RF power supply unit for applying a RF power between the first electrode and the second electrode for converting the process gas supplied between the electrodes into a plasma, and a gas exhaust unit for evacuating the inside of the processing chamber to a vacuum level from the lower portion of the processing chamber. Since the electron temperature in the plasma is low near a substrate on the mounting table, damage to the substrate caused by the plasma can be suppressed. In addition, since a metal can be used as a material for the processing chamber, the processing chamber can have good temperature controllability.

Abstract: A conveyance device, which conveys wafers in a casing 30, includes a primary blowing fan 17 that generates airflow within the casing 30 in a first direction; a discharge opening 26 that is located at a downstream side of the airflow generated by the primary blowing fan 17, is interconnected with the interior of the casing 30, and discharges gases at the interior of the casing 30 outside of the casing 30; a base 18d that is supported by a gate-shaped conveyance arm 22 disposed within the casing 30 and moves within the casing 30 at the upstream side of the discharge opening 26 and at the downstream side of the primary blowing fan 17; an end effector 21 that is located at the base 18d and that carries wafers; and a blowing fan 19 that is located at the base and that generates airflow in the first direction.

Abstract: A conveyance device, which conveys wafers in a casing 30, includes a primary blowing fan 17 that generates airflow within the casing 30 in a first direction; a discharge opening 26 that is located at a downstream side of the airflow generated by the primary blowing fan 17, is interconnected with the interior of the casing 30, and discharges gases at the interior of the casing 30 outside of the casing 30; a base 18d that is supported by a gate-shaped conveyance arm 22 disposed within the casing 30 and moves within the casing 30 at the upstream side of the discharge opening 26 and at the downstream side of the primary blowing fan 17; an end effector 21 that is located at the base 18d and that carries wafers; and a blowing fan 19 that is located at the base and that generates airflow in the first direction.

Abstract: A temperature control apparatus (70) includes a heat exchanger (71) configured to exchange heat with the surroundings using a phase change of a refrigerant, a rotary pump (73) configured to receive the refrigerant from the heat exchanger (71) and fuse the refrigerant with oil contained inside the rotary pump, and an oil water separator (74) configured to receive the refrigerant fused with the oil from the rotary pump (73) and separate the refrigerant from the oil. The temperature control apparatus further includes a refrigeration cycle that implements a cooling function by circulating the refrigerant separated from the oil back to the heat exchanger (71).

Abstract: A semiconductor fabrication apparatus includes a semiconductor wafer mounting table having a cavity therein; and a nozzle which jets a liquefied temperature adjustment medium having a temperature equal to or less than a targeted temperature to an inner wall of the cavity in order to adjust a temperature of the semiconductor wafer mounting table to the targeted temperature. The semiconductor fabrication apparatus further includes a pressure detecting unit for detecting an internal pressure of the cavity; and a vacuum pump which discharges gas within the cavity such that a pressure detected by the pressure detecting unit becomes equal to or more than a saturated vapor pressure related to the temperature of the temperature adjustment medium jetted from the nozzle and equal to or less than a saturated vapor pressure related to the targeted temperature.

Abstract: A plasma processing apparatus includes a first electrode and a second electrode so arranged in the upper portion of a processing chamber as to face a mounting table, a gas supply unit for supplying a processing gas between the first electrode and the second electrode, a RF power supply unit for applying a RF power between the first electrode and the second electrode for converting the process gas supplied between the electrodes into a plasma, and a gas exhaust unit for evacuating the inside of the processing chamber to a vacuum level from the lower portion of the processing chamber. Since the electron temperature in the plasma is low near a substrate on the mounting table, damage to the substrate caused by the plasma can be suppressed. In addition, since a metal can be used as a material for the processing chamber, the processing chamber can have good temperature controllability.