Patents by Inventor Kazuyoshi Mizumoto
Kazuyoshi Mizumoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220213382Abstract: A substrate processing method includes holding a substrate; and supplying an etching liquid to the substrate held in the holding of the substrate. The etching liquid contains an etching agent configured to etch a metal-based first material and a silicon-based second material exposed on the substrate and a protection agent configured to react with the second material between the first material and the second material to form a protection layer on a surface of the second material. Here, the etching agent is a liquid which contains fluorine atoms and an organic solvent and substantially does not contain water, and the protection layer protects the second material from etching with the etching agent.Type: ApplicationFiled: March 14, 2022Publication date: July 7, 2022Inventors: Koukichi Hiroshiro, Tetsuya Sakazaki, Koji Kagawa, Kenji Sekiguchi, Kazuyoshi Mizumoto
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Patent number: 11306249Abstract: A substrate processing method includes holding a substrate; and supplying an etching liquid to the substrate held in the holding of the substrate. The etching liquid contains an etching agent configured to etch a metal-based first material and a silicon-based second material exposed on the substrate and a protection agent configured to react with the second material between the first material and the second material to form a protection layer on a surface of the second material. Here, the etching agent is a liquid which contains fluorine atoms and an organic solvent and substantially does not contain water, and the protection layer protects the second material from etching with the etching agent.Type: GrantFiled: January 23, 2019Date of Patent: April 19, 2022Assignee: TOKYO ELECTRON LIMITEDInventors: Koukichi Hiroshiro, Tetsuya Sakazaki, Koji Kagawa, Kenji Sekiguchi, Kazuyoshi Mizumoto
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Publication number: 20210384049Abstract: A wet etch system comprises an etching bath comprising an etching solution in a process tank inside an overflow tank flowing over an open top into the overflow tank. The etching bath has a top cover, a gas inlet, and a gas outlet above the etching solution. A gas flow system pumps inert gas into the gas inlet and extracts the gas through the gas outlet under positive pressure. The gas flow system may also bubble inert gas through the etching solution via injectors of a gas sparger in the process tank. A recirculation path connects a liquid outlet port coupled to the overflow tank to a liquid inlet port coupled to the process tank. A pump drives the etching solution to flow from the overflow tank, through a degasser in the recirculation path, back into the process tank, and overflow from the process tank into the overflow tank.Type: ApplicationFiled: November 3, 2020Publication date: December 9, 2021Inventors: Derek William Bassett, Antonio Luis Pacheco Rotondaro, Trace Quentin Hurd, Hironobu Hyakutake, Kazuyoshi Mizumoto, Nobuaki Matsumoto
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Publication number: 20210032537Abstract: A substrate processing method includes holding a substrate; and supplying an etching liquid to the substrate held in the holding of the substrate. The etching liquid contains an etching agent configured to etch a metal-based first material and a silicon-based second material exposed on the substrate and a protection agent configured to react with the second material between the first material and the second material to form a protection layer on a surface of the second material. Here, the etching agent is a liquid which contains fluorine atoms and an organic solvent and substantially does not contain water, and the protection layer protects the second material from etching with the etching agent.Type: ApplicationFiled: January 23, 2019Publication date: February 4, 2021Inventors: Koukichi Hiroshiro, Tetsuya Sakazaki, Koji Kagawa, Kenji Sekiguchi, Kazuyoshi Mizumoto
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Patent number: 10067514Abstract: A substrate processing apparatus includes a mixing tank, a first opening/closing valve, a second opening/closing valve, a first flow rate measuring unit, a second flow rate measuring unit, a control unit, and a substrate processing unit. A first liquid and a second liquid are mixed such that the second liquid is mixed in an amount more than that of the first liquid. The first and second opening/closing valves open/close a first flow path and a second flow path, respectively. The first and second flow rate measuring units measure flow rates of the first and second liquids flowing through the first and second flow paths, respectively. The control unit controls opening/closing of the first opening/closing valve and the second opening/closing valve. The substrate processing unit processes a substrate by supplying a mixed liquid of the first and second liquids to the substrate.Type: GrantFiled: November 18, 2014Date of Patent: September 4, 2018Assignee: Tokyo Electron LimitedInventors: Yasuo Kiyohara, Ikuo Sunaka, Koji Tanaka, Takami Satoh, Kazuyoshi Mizumoto, Takashi Uno, Hirotaka Maruyama, Hidetomo Uemukai, Tomiyasu Maezono
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Publication number: 20150146498Abstract: A substrate processing apparatus includes a mixing tank, a first opening/closing valve, a second opening/closing valve, a first flow rate measuring unit, a second flow rate measuring unit, a control unit, and a substrate processing unit. A first liquid and a second liquid are mixed such that the second liquid is mixed in an amount more than that of the first liquid. The first and second opening/closing valves open/close a first flow path and a second flow path, respectively. The first and second flow rate measuring units measure flow rates of the first and second liquids flowing through the first and second flow paths, respectively. The control unit controls opening/closing of the first opening/closing valve and the second opening/closing valve. The substrate processing unit processes a substrate by supplying a mixed liquid of the first and second liquids to the substrate.Type: ApplicationFiled: November 18, 2014Publication date: May 28, 2015Inventors: Yasuo Kiyohara, Ikuo Sunaka, Koji Tanaka, Takami Satoh, Kazuyoshi Mizumoto, Takashi Uno, Hirotaka Maruyama, Hidetomo Uemukai, Tomiyasu Maezono
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Patent number: 6573031Abstract: A substrate coated with a coating solution is placed on a heating plate in a processing chamber in which an inert gas is circulating. The substrate is heated on the heating plate while the inert gas is circulating at an extremely small first circulating amount. The substrate is heated further on the heating plate while the inert gas is circulating at a second circulating amount larger than the first circulating amount. Detected is the density of the solvent in the processing chamber. The supply and exhaust amounts of the inert gas are controlled based on the density detected after the start of heating, so that an exhaust amount of the inert gas becomes a predetermined amount for a predetermined period until the solvent density reaches a predetermined density. A necessary control process is performed so that the solvent density reaches the predetermined density when the solvent density has not reached or exceeded the predetermined density after the predetermined period has elapsed.Type: GrantFiled: December 18, 2001Date of Patent: June 3, 2003Assignee: Tokyo Electron LimitedInventors: Hiroshi Shinya, Kazuyoshi Mizumoto, Kazuhisa Hayashida, Eiichi Sekimoto
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Publication number: 20020076659Abstract: A substrate coated with a coating solution is placed on a heating plate in a processing chamber in which an inert gas is circulating. The substrate is heated on the heating plate while the inert gas is circulating at an extremely small first circulating amount. The substrate is heated further on the heating plate while the inert gas is circulating at a second circulating amount larger than the first circulating amount. Detected is the density of the solvent in the processing chamber. The supply and exhaust amounts of the inert gas are controlled based on the density detected after the start of heating, so that an exhaust amount of the inert gas becomes a predetermined amount for a predetermined period until the solvent density reaches a predetermined density. A necessary control process is performed so that the solvent density reaches the predetermined density when the solvent density has not reached or exceeded the predetermined density after the predetermined period has elapsed.Type: ApplicationFiled: December 18, 2001Publication date: June 20, 2002Applicant: TOKYO ELECTRON LIMITEDInventors: Hiroshi Shinya, Kazuyoshi Mizumoto, Kazuhisa Hayashida, Eiichi Sekimoto
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Patent number: 5435075Abstract: A spindrier comprises a box enclosing a plurality of wafers, a motor for rotating the wafers in the box, upper and lower clamp bars for holding the wafers face to face and substantially perpendicular to a rotating shaft of rotating means, and gas introducing and discharging mechanisms for generating a flow of clean gas in the box. A sectional area of an open bottom of the box is smaller than a sectional area of an open top of the box, and the gas flows from the open top to the open bottom.Type: GrantFiled: April 7, 1993Date of Patent: July 25, 1995Assignees: Tokyo Electron Limited, Tokyo Electron Kyushu LimitedInventors: Hirofumi Shiraishi, Kenji Yokomizo, Kazuyoshi Mizumoto, Yoshiyuki Honda