Abstract: A construction of integrated circuitry comprises a structure comprising conductive material having insulative material there-above. The conductive material and the insulative material respectively have opposing sides in a vertical cross-section. A first insulating material is laterally outward of the opposing sides of the conductive material in the vertical cross-section. A second insulating material is laterally outward of the first insulating material in the vertical cross-section. The second insulating material is of different composition from that of the first insulating material. The second insulating material laterally covers a lower portion of the opposing sides of the insulative material in the vertical cross-section. The second insulating material does not laterally cover an upper portion of the opposing sides of the insulative material in the vertical cross-section. A third insulating material is laterally outward of the second insulating material in the vertical cross-section.

Abstract: A construction of integrated circuitry comprises a structure comprising conductive material having insulative material there-above. The conductive material and the insulative material respectively have opposing sides in a vertical cross-section. A first insulating material is laterally outward of the opposing sides of the conductive material in the vertical cross-section. A second insulating material is laterally outward of the first insulating material in the vertical cross-section. The second insulating material is of different composition from that of the first insulating material. The second insulating material laterally covers a lower portion of the opposing sides of the insulative material in the vertical cross-section. The second insulating material does not laterally cover an upper portion of the opposing sides of the insulative material in the vertical cross-section. A third insulating material is laterally outward of the second insulating material in the vertical cross-section.

Abstract: A semiconductor device comprising: a silicon substrate; an embedded gate electrode groove provided in the silicon substrate; a gate insulating film provided on the wall inside the embedded gate electrode groove; an embedded gate electrode provided on the gate insulating film so as to be installed inside the embedded gate electrode groove, the embedded gate electrode, having a first portion having a titanium nitride film and a first metal film thereon, and a second portion having a single-layer titanium nitride film; and a contact plug electrically connected to the first metal film constituting the first portion of the embedded gate electrode.

Abstract: A semiconductor memory device including: word lines extending in a Y direction on a semiconductor substrate, the word lines being arranged in an X direction perpendicular to the Y direction and being parallel to one another; active regions each elongating and intersecting with two of the word lines, the active regions being arranged in the Y direction and being parallel to one another on the semiconductor substrate; a capacitance contact plug connected to each end of each of the active regions in the longitudinal direction thereof; a stack lower electrode including a first lower electrode formed on the capacitance contact plug and a second lower electrode formed on the first lower electrode; a capacitance insulating film; and an upper electrode, wherein the center position of the second lower electrode is shifted in a predetermined direction from the center position of the first lower electrode.

Abstract: A semiconductor device includes a semiconductor substrate, source and drain regions on the semiconductor substrate, and contact plugs connected to the source and drain regions. The contact plugs includes first impurity-diffused epitaxial layers that contact with the source and drain regions.

Abstract: A semiconductor device includes a semiconductor substrate, source and drain regions on the semiconductor substrate, and contact plugs connected to the source and drain regions. The contact plugs includes first impurity-diffused epitaxial layers that contact with the source and drain regions.