Abstract: Provided are an infrared LED element with an emission wavelength of 1000 nm or more, which has improved emission efficiency by enhancing uniformity of light emission in a surface direction. The infrared LED element includes: a support substrate; a reflection layer formed on top of the support substrate; an insulating layer formed on top of the reflection layer; a contact layer formed on top of the insulating layer, the contact layer being made of GaxIn1-xAsyP1-y (0?x<0.33, 0?y<0.

Abstract: A light emitting device includes a laser diode that emits a blue light, and a wavelength conversion part that absorbs a part of light emitted from the laser diode and converts a wavelength thereof. The wavelength conversion part includes a YAG-based single crystal phosphor. Irradiance of light emitted from the laser diode and irradiated on the wavelength conversion part is not less than 80 W/mm2.

Abstract: A light emitting device includes a laser diode that emits a blue light, and a wavelength conversion part that absorbs a part of light emitted from the laser diode and converts a wavelength thereof. The wavelength conversion part includes a YAG-based single crystal phosphor. Irradiance of light emitted from the laser diode and irradiated on the wavelength conversion part is not less than 80 W/mm2.

Abstract: Provided is a method for growing a ?-Ga2O3-based single crystal, whereby it becomes possible to grow a ?-Ga2O3-based single crystal having a small variation in crystal structure and also having a high quality in the direction of a b axis. In one embodiment, a method for growing a ?-Ga2O3-based single crystal includes growing a plate-shaped Sn doped ?-Ga2O3-based single crystal in the direction of the b axis using a seed crystal.

Abstract: A ?-Ga2O3-based single-crystal substrate includes a ?-Ga2O3-based single crystal, and a principal surface being a plane parallel to a b-axis of the ?-Ga2O3-based single crystal. A maximum value of ?? on an arbitrary straight line on the principal surface that passes through a center of the principal surface is not more than 0.7264. The ?? is a difference between a maximum value and a minimum value of values obtained by subtracting ?a from ?s at each of measurement positions, where ?s represents an angle defined by an X-ray incident direction and the principal surface at a peak position of an X-ray rocking curve on the straight line and ?a represents an angle on an approximated straight line obtained by using least-squares method to linearly approximate a curve representing a relationship between the ?s and the measurement positions thereof.

Abstract: A method for growing a ?-Ga2O3-based single crystal, can provide a plate-shaped ?-Ga2O3-based single crystal having high crystal quality. In one embodiment, a method for growing a ?-Ga2O3-based single crystal employing an EFG method is provided, the method including: bringing a plate-shaped seed crystal into contact with a Ga2O3-based melt, wherein the plate-shaped seed crystal includes a ?-Ga2O3-based single crystal having a defect density of not more than 5×105 /cm2 in the whole region; and pulling up the seed crystal to grow a ?-Ga2O3-based single crystal.

Abstract: A method for growing a ?-Ga2O3-based single crystal, can provide a plate-shaped ?-Ga2O3-based single crystal having high crystal quality. In one embodiment, a method for growing a ?-Ga2O3-based single crystal employing an EFG method is provided, the method including: bringing a plate-shaped seed crystal into contact with a Ga2O3-based melt, wherein the plate-shaped seed crystal includes a ?-Ga2O3-based single crystal having a defect density of not more than 5×105 /cm2 in the whole region; and pulling up the seed crystal to grow a ?-Ga2O3-based single crystal.

Abstract: A nitride semiconductor template includes a Ga2O3 substrate, a buffer layer formed on the Ga2O3 substrate and including AlN as a principal component, a first nitride semiconductor layer formed on the buffer layer and including AlxGa1-xN (0.2<x?1) as a principal component, and a second nitride semiconductor layer formed on the first nitride semiconductor layer and including AlyGa1-yN (0.2?y?0.55, y<x) as a principal component.

Abstract: A ?-Ga2O3-based single-crystal substrate includes a ?-Ga2O3-based single crystal, and a principal surface being a plane parallel to a b-axis of the ?-Ga2O3-based single crystal. A maximum value of ?? on an arbitrary straight line on the principal surface that passes through a center of the principal surface is not more than 0.7264. The ?? is a difference between a maximum value and a minimum value of values obtained by subtracting ?a from ?s at each of measurement positions, where ?s represents an angle defined by an X-ray incident direction and the principal surface at a peak position of an X-ray rocking curve on the straight line and ?a represents an angle on an approximated straight line obtained by using least-squares method to linearly approximate a curve representing a relationship between the ?s and the measurement positions thereof.

Abstract: Provided is a method for growing a ?-Ga2O3-based single crystal, whereby it becomes possible to grow a ?-Ga2O3-based single crystal having a small variation in crystal structure and also having a high quality in the direction of a b axis. In one embodiment, a method for growing a ?-Ga2O3-based single crystal includes growing a plate-shaped Sn doped ?-Ga2O3-based single crystal in the direction of the b axis using a seed crystal.

Abstract: A crystal layered structure includes a Ga2O3 substrate and a nitride semiconductor layer and is capable of providing a light emitting element having high light output and a light emitting element includes this crystal layered structure. The crystal layered structure includes a Ga2O3 substrate a dielectric layer which is formed on the Ga2O3 substrate so as to partially cover the upper surface of the Ga2O3 substrate, and which has a refractive index difference of 0.15 or less relative to the Ga2O3 substrate and a nitride semiconductor layer which is formed on the Ga2O3 substrate with the dielectric layer interposed therebetween, and which is in contact with the dielectric layer and a portion not covered by the dielectric layer on the upper surface of the Ga2O3 substrate.

Abstract: A method for growing a ?-Ga2O3-based single crystal, can provide a plate-shaped ?-Ga2O3-based single crystal having high crystal quality. In one embodiment, a method for growing a ?-Ga2O3-based single crystal employing an EFG method is provided, the method including: bringing a plate-shaped seed crystal into contact with a Ga2O3-based melt, wherein the plate-shaped seed crystal includes a ?-Ga2O3-based single crystal having a defect density of not more than 5×105/cm2 in the whole region; and pulling up the seed crystal to grow a ?-Ga2O3-based single crystal.

Abstract: A method for manufacturing a semiconductor stacked body, and a semiconductor element including the semiconductor stacked body includes a semiconductor stacked body, including a Ga2O3 substrate having, as a principal plane, a plane on which oxygen atoms are arranged in a hexagonal lattice, an AlN buffer layer formed on the Ga2O3 substrate, and a nitride semiconductor layer formed on the AlN buffer layer.

Abstract: Provided is a crystal layered structure having a low dislocation density on the upper surface of a nitride semiconductor layer on a Ga2O3 substrate, and a method for manufacturing the same. In one embodiment, there is provided a crystal layered structure including: a Ga2O3 substrate; a buffer layer comprising an AlxGayInzN (0?x?1, 0?y?1, 0?z?1, x+y+z=1) crystal on the Ga2O3 substrate; and a nitride semiconductor layer comprising an AlxGayInzN (0?x?1, 0?y?1, 0?z?1, x+y +z=1) crystal including oxygen as an impurity on the buffer layer. The oxygen concentration in a region having a thickness of no less than 200 nm on the nitride semiconductor layer on the side towards the Ga2O3 substrate is no less than 1.0×1018/cm3.

Abstract: Provided is a semiconductor laminate structure including a Ga2O3 substrate and a nitride semiconductor layer with high crystal quality on the Ga2O3 substrate, and also provided is a semiconductor element including this semiconductor laminate structure. In one embodiment, this semiconductor laminate structure includes a ?-Ga2O3 substrate including ?-Ga2O3 crystal and a principal surface inclined from a (?201) surface to a [102] direction nd a nitride semiconductor layer including AlxGayInzN (0?x?1, 0?y?1, 0?z?1, x+y+z=1) crystal formed by epitaxial crystal growth on the principal surface of the ?-Ga2O3 substrate.

Abstract: Provided is a crystal layered structure having a low dislocation density on the upper surface of a nitride semiconductor layer on a Ga2O3 substrate, and a method for manufacturing the same. In one embodiment, there is provided a crystal layered structure including: a Ga2O3 substrate; a buffer layer comprising an AlxGayInzN (0?x?1, 0?y?1, 0?z?1, x+y+z=1) crystal on the Ga2O3 substrate; and a nitride semiconductor layer comprising an AlxGayInzN (0?x?1, 0?y?1, 0?z?1, x+y+z=1) crystal including oxygen as an impurity on the buffer layer. The oxygen concentration in a region having a thickness of no less than 200 nm on the nitride semiconductor layer on the side towards the Ga2O3 substrate is no less than 1.0×1018/cm3.

Abstract: A method for manufacturing a semiconductor stacked body, and a semiconductor element including the semiconductor stacked body includes a semiconductor stacked body, including a Ga203 substrate having, as a principal plane, a plane on which oxygen atoms are arranged in a hexagonal lattice, an AIN buffer layer formed on the Ga203 substrate, and a nitride semiconductor layer formed on the AIN buffer layer.

Abstract: A semiconductor laminate having small electric resistivity in the thickness direction; a process for producing the semiconductor laminate; and a semiconductor element equipped with the semiconductor laminate. include a semiconductor laminate including a Ga203 substrate; an AlGalnN buffer layer which is formed on the Ga203 substrate; a nitride semiconductor layer which is formed on the AlGalnN buffer layer and contains Si; and an Si-rich region which is formed in an area located on the AlGalnN buffer layer side in the nitride semiconductor layer and has an Si concentration of 5×1018/cm3 or more.

Abstract: A light emitting element includes a semiconductor laminated structure including a first semiconductor layer of first conductivity type, a second semiconductor layer of second conductivity type different from the first conductivity type, and an active layer sandwiched between the first semiconductor layer and the second semiconductor layer, a surface electrode including a center electrode disposed on one surface of the semiconductor laminated structure and a thin wire electrode extending from a periphery of the center electrode, and a contact part disposed on a part of another surface of the semiconductor laminated structure extruding a part located directly below the surface electrode, in parallel along the thin wire electrode, and including a plurality of first regions forming the shortest current pathway between the thin wire electrode and a second region allowing the plural first regions to be connected.

Abstract: A light-emitting element includes a semiconductor laminated structure including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type different from the first conductivity type and an active layer sandwiched by the first and second semiconductor layers, a first electrode on one surface side of the semiconductor laminated structure, a conductive reflective layer on an other surface side of the semiconductor laminated structure for reflecting light emitted from the active layer, a contact portion partially formed between the semiconductor laminated structure and the conductive reflective layer and being in ohmic contact with the semiconductor laminated structure, and a second electrode on a part of a surface of the conductive reflective layer on the semiconductor laminated structure without contacting the semiconductor laminated structure for feeding current to the contact portion.