Abstract: A semiconductor device includes: a first substrate having connectors at a first surface; a second substrate bonded with the first substrate having through-holes in a stacking direction of the first and second substrates for respectively exposing the connectors; through-electrodes respectively arranged at through-holes and electrically connected with the connectors; and a protective film for integrally covering the through-electrodes. Frame-shaped slits are formed to respectively surround the through-holes when viewed in a normal direction with respect to the first surface of the first substrate. The protective film is separated by the slit into a region inside the slit and a region outside the slit.

Abstract: A semiconductor device includes: a first substrate having connection parts at a first surface; a second substrate bonded with the first substrate having through-holes in a stacking direction of the first and second substrates for respectively exposing the connection parts; through-electrodes respectively arranged at through-holes and electrically connected with the connection parts; and a protective film for integrally covering the through-electrodes. Frame-shaped slits are formed to respectively surround the through-holes when viewed in a normal direction with respect to the first surface of the first substrate. The protective film is separated by the slit into a region inside the slit and a region outside the slit.

Abstract: A technique of forming an asymmetric pattern by using a phase shift mask, and further, techniques of manufacturing a diffraction grating and a semiconductor device, capable of improving accuracy of a product and capable of shortening manufacturing time. In a method of manufacturing a diffraction grating by using a phase shift mask (in which a light shield part and a light transmission part are periodically arranged), light emitted from an illumination light source is transmitted through the phase shift mask, and a photoresist on a surface of a Si wafer is exposed by providing interference between zero diffraction order light and positive first diffraction order light which are generated by the transmission through this phase shift mask onto the surface of the Si wafer, and a diffraction grating which has a blazed cross-sectional shape is formed on the Si wafer.

Abstract: A technique of forming an asymmetric pattern by using a phase shift mask, and further, techniques of manufacturing a diffraction grating and a semiconductor device, capable of improving accuracy of a product and capable of shortening manufacturing time. In a method of manufacturing a diffraction grating by using a phase shift mask (in which a light shield part and a light transmission part are periodically arranged), light emitted from an illumination light source is transmitted through the phase shift mask, and a photoresist on a surface of a Si wafer is exposed by providing interference between zero diffraction order light and positive first diffraction order light which are generated by the transmission through this phase shift mask onto the surface of the Si wafer, and a diffraction grating which has a blazed cross-sectional shape is formed on the Si wafer.

Abstract: The present invention has been made in view of the above, and an object thereof is to provide a manufacturing technique capable of manufacturing a diffraction grating which is suitable for use in a spectrophotometer and has an apex angle of a convex portion of about 90° and can satisfy high diffraction efficiency and a low stray light amount. A method of manufacturing a diffraction grating, the method including: setting an exposure condition such that a sectional shape of a convex portion of a resist on a substrate, which has been formed by exposure, is an asymmetric triangle with respect to an opening portion shape of a mask having an opening portion with a periodic structure and an angle formed by a long side and a short side of the triangle is about 90°; and performing exposure.

Abstract: After performing a pretreatment step of coating an organic solvent mixed with a polymeric organic compound over a substrate having a tungsten film formed on the surface of the substrate, a chemically amplified resist is coated to form a resist pattern. Further, a ratio of a C1s peak intensity to a W4d peak intensity measured by XPS is 0.1 or mote at the surface of the tungsten film after the pretreatment step and before coating the chemically amplified resist.