Abstract: A semiconductor device according to an embodiment includes first to third semiconductor regions, a structure body, a gate electrode, and a high resistance part. The structure body includes an insulating part and a conductive part. The insulating part is arranged with the third semiconductor region, the second semiconductor region, and a portion of the first semiconductor region. The conductive part is located in the insulating part. The conductive part includes a portion facing the first semiconductor region. The high resistance part is located in the first semiconductor region and has a higher electrical resistance than the first semiconductor region. A plurality of the structure bodies includes first to third structure bodies. The second and third structure bodies are next to the first structure body. The high resistance part overlaps a circle center of an imaginary circle passing through centers of the first to third structure bodies.

Abstract: A heat treatment apparatus includes: a processing container configured to accommodate and process a plurality of substrates in multiple tiers under a reduced-pressure environment; a first heater configured to heat the plurality of substrates accommodated in the processing container; a plurality of gas supply pipes configured to supply a gas to positions having different heights in the processing container; and a second heater provided on a gas supply pipe that supplies a gas to a lowermost position among the plurality of gas supply pipes, and configured to heat the gas in the gas supply pipe.

Abstract: A processing apparatus includes: a plurality of process modules concatenated with one another; and a loader module configured to receive a carrier accommodating a plurality of substrates to be processed by the plurality of process modules, wherein each of the plurality of process modules includes: a heat treatment unit including a processing container configured to accommodate the plurality of substrates and perform a heat treatment on the plurality of substrates; and a gas supply unit disposed on one side surface of the heat treatment unit and configured to supply a gas into the processing container.

Abstract: An electronic component includes; a magnetic-body core having a plate-shaped portion and a core portion which extends from an upper surface of the plate-shaped portion; a winding wire which includes a wound portion wound by a rectangular wire into an Edgewise winding form and two non-wound portions extending from the wound portion to two distal ends, and the core portion is inserted through the wound portion; and a magnetic exterior body which covers at least the wound portion and the core portion. The two non-wound portions are respectively arranged along a bottom surface and at least one of the side surfaces of the plate-shaped portion. Parts of the two non-wound portions arranged along the bottom surface are electrodes.

Abstract: A heat treatment apparatus includes: a processing container configured to accommodate and process a plurality of substrates in multiple tiers under a reduced-pressure environment; a first heater configured to heat the plurality of substrates accommodated in the processing container; a plurality of gas supply pipes configured to supply a gas to positions having different heights in the processing container; and a second heater provided on a gas supply pipe that supplies a gas to a lowermost position among the plurality of gas supply pipes, and configured to heat the gas in the gas supply pipe.

Abstract: A processing apparatus includes: a plurality of process modules concatenated with one another; and a loader module configured to receive a carrier accommodating a plurality of substrates to be processed by the plurality of process modules, wherein each of the plurality of process modules includes: a heat treatment unit including a processing container configured to accommodate the plurality of substrates and perform a heat treatment on the plurality of substrates; and a gas supply unit disposed on one side surface of the heat treatment unit and configured to supply a gas into the processing container.

Abstract: An electronic component includes; a magnetic-body core having a plate-shaped portion and a core portion which extends from an upper surface of the plate-shaped portion; a winding wire which includes a wound portion wound by a rectangular wire into an Edgewise winding form and two non-wound portions extending from the wound portion to two distal ends, and the core portion is inserted through the wound portion; and a magnetic exterior body which covers at least the wound portion and the core portion. The two non-wound portions are respectively arranged along a bottom surface and at least one of the side surfaces of the plate-shaped portion. Parts of the two non-wound portions arranged along the bottom surface are electrodes.

Abstract: An electronic component includes; a magnetic-body core having a plate-shaped portion and a core portion which extends from an upper surface of the plate-shaped portion; a winding wire which includes a wound portion wound by a rectangular wire into an Edgewise winding form and two non-wound portions extending from the wound portion to two distal ends, and the core portion is inserted through the wound portion; and a magnetic exterior body which covers at least the wound portion and the core portion. The two non-wound portions are respectively arranged along a bottom surface and at least one of the side surfaces of the plate-shaped portion. Parts of the two non-wound portions arranged along the bottom surface are electrodes.

Abstract: A flux-cored wire for gas shielded arc welding is provided which affords excellent welding workability for high heat input welding and enables weld metal having good mechanical properties to be obtained. The flux-cored wire for gas shielded arc welding includes C, Mn, Si, elemental Ti, elemental Al, Fe, ZrO2, TiO2, and NaF, each within a predetermined range relative to the total mass of the wire. In the flux-cored wire, 1?[ZrO2]/[NaF]?50 is satisfied, where [ZrO2] is the ZrO2 content, and [NaF] is the NaF content.

Abstract: A substrate processing apparatus includes: a process container configured to receive a substrate therein; a pressure detection part configured to measure an internal pressure of the process container; an exhaust-side valve installed in an exhaust pipe configured to exhaust an interior of the process container; a gas storage tank connected to the process container through a first gas supply pipe; a gas amount measuring part configured to measure an amount of gas stored in the gas storage tank; and a control valve installed in the first gas supply pipe and configured to control the internal pressure of the process container by changing an opening degree of the control valve based on the internal pressure of the process container which is detected by the pressure detection part and by controlling a flow path cross section through which the gas is supplied from the gas storage tank to the process container.

Abstract: A liquid crystal lens includes a first electrode including a first electrode portion having a circular opening and a second electrode portion arranged on an inner side of the opening, a second electrode opposed to the first electrode, a liquid crystal layer formed between the first electrode and the second electrode, and power supplies configured to apply an AC voltage to the first and second electrodes. The power supplies include a first power supply configured to apply a first rectangular wave voltage to the first electrode portion, a second power supply configured to apply a second rectangular wave voltage with a phase identical to that of the first voltage to the second electrode portion, and a third power supply configured to apply a third rectangular wave voltage with a phase different from those of the first and second voltages by 180° to the second electrode.

Abstract: A substrate processing apparatus includes: a process container configured to receive a substrate therein; a pressure detection part configured to measure an internal pressure of the process container; an exhaust-side valve installed in an exhaust pipe configured to exhaust an interior of the process container; a gas storage tank connected to the process container through a first gas supply pipe; a gas amount measuring part configured to measure an amount of gas stored in the gas storage tank; and a control valve installed in the first gas supply pipe and configured to control the internal pressure of the process container by changing an opening degree of the control valve based on the internal pressure of the process container which is detected by the pressure detection part and by controlling a flow path cross section through which the gas is supplied from the gas storage tank to the process container.

Abstract: An electronic component includes; a magnetic-body core having a plate-shaped portion and a core portion which extends from an upper surface of the plate-shaped portion; a winding wire which includes a wound portion wound by a rectangular wire into an Edgewise winding form and two non-wound portions extending from the wound portion to two distal ends, and the core portion is inserted through the wound portion; and a magnetic exterior body which covers at least the wound portion and the core portion. The two non-wound portions are respectively arranged along a bottom surface and at least one of the side surfaces of the plate-shaped portion. Parts of the two non-wound portions arranged along the bottom surface are electrodes.

Abstract: An electronic component which includes a first side-surface and a second side-surface facing the first side-surface, including: a magnetic-body core including a plate-shaped portion and a core portion; a winding wire which includes a wound portion wound with a rectangular wire and two non-wound portions, and of which the core portion is inserted through the wound portion; a magnetic exterior body; a first electrode member including a first side-surface exposed-portion; and a second electrode member including a second side-surface exposed-portion, wherein the first side-surface exposed-portion includes a first connecting portion which extend along the height direction of the first side-surface, the first connecting portion is connected to one of the non-wound portions, the second side-surface exposed-portion includes a second connecting portion which extends along the height direction of the second side-surface, and the second connecting portion is connected to the other of the non-wound portions.

Abstract: A coil component including: a magnetic core which is formed by a magnetic material and which has a top surface, a bottom surface facing the top surface and a side surface continuous approximately perpendicularly to the top surface and the bottom surface; a coil which is buried inside the magnetic core and whose end portion protrudes from the side surface of the magnetic core; a flat-shaped terminal which protrudes from the side surface of the magnetic core, is bent toward the bottom surface of the magnetic core and is connected with the end portion of the coil, wherein there is formed an opening portion at a position corresponding to the place which is bent for the flat-shaped terminal from the side surface to the bottom surface of the magnetic core.

Abstract: A semiconductor integrated device has one signal processing IC and one microcomputer unit (MCU). A few terminals of the IC are connected to the corresponding terminals of the MCU. The terminals of the IC that are connected to the corresponding terminals of the MCU are disposed near each other. Similarly, the terminals of the MCU that are connected to the corresponding terminals of the IC are disposed near each other. Moreover, the IC and the MCU are mounted, on a substrate, so that the connected terminals of the IC and MCU face each other.

Abstract: In an image intermediate-frequency processing apparatus, in addition to a first phase locked loop (PLL) for receiving a television broadcast, there is provided a second PLL including a voltage controlled oscillator (VCO), two frequency-dividing units, a reference signal generating unit, a phase-comparing unit, and a filter. When receiving FM broadcast, a stable oscillation output obtained from the VCO is input into an audio intermediate frequency detector, to obtain an audio signal of high quality.

Abstract: A semiconductor integrated device has one signal processing IC and one MCU. A few terminals of the IC are connected to the corresponding terminals of the MCU. The terminals of the IC that are connected to the corresponding terminals of the MCU are disposed near each other. Similarly, the terminals of the MCU that are connected to the corresponding terminals of the IC are disposed near each other. Moreover, the IC and the MCU are mounted, on a substrate, in such a manner that the above-mentioned terminals of the IC and MCU face each other.