Abstract: A semiconductor light emitting device and a semiconductor laser device having an epitaxial growth layer composed of a III-V group nitride semiconductor. An AlN buffer layer, an n-type GaN intermediate layer, an n-type Al.sub.1-x Ga.sub.X N cladding layer, an In.sub.1-Y Ga.sub.Y N active layer and a p-type Al.sub.1-X Ga.sub.X N cladding layer, and a p-type GaN contact layer are successively formed on an n-type 6H--SiC substrate having a {0001} crystal growth plane. A p-side electrode is formed on the upper surface of the p-type GaN contact layer, and an n-side electrode is formed on the lower surface of the n-type 6H--SiC substrate, after which the n-type 6H--SiC substrate is cleaved along a {1120} plane to form a cavity facet.

Abstract: An automatic wire end arranging system includes a wire holder for holding one ends of the wires, a wire feed device for feeding the wire ends one by one from the wire holder, and a transport device for transporting each wire end from the wire feed device to an arranging device. The arranging device includes a fixture having a plurality of parallel receptive sections, and a table mounted adjacent to the fixture and having a slit, a probe device operable to make electrical contact with the wire end, fed to the table by the transport device, to feed a probe signal, a first drive device operable to move the table, a second drive device operable to bring the wire end on the table into alignment with the slit, and a third drive device operable to urge the wire end, disposed in alignment with the slit, into a selected one of the receptive sections through the slit.