Patents by Inventor Kazuyuki Maetoko
Kazuyuki Maetoko has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7282308Abstract: In the formation of a halftone type phase shift mask, a reactive gas introduction inlet and an inert gas introduction inlet are provided so as to introduce the respective gases separately and by using a reactive low throw sputtering method a molybdenum silicide based phase shifter film is formed. Thereby, it becomes possible to provide a halftone type phase shift mask, which is applicable to an ArF laser or to a KrF laser, by using molybdenum silicide based materials.Type: GrantFiled: June 30, 2006Date of Patent: October 16, 2007Assignees: Ulvac Coating Corporation, Renesas Technology Corp.Inventors: Susumu Kawada, Akihiko Isao, Nobuyuki Yoshioka, Kazuyuki Maetoko
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Publication number: 20070009810Abstract: In the formation of a halftone type phase shift mask, a reactive gas introduction inlet and an inert gas introduction inlet are provided so as to introduce the respective gases separately and by using a reactive low throw sputtering method a molybdenum silicide based phase shifter film is formed. Thereby, it becomes possible to provide a halftone type phase shift mask, which is applicable to an ArF laser or to a KrF laser, by using molybdenum silicide based materials.Type: ApplicationFiled: June 30, 2006Publication date: January 11, 2007Applicants: ULVAC COATING CORPORATION, RENESAS TECHNOLOGY CORP.Inventors: Susumu Kawada, Akihiko Isao, Nobuyuki Yoshioka, Kazuyuki Maetoko
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Patent number: 7090947Abstract: In the formation of a halftone type phase shift mask, a reactive gas introduction inlet and an inert gas introduction inlet are provided so as to introduce the respective gases separately and by using a reactive low throw sputtering method a molybdenum silicide based phase shifter film is formed. Thereby, it becomes possible to provide a halftone type phase shift mask, which is applicable to an ArF laser or to a KrF laser, by using molybdenum silicide based materials.Type: GrantFiled: March 13, 2001Date of Patent: August 15, 2006Assignees: Ulvac Coating Corporation, Renesas Technology Corp.Inventors: Susumu Kawada, Akihiko Isao, Nobuyuki Yoshioka, Kazuyuki Maetoko
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Patent number: 6984473Abstract: A light-block film is formed on a substrate, and a chemically amplified resist film is then formed on the light-block film. The chemically amplified resist film includes a photosensitive acid generator which generates an acid upon irradiation with activating light or radiation, and mainly contains a first resin that becomes soluble in bases by action of the acid. Next, a protective film is formed on the chemically amplified resist film and thereby yields a mask blank. The protective film is formed by dissolving a second resin and the photosensitive acid generator in a solvent that does not substantially dissolve the chemically amplified resist film to prepare a solution, and applying the solution to the chemically amplified resist film.Type: GrantFiled: August 14, 2002Date of Patent: January 10, 2006Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Teruhiko Kumada, Atsuko Fujino, Kazuyuki Maetoko
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Publication number: 20030152845Abstract: A light-block film is formed on a substrate, and a chemically amplified resist film is then formed on the light-block film. The chemically amplified resist film includes a photosensitive acid generator which generates an acid upon irradiation with active light or radiant ray, and mainly contains a first resin that becomes soluble in bases by action of an acid. Next, a protective film is formed on the chemically amplified resist film and thereby yields a mask blank. The protective film is formed by dissolving a second resin and the photosensitive acid generator in a solvent that does not substantially dissolve the chemically amplified resist film, and applying the solution onto the chemically amplified resist film.Type: ApplicationFiled: August 14, 2002Publication date: August 14, 2003Applicant: Mitsubishi Denki Kabushiki KaishaInventors: Teruhiko Kumada, Atsuko Fujino, Kazuyuki Maetoko
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Publication number: 20030108803Abstract: In a method of manufacturing a phase shift mask, after a phase shift layer forming step in which a phase shift layer is formed on a transparent substrate, a light shielding film forming step, in which a Cr film as a light shielding film is formed on an prescribed area on a phase shift layer, is performed. By employing the process, it is possible to provide a method of manufacturing a phase shift mask that enables finding defects produced in the phase shift layer at an early stage of the manufacturing process, a phase shift mask manufactured according to the manufacturing method thereof, and an apparatus manufactured by the same.Type: ApplicationFiled: August 2, 2002Publication date: June 12, 2003Applicant: Mitsubishi Denki Kabushiki KaishaInventor: Kazuyuki Maetoko
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Patent number: 6569577Abstract: A phase-shift photo mask blank comprises a half tone phase-shift film, wherein the half tone phase-shift film consists of at least two layers and in the case of two layers, the refractive index of the upper layer of the film is smaller than that of the lower layer thereof; in the case of three layers, the refractive index of the intermediate layer is smaller than those observed for the upper and lower layers or the refractive index of the upper layer is smaller than that of an intermediate layer; in the case of at least 4 layers, the refractive index of the upper most layer is smaller than that of the layer immediately below the upper most layer. The photo mask blank permits the production of a phase-shift photo mask having a high transmittance at an exposure wavelength and a low reflectance as well as a low transmittance at a defect-inspection wavelength. The photo mask in turn permits the fabrication of a semiconductor device having a fine pattern.Type: GrantFiled: November 3, 2000Date of Patent: May 27, 2003Assignees: Ulvac Coating Corporation, Mitsubishi Denki Kabushiki KaishaInventors: Akihiko Isao, Susumu Kawada, Shuichiro Kanai, Nobuyuki Yoshioka, Kazuyuki Maetoko
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Publication number: 20020009653Abstract: In the formation of a halftone type phase shift mask, a reactive gas introduction inlet and an inert gas introduction inlet are provided so as to introduce the respective gases separately and by using a reactive low throw sputtering method a molybdenum silicide based phase shifter film is formed. Thereby, it becomes possible to provide a halftone type phase shift mask, which is applicable to an ArF laser or to a KrF laser, by using molybdenum silicide based materials.Type: ApplicationFiled: March 13, 2001Publication date: January 24, 2002Applicant: ULVAC COATING CORPORATION and MITSUBISHI DENKI KABUSHIKI KAISHAInventors: Susumu Kawada, Akihiko Isao, Nobuyuki Yoshioka, Kazuyuki Maetoko
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Patent number: 5605776Abstract: A phase-shifting photomask blank has a transparent substrate, a phase-shifting film deposited on the transparent substrate, the phase-shifting film including a transversely central composition which results in a reduced rate of side etching, and a patterned photoresist film masking the phase-shifting film. When the phase-shifting film is dry-etched through the patterned photoresist film into a desired circuit pattern, transversely different rates of side etching of the phase-shifting film are substantially equalized due to the reduced rate of side etching resulting from the transversely central composition. The circuit pattern includes openings defined by removal of the phase-shifting film and shifters left between the openings. The shifters have respective side surfaces free of steps and extending substantially perpendicularly from the transparent substrate.Type: GrantFiled: August 15, 1995Date of Patent: February 25, 1997Assignees: Ulvac Coating Corporation, Mitsubishi Denki Kabushiki KaishaInventors: Akihiko Isao, Susumu Kawada, Atsushi Hayashi, Nobuyuki Yoshioka, Kazuyuki Maetoko