Abstract: The present invention provides an optical recording method and an optical recording apparatus for holographically recording information allowing for reductions in uneven consumption of the material through the thickness of a recording layer during recording to achieve high density recording and an increased recording capacity, an optical recording medium, and an optical reproducing method and an optical reproducing apparatus using the optical recording method. The optical recording method includes irradiating the optical recording medium with an information beam and a reference beam, dividing at least one of the information beam and the reference beam into two or more between a light source thereof and an optical recording medium, and adjusting the optical path lengths of the divided information beams and reference beams so that they focus on points different from each other through the thickness of the recording layer.

Abstract: A solid-state image pickup device comprises: a semiconductor substrate; at least one photoelectric converting film that generates signal charges corresponding to an amount of incident light; at least one set of pixel electrode films arranged in row and column directions and attached to said at least one photoelectric converting film; vertical transfer paths in the semiconductor substrate, extended in the column direction; and charge accumulating portions in the surface portion of the semiconductor substrate that accumulate signal charges from the pixel electrode films, wherein the charge accumulating portions comprise a plurality of sets, each comprising a subset of the charge accumulating portions arranged in the column direction, and wherein the subset reads out the accumulated signal charges to the corresponding one of the vertical transfer paths, and wherein the two adjacent subsets of the charge accumulating portions are shifted to each other in a direction along the vertical transfer paths.

Abstract: A plurality of low-sensitivity pixels 10 and a plurality of high-sensitivity pixels 20 are arranged like a tetragonal grid respectively, and are provided in positions shifted by ½ of an array pitch from each other in a row direction X and a column direction Y. The detected charges of the low-sensitivity pixel 10 and the high-sensitivity pixel 20 are transferred in the column direction Y by a vertical transfer section 31. The charges of the low-sensitivity pixel 10 and the high-sensitivity pixel 20 which are adjacent to each other in the column direction are transferred through the vertical transfer sections 31 which are different from each other.

Abstract: A plurality of low-sensitivity pixels 10 and a plurality of high-sensitivity pixels 20 are arranged like a tetragonal grid respectively, and are provided in positions shifted by ½ of an array pitch from each other in a row direction X and a column direction Y. The detected charges of the low-sensitivity pixel 10 and the high-sensitivity pixel 20 are transferred in the column direction Y by a vertical transfer section 31. The charges of the low-sensitivity pixel 10 and the high-sensitivity pixel 20 which are adjacent to each other in the column direction are transferred through the vertical transfer sections 31 which are different from each other.

Abstract: The present invention provides an optical recording method and an optical recording apparatus for holographically recording information allowing for reductions in uneven consumption of the material through the thickness of a recording layer during recording to achieve high density recording and an increased recording capacity, an optical recording medium, and an optical reproducing method and an optical reproducing apparatus using the optical recording method. The optical recording method includes irradiating the optical recording medium with an information beam and a reference beam, dividing at least one of the information beam and the reference beam into two or more between a light source thereof and an optical recording medium, and adjusting the optical path lengths of the divided information beams and reference beams so that they focus on points different from each other through the thickness of the recording layer.

Abstract: When a still image is picked up with an electronic camera utilizing a MOS type solid-state image pickup device, a flashing device is operated under the condition that both an image signal read operation and an electronic shutter operation are not performed, and the MOS type solid-state image pickup device is controlled so that the same exposure time is set to each photoelectric conversion element. Backlight correction can be achieved.

Abstract: A solid-state image pickup device comprises: a semiconductor substrate; at least one photoelectric converting film that generates signal charges corresponding to an amount of incident light; at least one set of pixel electrode films arranged in row and column directions and attached to said at least one photoelectric converting film; vertical transfer paths in the semiconductor substrate, extended in the column direction; and charge accumulating portions in the surface portion of the semiconductor substrate that accumulate signal charges from the pixel electrode films, wherein the charge accumulating portions comprise a plurality of sets, each comprising a subset of the charge accumulating portions arranged in the column direction, and wherein the subset reads out the accumulated signal charges to the corresponding one of the vertical transfer paths, and wherein the two adjacent subsets of the charge accumulating portions are shifted to each other in a direction along the vertical transfer paths.

Abstract: A number of photoelectric conversion elements are disposed in a plurality of rows and columns in a pixel shift layout, and an analog/digital conversion unit is provided per two photoelectric conversion element columns to form a MOS type solid-state image pickup device. It is possible to suppress an increase in the manufacture cost of MOS type solid state image pickup devices with built-in A/D conversion units and improve the integration degree of photoelectric conversion elements.

Abstract: A solid state image pickup device in which a plurality of photoelectric conversion element pairs are disposed in a row direction and a column direction, each pair constituting one unit including two adjacent photoelectric conversion elements disposed in the column direction, wherein a pitch of pairs in the row direction is generally equal to a pitch of pairs in the column direction.

Abstract: A plurality of low-sensitivity pixels 10 and a plurality of high-sensitivity pixels 20 are arranged like a tetragonal grid respectively, and are provided in positions shifted by ½ of an array pitch from each other in a row direction X and a column direction Y. The detected charges of the low-sensitivity pixel 10 and the high-sensitivity pixel 20 are transferred in the column direction Y by a vertical transfer section 31. The charges of the low-sensitivity pixel 10 and the high-sensitivity pixel 20 which are adjacent to each other in the column direction are transferred through the vertical transfer sections 31 which are different from each other.

Abstract: A solid-state image pickup apparatus includes photoelectric converter elements arranged in an array on a two-dimensional plane, vertical charge transfer paths respectively fabricated adjacent the photoelectric converter elements, vertical charge transfer electrodes for transferring charge one charge transfer stage by each transfer operation, a horizontal charge transfer path connected to end sections respectively of the vertical charge transfer paths for receiving transferred therefrom and for transferring the charge in a horizontal direction, horizontal charge transfer electrodes on the horizontal charge transfer path in a horizontal direction, an output amplifier connected to an end of the horizontal charge transfer path for amplifying charge from the horizontal charge transfer path, and a control circuit to drive the apparatus in an adding movie mode in which the control circuit reads charge, read from the photoelectric converter elements to the vertical transfer path, feeds the charge to all charge transf

Abstract: A solid-state imaging device comprises: a semiconductor substrate which demarcates a two-dimensional surface; a multiplicity of photoelectric conversion units configured in a multiplicity of rows and columns on the surface of said semiconductor substrate; a light shielding film having openings formed above said semiconductor substrate, each of the openings is formed on each of said photoelectric conversion unit; a planarizing insulating film formed on said light shielding film; micro lenses formed on said planarizing insulating film, each micro lens is formed just above each of said opening; and a modifying film having one layer or a plurality of layers formed directly on said micro lenses and having a top surface with different curvature from that of a top surface of the micro lenses.

Abstract: IT-CCD has a number of photoelectric conversion elements disposed in a pixel shift layout in a plurality of rows and columns, a plurality of vertical transfer CCDs for transferring signal charges accumulated in the photoelectric conversion elements toward a horizontal transfer CCD in a zigzag way, and readout gate regions for controlling for corresponding photoelectric conversion elements to read the signal charges accumulated in the photoelectric conversion elements to the vertical transfer CCDs. In manufacturing such IT-CCD, for twos of a plurality of photoelectric conversion element columns, a vertical transfer CCD is provided in an area in plan view between the two photoelectric conversion element columns, and a plurality of charge transfer stages constituting a adjusting portion are formed downstream of the downstream ends of the vertical transfer CCDs.

Abstract: When a still image is picked up with an electronic camera utilizing a MOS type solid-state image pickup device, a flashing device is operated under the condition that both an image signal read operation and an electronic shutter operation are not performed, and the MOS type solid-state image pickup device is controlled so that the same exposure time is set to each photoelectric conversion element. Backlight correction can be achieved.

Abstract: A number of photoelectric conversion elements are disposed in a plurality of rows and columns in a pixel shift layout, and an analog/digital conversion unit is provided per two photoelectric conversion element columns to form a MOS type solid-state image pickup device. It is possible to suppress an increase in the manufacture cost of MOS type solid state image pickup devices with built-in A/D conversion units and improve the integration degree of photoelectric conversion elements.

Abstract: A video data processing apparatus converts one of NTSC type and VGA type video signals to the other or overlays the two types of video signals and outputs them as either an NTSC type overlaid video signal or a VGA type overlaid video signal. The processing apparatus has two video memories for storing video signal data. One of the two video memories stores solely VGA type video data. The other video memory stores either VGA type video data or NTSC type video data depending upon the particular function being carried out by the processing apparatus. Video data may be read out from the other video memory using different scan rates so that an individually dedicated memory is not required for each type of video data in performing the above-mentioned conversions and overlays.

Abstract: A suitable image is obtained of a subject in which the difference in luminance between a bright area and a dark area is very large. The dark area is properly exposed and first image data is obtained. The bright area is properly exposed, and second image data is obtained. The first image data pertaining to the bright area is replaced with the second image data, thereby obtaining composite image data. This is accomplished using an array of photodiodes comprising two sets of photodiodes, one set of the photodiodes comprising filters, and the respective sets of photodiodes output signals to respectively different transfer paths for signal processing.

Abstract: A suitable image signal is obtained even with regard to a subject exhibiting a very large difference in luminance between bright and dark areas. A video signal obtained from a CCD by imaging the subject is amplified by a first amplifier, converted into digital image data A by a first A/D converter and then stored in a first memory. The video signal from the CCD is also amplified by first and second amplifiers, converted into image data B by a second A/D converter and then stored in a second memory. The amplification factor of the first second amplifier is set such that a comparatively dark area of the image of the subject will assume a level having an appropriate brightness. A multiplexer selects data representing a comparatively bright area of the image of the subject from image data read out of the first memory as well as data representing a comparatively dark area of the image of the subject from image data read out of the second memory.

Abstract: A video data processing apparatus converts one of NTSC type and VGA type video signals to the other or overlays the two types of video signals and outputs them as either an NTSC type overlaid video signal or a VGA type overlaid video signal. The processing apparatus has two video memories for storing video signal data. One of the two video memories stores solely VGA type video data. The other video memory stores either VGA type video data or NTSC type video data depending upon the particular function being carried out by the processing apparatus. Video data may be read out from the other video memory using different scan rates so that an individually dedicated memory is not required for each type of video data in performing the above-mentioned conversions and overlays. An output of the video processing apparatus may be fed back to either one of the two video memories so that the output may be stored in one of the memories for later transfer to an external memory.