Patents by Inventor Kazuyuki Miyabe
Kazuyuki Miyabe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11145790Abstract: A semiconductor light emitting device according to an embodiment includes a stacked body. The stacked body includes a first semiconductor layer of a first conductivity type, a light emitting layer is provided on the first semiconductor layer, and a second semiconductor layer of a second conductivity type provided on the light emitting layer. The stacked body includes a first protrusion on an upper surface of the stacked body. The first protrusion protrudes in a first direction from the first semiconductor layer to the light emitting layer. Length of the first protrusion in a second direction perpendicular to the first direction decreases toward the first direction. The first protrusion includes a first portion and a second portion. The first portion has a first side surface inclined with respect to the first direction. The second portion is provided below the first portion and having a second side surface inclined with respect to the first direction.Type: GrantFiled: December 19, 2019Date of Patent: October 12, 2021Assignee: ALPAD CORPORATIONInventors: Go Oike, Hiroshi Katsuno, Koji Kaga, Masakazu Sawano, Yuxiong Ren, Kazuyuki Miyabe
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Publication number: 20200127165Abstract: A semiconductor light emitting device according to an embodiment includes a stacked body. The stacked body includes a first semiconductor layer of a first conductivity type, a light emitting layer is provided on the first semiconductor layer, and a second semiconductor layer of a second conductivity type provided on the light emitting layer. The stacked body includes a first protrusion on an upper surface of the stacked body. The first protrusion protrudes in a first direction from the first semiconductor layer to the light emitting layer. Length of the first protrusion in a second direction perpendicular to the first direction decreases toward the first direction. The first protrusion includes a first portion and a second portion. The first portion has a first side surface inclined with respect to the first direction. The second portion is provided below the first portion and having a second side surface inclined with respect to the first direction.Type: ApplicationFiled: December 19, 2019Publication date: April 23, 2020Applicant: ALPAD CORPORATIONInventors: Go Oike, Hiroshi Katsuno, Koji Kaga, Masakazu Sawano, Yuxiong Ren, Kazuyuki Miyabe
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Patent number: 10559716Abstract: A semiconductor light emitting device according to an embodiment includes a stacked body. The stacked body includes a first semiconductor layer of a first conductivity type, a light emitting layer is provided on the first semiconductor layer, and a second semiconductor layer of a second conductivity type provided on the light emitting layer. The stacked body includes a first protrusion on an upper surface of the stacked body. The first protrusion protrudes in a first direction from the first semiconductor layer to the light emitting layer. Length of the first protrusion in a second direction perpendicular to the first direction decreases toward the first direction. The first protrusion includes a first portion and a second portion. The first portion has a first side surface inclined with respect to the first direction. The second portion is provided below the first portion and having a second side surface inclined with respect to the first direction.Type: GrantFiled: March 8, 2017Date of Patent: February 11, 2020Assignee: ALPAD CORPORATIONInventors: Go Oike, Hiroshi Katsuno, Koji Kaga, Masakazu Sawano, Yuxiong Ren, Kazuyuki Miyabe
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Patent number: 10403790Abstract: A semiconductor light-emitting device includes a light-emitting member that includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer, a first metal layer electrically connected to the first semiconductor layer, and a second metal layer electrically connected to the second semiconductor layer. The light-emitting member has a first surface including a front surface of the first semiconductor layer, a second surface including a front surface of the second semiconductor layer, a side surface including an outer periphery of the first semiconductor layer, and a recess extending inwardly of the second surface to an interior portion of the first semiconductor layer to expose an inner surface on a side of the recess facing the side surface.Type: GrantFiled: October 5, 2018Date of Patent: September 3, 2019Assignee: ALPAD CORPORATIONInventors: Hiroshi Katsuno, Masakazu Sawano, Kazuyuki Miyabe
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Publication number: 20190088821Abstract: A semiconductor light emitting device according to an embodiment includes a stacked body. The stacked body includes a first semiconductor layer of a first conductivity type, a light emitting layer is provided on the first semiconductor layer, and a second semiconductor layer of a second conductivity type provided on the light emitting layer. The stacked body includes a first protrusion on an upper surface of the stacked body. The first protrusion protrudes in a first direction from the first semiconductor layer to the light emitting layer. Length of the first protrusion in a second direction perpendicular to the first direction decreases toward the first direction. The first protrusion includes a first portion and a second portion. The first portion has a first side surface inclined with respect to the first direction. The second portion is provided below the first portion and having a second side surface inclined with respect to the first direction.Type: ApplicationFiled: March 8, 2017Publication date: March 21, 2019Applicant: ALPAD CORPORATIONInventors: Go OIKE, Hiroshi KATSUNO, Koji KAGA, Masakazu SAWANO, Yuxiong REN, Kazuyuki MIYABE
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Publication number: 20190051795Abstract: A semiconductor light-emitting device includes a light-emitting member that includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer, a first metal layer electrically connected to the first semiconductor layer, and a second metal layer electrically connected to the second semiconductor layer. The light-emitting member has a first surface including a front surface of the first semiconductor layer, a second surface including a front surface of the second semiconductor layer, a side surface including an outer periphery of the first semiconductor layer, and a recess extending inwardly of the second surface to an interior portion of the first semiconductor layer to expose an inner surface on a side of the recess facing the side surface.Type: ApplicationFiled: October 5, 2018Publication date: February 14, 2019Inventors: Hiroshi KATSUNO, Masakazu SAWANO, Kazuyuki MIYABE
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Patent number: 10134806Abstract: A semiconductor light emitting device includes first and second light emitting bodies, a first electrode, a second electrode and a first interconnection. The first and second light emitting bodies are disposed on a conductive substrate, and each includes first and second semiconductor layers and a light emitting layer therebetween. The first electrode is provided between the first light emitting body and the conductive substrate, and electrically connected to a first semiconductor layer and the conductive substrate. The second electrode is provided between the second light emitting body and the conductive substrate, and electrically connected to a first semiconductor layer. The first interconnection electrically connects the second semiconductor layer of the first light emitting body and the second electrode. The first interconnection includes a first portion extending over the first and second light emitting bodies and a second portion extending into the second light emitting body.Type: GrantFiled: June 28, 2017Date of Patent: November 20, 2018Assignee: Alpad CorporationInventors: Koji Kaga, Jumpei Tajima, Toshiyuki Oka, Kazuyuki Miyabe
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Patent number: 10128408Abstract: A semiconductor light-emitting device includes a light-emitting member that includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer, a first metal layer electrically connected to the first semiconductor layer, and a second metal layer electrically connected to the second semiconductor layer. The light-emitting member has a first surface including a front surface of the first semiconductor layer, a second surface including a front surface of the second semiconductor layer, a side surface including an outer periphery of the first semiconductor layer, and a recess extending inwardly of the second surface to an interior portion of the first semiconductor layer to expose an inner surface on a side of the recess facing the side surface.Type: GrantFiled: January 19, 2018Date of Patent: November 13, 2018Assignee: Alpad CorporationInventors: Hiroshi Katsuno, Masakazu Sawano, Kazuyuki Miyabe
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Publication number: 20180145215Abstract: A semiconductor light-emitting device includes a light-emitting member that includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer, a first metal layer electrically connected to the first semiconductor layer, and a second metal layer electrically connected to the second semiconductor layer. The light-emitting member has a first surface including a front surface of the first semiconductor layer, a second surface including a front surface of the second semiconductor layer, a side surface including an outer periphery of the first semiconductor layer, and a recess extending inwardly of the second surface to an interior portion of the first semiconductor layer to expose an inner surface on a side of the recess facing the side surface.Type: ApplicationFiled: January 19, 2018Publication date: May 24, 2018Inventors: Hiroshi KATSUNO, Masakazu SAWANO, Kazuyuki MIYABE
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Patent number: 9911899Abstract: A semiconductor light-emitting device includes a light-emitting member that includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer, a first metal layer electrically connected to the first semiconductor layer, and a second metal layer electrically connected to the second semiconductor layer. The light-emitting member has a first surface including a front surface of the first semiconductor layer, a second surface including a front surface of the second semiconductor layer, a side surface including an outer periphery of the first semiconductor layer, and a recess extending inwardly of the second surface to an interior portion of the first semiconductor layer to expose an inner surface on a side of the recess facing the side surface.Type: GrantFiled: February 26, 2016Date of Patent: March 6, 2018Assignee: ALPAD CorporationInventors: Hiroshi Katsuno, Masakazu Sawano, Kazuyuki Miyabe
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Publication number: 20170301725Abstract: A semiconductor light emitting device includes first and second light emitting bodies, a first electrode, a second electrode and a first interconnection. The first and second light emitting bodies are disposed on a conductive substrate, and each includes first and second semiconductor layers and a light emitting layer therebetween. The first electrode is provided between the first light emitting body and the conductive substrate, and electrically connected to a first semiconductor layer and the conductive substrate. The second electrode is provided between the second light emitting body and the conductive substrate, and electrically connected to a first semiconductor layer. The first interconnection electrically connects the second semiconductor layer of the first light emitting body and the second electrode. The first interconnection includes a first portion extending over the first and second light emitting bodies and a second portion extending into the second light emitting body.Type: ApplicationFiled: June 28, 2017Publication date: October 19, 2017Inventors: Koji Kaga, Jumpei Tajima, Toshiyuki Oka, Kazuyuki Miyabe
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Patent number: 9722162Abstract: A semiconductor light emitting device includes first and second light emitting bodies, a first electrode, a second electrode and a first interconnection. The first and second light emitting bodies are disposed on a conductive substrate, and each includes first and second semiconductor layers and a light emitting layer therebetween. The first electrode is provided between the first light emitting body and the conductive substrate, and electrically connected to a first semiconductor layer and the conductive substrate. The second electrode is provided between the second light emitting body and the conductive substrate, and electrically connected to a first semiconductor layer. The first interconnection electrically connects the second semiconductor layer of the first light emitting body and the second electrode. The first interconnection includes a first portion extending over the first and second light emitting bodies and a second portion extending into the second light emitting body.Type: GrantFiled: February 29, 2016Date of Patent: August 1, 2017Assignee: Kabushiki Kaisha ToshibaInventors: Koji Kaga, Jumpei Tajima, Toshiyuki Oka, Kazuyuki Miyabe
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Publication number: 20170077366Abstract: A semiconductor light emitting device includes first and second light emitting bodies, a first electrode, a second electrode and a first interconnection. The first and second light emitting bodies are disposed on a conductive substrate, and each includes first and second semiconductor layers and a light emitting layer therebetween. The first electrode is provided between the first light emitting body and the conductive substrate, and electrically connected to a first semiconductor layer and the conductive substrate. The second electrode is provided between the second light emitting body and the conductive substrate, and electrically connected to a first semiconductor layer. The first interconnection electrically connects the second semiconductor layer of the first light emitting body and the second electrode. The first interconnection includes a first portion extending over the first and second light emitting bodies and a second portion extending into the second light emitting body.Type: ApplicationFiled: February 29, 2016Publication date: March 16, 2017Inventors: Koji Kaga, Jumpei Tajima, Toshiyuki Oka, Kazuyuki Miyabe
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Publication number: 20160372627Abstract: A semiconductor light emitting device includes a light emitting body that includes a light emitting layer between first and second semiconductor layers, a substrate on the second semiconductor layer side of the light emitting body layer, a first metal layer electrically connected to one of the first and second semiconductor layers, and extending therefrom between the substrate and the light emitting body to a location outside of the perimeter light emitting body, a conductive layer overlying the portion of the first metal layer which extends outside the perimeter of the light emitting body, and a second metal layer disposed on a portion of the conductive layer overlying the portion of the first metal layer. The second metal layer is located in part within opening extending inwardly of a side surface of the light emitting body. A sidewall of the opening connects to the side surface along a curved surface.Type: ApplicationFiled: February 23, 2016Publication date: December 22, 2016Inventors: Masakazu SAWANO, Hiroshi KATSUNO, Kazuyuki MIYABE
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Publication number: 20160365481Abstract: A semiconductor light-emitting device includes a light-emitting member that includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer, a first metal layer electrically connected to the first semiconductor layer, and a second metal layer electrically connected to the second semiconductor layer. The light-emitting member has a first surface including a front surface of the first semiconductor layer, a second surface including a front surface of the second semiconductor layer, a side surface including an outer periphery of the first semiconductor layer, and a recess extending inwardly of the second surface to an interior portion of the first semiconductor layer to expose an inner surface on a side of the recess facing the side surface.Type: ApplicationFiled: February 26, 2016Publication date: December 15, 2016Inventors: Hiroshi KATSUNO, Masakazu SAWANO, Kazuyuki MIYABE
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Publication number: 20160276526Abstract: According to one embodiment, a semiconductor light emitting device includes a base body, first to sixth semiconductor layers, first to third conductive layers, a structure, and a first insulating layer. The first semiconductor layer and the structure are separated from the base body in a first direction. The second semiconductor layer is provided between the first semiconductor layer and the base body. The third semiconductor layer is provided between the first r and second semiconductor layers. The fourth semiconductor layer is separated from the base body in the first direction. The fifth semiconductor layer is provided between the fourth semiconductor layer and the base body. The sixth semiconductor layer is provided between the fourth and fifth semiconductor layers. The conductive layers are electrically connected with the semiconductor layers. A portion of the first insulating layer is provided between the third and fifth semiconductor layers.Type: ApplicationFiled: September 2, 2015Publication date: September 22, 2016Inventors: Koji Kaga, Toshiyuki Oka, Masakazu Sawano, Kazuyuki Miyabe
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Publication number: 20160276540Abstract: A semiconductor light-emitting element includes a substrate having a convex portion protruding therefrom. A first semiconductor layer having a first conductivity type is separated from the substrate in a first direction. A second semiconductor layer of a second conductivity type is between the first semiconductor layer and the substrate. A third semiconductor is between the first and second semiconductor layers. A first electrode is provided between the first semiconductor layer and the substrate, and is electrically connected to the first semiconductor layer. A second electrode is provided between the second semiconductor layer and the substrate, and is electrically connected to the second semiconductor layer. A metal layer is between the first electrode and the second region, and between the second electrode and the first region. The metal layer includes a concave portion which conforms to the convex portion of the substrate.Type: ApplicationFiled: February 17, 2016Publication date: September 22, 2016Inventors: Kazuyuki MIYABE, Akira ISHIGURO, Hiroshi KATSUNO, Shinji YAMADA
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Publication number: 20160276539Abstract: A semiconductor light-emitting element includes a first layer having a first conductivity. A second layer having a second conductivity is provided between the first layer and a substrate. A third layer is between the first and second layers. A first electrode is between the substrate and the first layer and is connected to the first layer. An insulating layer is between the first electrode and the substrate and between the first electrode and the second layer. A metal film is between the insulating layer and the substrate and covers the insulating layer and the second layer. The first electrode is in a concave portion extending between the second layer and the first layer. The insulating layer has a surface having a region in which a distance between the insulating layer and the substrate is decreased in a direction from the second layer to the first electrode.Type: ApplicationFiled: February 12, 2016Publication date: September 22, 2016Inventors: Koji KAGA, Hiroshi KATSUNO, Masakazu SAWANO, Akira ISHIGURO, Kazuyuki MIYABE, Takashi KUNIHIRO
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Publication number: 20160211419Abstract: A light emitting device includes a first semiconductor layer of a first conductivity type having an upper and lower surface sides. A first portion of the first semiconductor layer is adjacent to a second portion of the first semiconductor layer. A light emitting layer is adjacent to the first portion on the under surface side. A second semiconductor layer of a second conductivity type is on the light emitting layer such that the light emitting layer is between the second semiconductor layer and the first portion. A first conductive layer electrically contacts the second portion of the first semiconductor layer on the under surface side and extends beyond an outer edge of the first semiconductor layer. A protecting layer comprising a metal is on an upper surface side of the first conductive layer. A pad electrode is on the upper surface side of the first conductive layer.Type: ApplicationFiled: January 13, 2016Publication date: July 21, 2016Inventors: Koji Kaga, Hiroshi Katsuno, Masakazu Sawano, Go Oike, Kazuyuki Miyabe
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Publication number: 20160211417Abstract: A semiconductor light-emitting element includes a stacked body having a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer between the first and second semiconductor layers. A first metal layer is on the second semiconductor layer. The first metal layer includes a first region extending outward from the stacked body and a second region adjacent to the first region. A distance between a lower surface and an upper surface of the first metal layer in the first region is shorter than a distance between the lower end and the upper surface of the first metal layer in the second region. The lower and upper surfaces of the first metal layer in the first region extend along an outer edge of the first metal layer.Type: ApplicationFiled: January 12, 2016Publication date: July 21, 2016Inventors: Hiroshi KATSUNO, Masakazu SAWANO, Koji KAGA, Go OIKE, Kazuyuki MIYABE