Abstract: The present invention provides a fullerene derivative having an electron donating group adjacent to the fullerene nucleus, represented by formula (I) which exhibits a high LUMO energy and a high open circuit voltage based thereon and which is highly compatible with polymers and excellent in charge mobility and charge separation ability: wherein the encircled FL represents fullerene C60 or C70, Donor-Sub represents a substituent having at least one electron donating substituent atom located at a position apart from the fullerene nucleus by two bonds, R is hydrogen, Donor-Sub, an alkyl, cycloalkyl, alkoxy, alkoxy-substituted alkyl, alkoxy-substituted alkoxy, alkylthio-substituted alkoxy, alkylthio, alkylthio-substituted alkylthio, or alkoxy-substituted alkylthio group, having a total carbon atoms of 1 or more and 20 or fewer, or a benzyl or phenyl group, and n is an integer of 1 to 10.

Abstract: The present invention provides a novel methanofullerene derivative applicable as an organic semiconductor material in electronics devices such as organic FETs and electroluminescence devices and solar cells, represented by formula (I) wherein the average value of 13C-NMR chemical shift values of carbons C2 and C2? on FL, bonded to C1 is 80.10 ppm or greater, wherein FL represents fullerenes, X1 and X2 are each an aromatic hydrocarbon, an alkyl group or the like, C2 and C2? are carbon atoms on FL, bonded to C1, and n is an integer of 1 to 10.

Abstract: The present invention provides a fullerene derivative having an electron donating group adjacent to the fullerene nucleus, represented by formula (I) which exhibits a high LUMO energy and a high open circuit voltage based thereon and which is highly compatible with polymers and excellent in charge mobility and charge separation ability: wherein the encircled FL represents fullerene C60 or C70, Donor-Sub represents a substituent having at least one electron donating substituent atom located at a position apart from the fullerene nucleus by two bonds, R is hydrogen, Donor-Sub, an alkyl, cycloalkyl, alkoxy, alkoxy-substituted alkyl, alkoxy-substituted alkoxy, alkylthio-substituted alkoxy, alkylthio, alkylthio-substituted alkylthio, or alkoxy-substituted alkylthio group, having a total carbon atoms of 1 or more and 20 or fewer, or a benzyl or phenyl group, and n is an integer of 1 to 10.

Abstract: The present invention provides a novel methanofullerene derivative applicable as an organic semiconductor material in electronics devices such as organic FETs and electroluminescence devices and solar cells, represented by formula (I) wherein the average value of 13C-NMR chemical shift values of carbons C2 and C2? on FL, bonded to C1 is 80.10 ppm or greater, wherein FL represents fullerenes, X1 and X2 are each an aromatic hydrocarbon, an alkyl group or the like, C2 and C2? are carbon atoms on FL, bonded to C1, and n is an integer of 1 to 10.

Abstract: An organic electroluminescent device having an organic layer between a pair of electrodes. The organic layer (in particular, a hole-transporting layer) has a polymer of a vinyl compound represented by the following formula (1): wherein R1 and R2 are the same or different, each representing a hydrogen atom, a halogen atom, an alkyl group or an alkoxy group. The glass transition temperature of the polymer is about 200 to 250° C., and the polymer has high heat-resistance. Thus, the use of the polymer improves heat resistance of an organic EL device.

Abstract: An organic electroluminescent device having an organic layer between a pair of electrodes. The organic layer (in particular, a hole-transporting layer) has a polymer of a vinyl compound represented by the following formula (1): wherein R1 and R2 are the same or different, each representing a hydrogen atom, a halogen atom, an alkyl group or an alkoxy group. The glass transition temperature of the polymer is about 200 to 250° C., and the polymer has high heat-resistance. Thus, the use of the polymer improves heat resistance of an organic EL device.

Abstract: An organic electroluminescent device having an organic layer between a pair of electrodes. The organic layer (in particular, a hole-transporting layer) has a polymer of a vinyl compound represented by the following formula (1): wherein R1 and R2 are the same or different, each representing a hydrogen atom, a halogen atom, an alkyl group or an alkoxy group. The glass transition temperature of the polymer is about 200 to 250° C., and the polymer has high heat-resistance. Thus, the use of the polymer improves heat resistance of an organic EL device.

Abstract: An organic electroluminescent device having an organic layer between a pair of electrodes.

Abstract: An organic electroluminescent device has an organic layer between a pair of electrodes. The organic layer (in particular, a hole-transporting layer) has a polymer of a vinyl compound represented by the following formula (1): wherein R1 and R2 are the same or different, each representing a hydrogen atom, a halogen atom, an alkyl group or an alkoxy group. The glass transition temperature of the polymer is about 200 to 250° C., and the polymer has high heat-resistance. Thus, the use of the polymer improves heat resistance of an organic EL device.

Abstract: An organic electroluminescent device comprises an organic layer between a pair of electrodes.

Abstract: An opto-electronic hybrid integrated circuit of the present invention satisfies a low-loss optical waveguide function, an optical bench function and a high-frequency electrical wiring function. The circuit includes a substrate such as a silicon substrate, a dielectric optical waveguide part arranged in a recess of the substrate, and an optical device mounting part formed on a protrusion of the substrate. An electrical wiring part is disposed on the dielectric layer. The optical device is mounted on the substrate. An optical sub-module includes the optical device which is possible to mount on the substrate.

Abstract: An opto-electronic hybrid integrated circuit of the present invention satisfy a low-loss optical waveguide function, an optical bench function and a high-frequency electrical wiring function. The circuit includes a substrate such as a silicon substrate, a dielectric optical waveguide part arranged in a recess of the substrate, and an optical device mounting part formed on a protrusion of the substrate. An electrical wiring part is disposed on the dielectric layer. The optical device is mounted on the substrate. An optical sub-module includes the optical device which is possible to mount on the substrate.

Abstract: An opto-electronic hybrid integrated circuit of the present invention satisfy a low-loss optical waveguide function, an optical bench function and a high-frequency electrical wiring function. The circuit includes a substrate such as a silicon substrate, a dielectric optical waveguide part arranged in a recess of the substrate, and an optical device mounting part formed on a protrusion of the substrate. An electrical wiring part is disposed on the dielectric layer. The optical device is mounted on the substrate. An optical sub-module includes the optical device which is possible to mount on the substrate.

Abstract: In a method of manufacturing a thin film of a compound oxide, different types of materials for forming the compound oxide are evaporated in vacuum. The evaporated materials are heated and deposited on a substrate to form a thin film. An oxygen ion beam having energy of 10 to 200 eV is implanted in the thin film which is being formed on the substrate. Alignment of the constituting elements is performed on the basis of a substrate temperature and energy of the oxygen ion beam, thereby causing epitaxial growth.

Abstract: In a method of manufacturing a thin film of a compound oxide, different types of materials for forming the compound oxide are evaporated in vacuum. The evaporated materials are heated and deposited on a substrate to form a thin film. An oxygen ion beam having energy of 10 to 200 eV is implanted in the thin film which is being formed on the substrate. Alignment of the constituting elements is performed on the basis of a substrate temperature and energy of the oxygen ion beam, thereby causing epitaxial growth.