Patents by Inventor Kazuyuki SHOUJI

Kazuyuki SHOUJI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device
    Patent number: 10229912
    Abstract: According to the present invention, a semiconductor device includes a semiconductor layer, a source electrode provided in the semiconductor layer, a drain electrode provided in the semiconductor layer and disposed away from the source electrode, a first gate electrode provided between the source electrode and the drain electrode and a second gate electrode provided between the source electrode and the drain electrode, the second gate electrode having at least a part thereof located closer to the drain electrode than the first gate electrode. The semiconductor layer includes a first facing part that is a part facing the first gate electrode; and a second facing part that is a part facing the second gate electrode. The first facing part does not conduct when a first gate voltage is 0 V or less. The second facing part does not conduct when a second gate voltage is 0 V or less.
    Type: Grant
    Filed: April 18, 2016
    Date of Patent: March 12, 2019
    Assignee: ADVANTEST CORPORATION
    Inventors: Taku Sato, Kazuya Uryu, Kazuyuki Shouji
  • SEMICONDUCTOR DEVICE
    Publication number: 20180151568
    Abstract: According to the present invention, a semiconductor device includes a semiconductor layer, a source electrode provided in the semiconductor layer, a drain electrode provided in the semiconductor layer and disposed away from the source electrode, a first gate electrode provided between the source electrode and the drain electrode and a second gate electrode provided between the source electrode and the drain electrode, the second gate electrode having at least a part thereof located closer to the drain electrode than the first gate electrode. The semiconductor layer includes a first facing part that is a part facing the first gate electrode; and a second facing part that is a part facing the second gate electrode. The first facing part does not conduct when a first gate voltage is 0 V or less. The second facing part does not conduct when a second gate voltage is 0 V or less.
    Type: Application
    Filed: April 18, 2016
    Publication date: May 31, 2018
    Applicant: ADVANTEST CORPORATION
    Inventors: Taku SATO, Kazuya URYU, Kazuyuki SHOUJI