Abstract: A semiconductor device and its manufacturing method are offered to increase the number of semiconductor devices obtained from a semiconductor wafer while simplifying a manufacturing process. After forming a plurality of pad electrodes in a predetermined region on a top surface of a semiconductor substrate, a supporter is bonded to the top surface of the semiconductor substrate through an adhesive layer. Next, an opening is formed in the semiconductor substrate in a region overlapping the predetermined region. A wiring layer electrically connected with each of the pad electrodes is formed in the opening. After that, a stacked layer structure including the semiconductor substrate and the supporter is cut by dicing along a dicing line that is outside the opening.

Abstract: When a bump electrode is formed on an opening formed in a semiconductor substrate, the invention prevents a void that is caused by gas trapped in the opening. A method of manufacturing a semiconductor device of the invention includes forming a first wiring on a main surface of a semiconductor substrate, forming an opening in the semiconductor substrate from the back surface to the main surface so as to expose the back surface of the first wiring, forming a second wiring connected to the back surface of the first wiring and extending from inside the opening onto the back surface of the semiconductor substrate, forming a solder layer connected to part of the second wiring on the bottom of the opening and extending from inside the opening onto the back surface of the semiconductor substrate, and forming a bump electrode on the opening by reflowing the solder layer.

Abstract: When a bump electrode is formed on an opening formed in a semiconductor substrate, the invention prevents a void that is caused by gas trapped in the opening. A method of manufacturing a semiconductor device of the invention includes forming a first wiring on a main surface of a semiconductor substrate, forming an opening in the semiconductor substrate from the back surface to the main surface so as to expose the back surface of the first wiring, forming a second wiring connected to the back surface of the first wiring and extending from inside the opening onto the back surface of the semiconductor substrate, forming a solder layer connected to part of the second wiring on the bottom of the opening and extending from inside the opening onto the back surface of the semiconductor substrate, and forming a bump electrode on the opening by reflowing the solder layer.

Abstract: A semiconductor device and its manufacturing method are offered to increase the number of semiconductor devices obtained from a semiconductor wafer while simplifying a manufacturing process. After forming a plurality of pad electrodes in a predetermined region on a top surface of a semiconductor substrate, a supporter is bonded to the top surface of the semiconductor substrate through an adhesive layer. Next, an opening is formed in the semiconductor substrate in a region overlapping the predetermined region. A wiring layer electrically connected with each of the pad electrodes is formed in the opening. After that, a stacked layer structure including the semiconductor substrate and the supporter is cut by dicing along a dicing line that is outside the opening.