Abstract: A wafer stage includes an electrostatic chuck (ESC) plate, an upper supporting plate, a lower supporting plate and a temperature controller. The ESC plate includes a first surface that supports a wafer. The upper supporting plate is bonded to a second surface of the ESC plate opposite to the first surface. The lower supporting plate overlaps the upper supporting plate. The temperature controller is disposed between the upper supporting plate and the lower supporting plate. The ESC plate includes ceramics. The upper supporting plate includes a composite material of aluminum or aluminum alloy and ceramics or carbon. The ESC plate and the upper supporting plate are directly bonded to each other by a room temperature solid bonding process. Thus, the wafer stage has sufficient strength to withstand pressure differences between a vacuum and atmospheric pressure, improved temperature response by minimizing heat capacity, and prevents warpage of the ESC plate.

Abstract: A wafer loading apparatus capable of making a temperature distribution in a surface of a wafer more uniform is provided. The wafer loading apparatus includes a stage on which a wafer is loaded, and a heater installed in the stage to heat a wafer loaded on a loading surface of the stage. The stage includes a top plate providing the loading surface. The heater includes first heater coils disposed on a surface of the top plate opposite to the loading surface, electrode portions electrically connected to the first heater coils and arranged side by side along an outer peripheral portion of the top plate, and a second heater coil disposed outside the first heater coils. The second heater coil generates heat in such a way that a heat distribution in a circumferential direction is varied corresponding to the arrangement of the electrode portions.

Abstract: A wafer stage includes an electrostatic chuck (ESC) plate, an upper supporting plate, a lower supporting plate and a temperature controller. The ESC plate includes a first surface that supports a wafer. The upper supporting plate is bonded to a second surface of the ESC plate opposite to the first surface. The lower supporting plate overlaps the upper supporting plate. The temperature controller is disposed between the upper supporting plate and the lower supporting plate. The ESC plate includes ceramics. The upper supporting plate includes a composite material of aluminum or aluminum alloy and ceramics or carbon. The ESC plate and the upper supporting plate are directly bonded to each other by a room temperature solid bonding process. Thus, the wafer stage has sufficient strength to withstand pressure differences between a vacuum and atmospheric pressure, improved temperature response by minimizing heat capacity, and prevents warpage of the ESC plate.

Abstract: Provided is a film forming apparatus that can be used for an ultrahigh temperature film forming process. A film forming apparatus for forming a film on a wafer in a chamber may include a rotary stage configured to rotate in a circumferential direction, the rotary stage having a loading surface, on which the wafer may be loaded, a heater provided in the rotary stage to heat the wafer loaded on the loading surface, and a power supply part configured to supply electric power to the heater. The rotary stage includes a rotary shaft, which may be provided to penetrate the chamber and may be supported to be rotatable, the power supply part may be electrically coupled to the heater and may have a wire, which may be extended to an outside of the chamber through a penetration hole penetrating the rotary shaft in an axis direction, the heater may be configured to heat the wafer loaded on the loading surface of the rotary stage, to a temperature of 600° C. to 2000° C.

Abstract: A wafer loading apparatus capable of making a temperature distribution in a surface of a wafer more uniform is provided. The wafer loading apparatus includes a stage on which a wafer is loaded, and a heater installed in the stage to heat a wafer loaded on a loading surface of the stage. The stage includes a top plate providing the loading surface. The heater includes first heater coils disposed on a surface of the top plate opposite to the loading surface, electrode portions electrically connected to the first heater coils and arranged side by side along an outer peripheral portion of the top plate, and a second heater coil disposed outside the first heater coils. The second heater coil generates heat in such a way that a heat distribution in a circumferential direction is varied corresponding to the arrangement of the electrode portions.

Abstract: The present invention provides a bias sputtering film forming process and film forming apparatus that can form a coating film having a good film thickness distribution in a minute coated surface of a complicated shape, such as contact holes, through-holes and wiring grooves, especially for the sidewall portions thereof. To a bias sputtering film forming apparatus provided with a sputtering cathode 4 and a substrate stage 5 holding a target 6 and a substrate 7 facing to each other, respectively, in a vacuum chamber 1 having a sputtering gas inlet 3 and a vacuum exhaust port 2, a power source 9 of a variable output for the substrate stage 5 and a control system 10 are connected.

Abstract: The present invention provides a bias sputtering film forming process and film forming apparatus that can form a coating film having a good film thickness distribution in a minute coated surface of a complicated shape, such as contact holes, through-holes and wiring grooves, especially for the sidewall portions thereof.