Abstract: A semiconductor structure includes a substrate, a channel region, a gate structure, and source/drain regions. The channel region is over the substrate. The gate structure is over the channel region, and includes a high-k dielectric layer, a tungsten layer over the high-k dielectric layer, and a fluorine-containing work function layer over the tungsten layer. The source/drain regions are at opposite sides of the channel region.

Abstract: A semiconductor device includes a substrate, a semiconductor fin, a gate structure, and source/drain structures. The semiconductor fin extends upwardly from the substrate. The gate structure is across the semiconductor fin and includes a high-k dielectric layer over the semiconductor fin, a fluorine-containing work function layer over the high-k dielectric layer and comprising fluorine, a tungsten-containing layer over the fluorine-containing work function layer, and a metal gate electrode over the tungsten-containing layer. The source/drain structures are on the semiconductor fin and at opposite sides of the gate structure.

Abstract: The present disclosure describes a method for the formation of gate stacks having two or more titanium-aluminum (TiAl) layers with different Al concentrations (e.g., different Al/Ti ratios). For example, a gate structure can include a first TiAl layer with a first Al/Ti ratio and a second TiAl layer with a second Al/Ti ratio greater than the first Al/Ti ratio of the first TiAl layer.

Abstract: A semiconductor device includes a substrate, a semiconductor fin, a gate structure, and source/drain structures. The semiconductor fin extends upwardly from the substrate. The gate structure is across the semiconductor fin and includes a high-k dielectric layer over the semiconductor fin, a fluorine-containing work function layer over the high-k dielectric layer and comprising fluorine, a tungsten-containing layer over the fluorine-containing work function layer, and a metal gate electrode over the tungsten-containing layer. The source/drain structures are on the semiconductor fin and at opposite sides of the gate structure.

Abstract: A high-k dielectric layer is formed over a semiconductor substrate having a first trench and a second trench. A barrier layer is formed over the high-k dielectric layer. A work function layer is deposited over the barrier layer, and is patterned and removed from the second trench, exposing the barrier layer at the second trench. A precursor is deposited selectively over the barrier layer in the second trench, and deposited over the work function layer in the first trench. The precursor selectively reacts with the barrier layer to selectively etch the barrier layer, and selectively reacts with the work function layer to selectively etch a top oxidized portion of the work function layer and deposit a protective layer. The reaction products between the precursor and the barrier layer, and the reaction products between the precursor and the work function layer are removed by using an inert gas.

Abstract: A high-k dielectric layer is formed over a semiconductor substrate having a first trench and a second trench. A barrier layer is formed over the high-k dielectric layer. A work function layer is deposited over the barrier layer, and is patterned and removed from the second trench, exposing the barrier layer at the second trench. A precursor is deposited selectively over the barrier layer in the second trench, and deposited over the work function layer in the first trench. The precursor selectively reacts with the barrier layer to selectively etch the barrier layer, and selectively reacts with the work function layer to selectively etch a top oxidized portion of the work function layer and deposit a protective layer. The reaction products between the precursor and the barrier layer, and the reaction products between the precursor and the work function layer are removed by using an inert gas.

Abstract: The present disclosure describes a method for the formation of gate stacks having two or more titanium-aluminum (TiAl) layers with different Al concentrations (e.g., different Al/Ti ratios). For example, a gate structure can include a first TiAl layer with a first Al/Ti ratio and a second TiAl layer with a second Al/Ti ratio greater than the first Al/Ti ratio of the first TiAl layer.

Abstract: The present disclosure describes a method for the formation of gate stacks having two or more titanium-aluminum (TiAl) layers with different Al concentrations (e.g., different Al/Ti ratios). For example, a gate structure can include a first TiAl layer with a first Al/Ti ratio and a second TiAl layer with a second Al/Ti ratio greater than the first Al/Ti ratio of the first TiAl layer.

Abstract: A method includes applying a first amount of heat to a vapor region of a precursor canister, measuring an indication of saturated vapor pressure within the vapor region during the applying the first amount of heat, and applying a second amount of heat to the vapor region of the precursor canister, the second amount of heat being adjusted from the first amount of heat based on the indication of saturated vapor pressure.

Abstract: The present disclosure describes a method for the formation of gate stacks having two or more titanium-aluminum (TiAl) layers with different Al concentrations (e.g., different Al/Ti ratios). For example, a gate structure can include a first TiAl layer with a first Al/Ti ratio and a second TiAl layer with a second Al/Ti ratio greater than the first Al/Ti ratio of the first TiAl layer.

Abstract: The present invention provides a solar power converter with isolated bipolar full-bridge resonant circuit. This solar power converter system of the present invention have isolated two-stage full-bridge resonant circuit having a full-bridge resonant converter unit for solar power converter among fixed by uncontrolled phase shift controlled full bridge resonant converter unit, so as to all power switches of the full bridge resonant converter unit in any load can reach zero voltage switching, not only can improve light-load efficiency, the scope for efficiency under full load variation of both improvement and helpful.

Abstract: A method includes applying a first amount of heat to a vapor region of a precursor canister, measuring an indication of saturated vapor pressure within the vapor region during the applying the first amount of heat, and applying a second amount of heat to the vapor region of the precursor canister, the second amount of heat being adjusted from the first amount of heat based on the indication of saturated vapor pressure.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate. The semiconductor device structure includes a gate stack positioned over the semiconductor substrate. The gate stack includes a gate dielectric layer and a gate electrode over the gate dielectric layer. The semiconductor device structure includes spacers positioned over first sidewalls of the gate stack. The spacers and the gate stack surround a recess. The semiconductor device structure includes an insulating layer formed over the semiconductor substrate and surrounding the gate stack. The semiconductor device structure includes a cap layer covering the insulating layer, the spacers, and inner walls of the recess.

Abstract: A bidirectional DC-DC converter applies to a charging and discharging system equipped with a battery and especially to power fluctuations arising from the charging and discharging of the battery. The bidirectional DC-DC converter has a first full-bridge switching unit, transformer, resonance unit, second full-bridge switching unit, and frequency change control module. The first full-bridge switching unit connects with a first DC power source. The transformer has a primary side connected to the first switching unit to receive a power from the first DC power source and has a secondary side connected to the second full-bridge switching unit. The resonance unit connects with the transformer's secondary-side winding and receives power to produce resonance. The second full-bridge switching unit connects with a second DC power source. The frequency change control module instructs the switching units to perform bidirectional buck-boost switching and changes the operating frequency to adjust voltage gain.

Abstract: A grid system conducive to enhancement of power supply performance comprises a plurality of signal regulation devices are jointly connected to a load; the signal regulation devices are each connected to a DC/DC conversion circuit and a DC/AC changing circuit through a power modulation module; an input end of the DC/DC conversion circuit receives a power signal provided by a renewable power module, and then the power modulation module performs loop control on the DC/DC conversion circuit and the DC/AC changing circuit in accordance with the power signal, the load, and/or a power state of utility electricity, such that output power of the grid system maintains high stability and low distortion and attains a satisfactory power adjustment rate at a low cost so as to make good use of all power resources and thus enhance the efficiency of overall power utilization of the grid system.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate. The semiconductor device structure includes a gate stack positioned over the semiconductor substrate. The gate stack includes a gate dielectric layer and a gate electrode over the gate dielectric layer. The semiconductor device structure includes spacers positioned over first sidewalls of the gate stack. The spacers and the gate stack surround a recess. The semiconductor device structure includes an insulating layer formed over the semiconductor substrate and surrounding the gate stack. The semiconductor device structure includes a cap layer covering the insulating layer, the spacers, and inner walls of the recess.

Abstract: A system and method for controlling saturated vapor pressure of a precursor material is provided. An embodiment comprises generating a calibration curve and utilizing the calibration curve to control a temperature of the precursor material in order to control its saturated vapor pressure. Alternatively, the calibration curve may be substituted for a real time sensor which can take readings in real time and adjust the temperature and saturated vapor pressure based upon the real time readings.

Abstract: A system and method for conditioning a chamber is disclosed. An embodiment comprises utilizing the deposition chamber to deposit a first layer and conditioning the deposition chamber. The conditioning the deposition chamber can be performed by depositing a heterogeneous material over the first layer. The heterogeneous material can cover and encapsulate the first layer, thereby preventing particles of the first layer from breaking off and potentially landing on a substrate during a subsequent processing run.

Abstract: The automatic locking and releasing structure for a push-pull plug of this invention includes an upper case, a bottom case, a slider and push-buttons. The bottom case is suspended therein with two symmetrically arranged slide tracks that are each provided at the inside thereof with a wedge piece. The opposing sides of the slider are each formed with a resilient retaining arm, and the slider is movably provided between the two slide tracks. The free ends of the resilient retaining arms are movably attached to the push-buttons provided at the outside of the slide tracks. As such, when one manipulates the push-buttons to move along slide slots formed in the upper case and bottom case, the slider may be retracted or extended at the same time thereby subjecting the resilient retaining arms to assume a locking or releasing state with respect to the wedge pieces.

Abstract: A safety easily operable universal adaptor which mainly disposed with a safety device and a set of shutter whereupon a control rod of the safety device is displaced toward the right and left in opposition to an up and down motion of a positioning block and then forcibly limited each plug pin to keep in position so as to enable only single set of the plug pin can be protruded outwardly; the set of shutter is disposed in the inner side of an socket of an adaptor body and then push the shutter away when a plug is inserted therein, so as to insert the socket and electrically connect to a electrically conductive plate therebetween; by virtue of this arrangement, an electrified state is formed between the plug and the plug pin.