Patents by Inventor Ke-Dian WU

Ke-Dian WU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device structure having carrier-trapping layers with different grain sizes
    Patent number: 11063117
    Abstract: Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a supporting substrate. The semiconductor device structure also includes a first carrier-trapping layer covering the supporting substrate. The first carrier-trapping layer is doped with a group-IV dopant. The semiconductor device structure further includes an insulating layer covering the first carrier-trapping layer. In addition, the semiconductor device structure includes a semiconductor substrate over the insulating layer. The semiconductor device structure also includes a transistor. The transistor includes a gate stack over the semiconductor substrate and source and drain structures in the semiconductor substrate.
    Type: Grant
    Filed: April 20, 2017
    Date of Patent: July 13, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yu-Hung Cheng, Yong-En Syu, Kuo-Hwa Tzeng, Ke-Dian Wu, Cheng-Ta Wu, Yeur-Luen Tu, Ming-Che Yang, Wei-Kung Tsai
  • STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE
    Publication number: 20180308928
    Abstract: Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a supporting substrate. The semiconductor device structure also includes a first carrier-trapping layer covering the supporting substrate. The first carrier-trapping layer is doped with a group-IV dopant. The semiconductor device structure further includes an insulating layer covering the first carrier-trapping layer. In addition, the semiconductor device structure includes a semiconductor substrate over the insulating layer. The semiconductor device structure also includes a transistor. The transistor includes a gate stack over the semiconductor substrate and source and drain structures in the semiconductor substrate.
    Type: Application
    Filed: April 20, 2017
    Publication date: October 25, 2018
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yu-Hung CHENG, Yong-En SYU, Kuo-Hwa TZENG, Ke-Dian WU, Cheng-Ta WU, Yeur-Luen TU, Ming-Che YANG, Wei-Kung TSAI