Abstract: A structure of transferring dies includes an oxide layer supporting feature, multiple dies, a bonding feature, a supporting wafer, and a spacer. The oxide layer supporting feature includes multiple repeating units. Each repeating unit has a die setting region and a peripheral region. The die setting region of one repeating unit is separated from the peripheral region of another adjacent repeating unit. The die is disposed on the die setting region and the bonding feature is disposed on the peripheral region of the oxide layer supporting feature. The supporting wafer is disposed under the oxide layer supporting feature and separated from the die and the bonding feature by a gap. The spacer is disposed between the bonding feature and the supporting wafer, and bonded to the bonding feature.