Abstract: A driving device includes a first current source, a second current source, a first common-mode current elimination (CMCE) circuit, a second common-mode current elimination (CMCE) circuit, a current-to-voltage converter, and a first comparator. The current sources provide constant currents. The current-to-voltage converter includes a first current mirror and a second current mirror. The control terminal of the first current mirror is coupled to the second CMCE circuit. The control terminal of the second current mirror is coupled to the first CMCE circuit. The first current mirror and the second current mirror receive the constant currents, common-mode currents, and differential currents, thereby controlling the first CMCE circuit and the second CMCE circuit to generate a voltage difference that excludes a common-mode voltage corresponding to the common-mode currents. The first comparator receives the voltage difference to drive a field-effect transistor.

Abstract: An apparatus includes a capacitive device configured to provide bias power for a high-side switch, a gate drive path having variable resistance connected between the capacitive device and a gate of the high-side switch, wherein the gate drive path having variable resistance is of a first resistance value in response to a turn-on of the high-side switch, and the gate drive path having variable resistance is of a second resistance value in response to a turn-off of the high-side switch, and wherein the second resistance value is greater than the first resistance value, and a control switch connected between the gate of the high-side switch and ground.

Abstract: A driving method for a multiple frequency coupling generator is provided. The method includes: in normal operations, interpreting an input digital control signal transmitted from a digital signal processor into an interpreted digital control signal; interpreting the interpreted digital control signal into a plurality of magnetic coupling signals by a magnetic coupling switch circuit; performing signal recovery and differential delay on the magnetic coupling signals by an interlocking circuit for reducing time difference and signal loss of the magnetic coupling signals; and when the interlocking circuit determines that the magnetic coupling signals have substantially no time difference and no signal loss, transforming the magnetic coupling signals into a first driving signal and a second driving signal by a switch circuit, a driver circuit and an output pad group to drive a backend driving loop.

Abstract: A digital envelope tracking (DET) supply modulator is provided. The DET supply modulator includes a switching converter, a dynamic switched-capacitor circuit and a digital control circuit. The switching converter converts an input supply voltage into an output envelope tracking (ET) voltage according to a first control signal. The dynamic switched-capacitor circuit outputs multiple supplement voltages for supplementing alternating current (AC) components of the output ET voltage by multiple stages. More particularly, the dynamic switched-capacitor circuit comprises multiple switched-capacitor cells and a selection circuit, wherein the selection circuit is coupled to the multiple switched-capacitor cells. In detail, the multiple switched-capacitor cells generate the multiple supplement voltages, respectively, and the selection circuit controls switching of each of the multiple switched-capacitor cells according to a second control signal.

Abstract: The invention uses the control circuit formed on the silicon wafer to detect the leakage current of transistor formed on the depletion mode GaN wafer and then adjust the gate voltage of the depletion mode GaN transistor according to the detected leakage current. Essentially, the gate voltage is reduced or viewed as made more negative when the detected leakage current is larger a specific value. Thus, the gate voltage can be gradually adjusted to approach a specific threshold voltage that right block the leakage current. In other words, by making the gate voltage more negative when non-zero leakage current is detected and even by making the gate voltage more positive when zero leakage current is detected, the depletion mode GaN transistor can be adjusted to have an acceptable or even zero leakage current, a high reaction rate and an optimized efficiency.

Abstract: An apparatus includes a capacitive device configured to provide bias power for a high-side switch, a gate drive path having variable resistance connected between the capacitive device and a gate of the high-side switch, wherein the gate drive path having variable resistance is of a first resistance value in response to a turn-on of the high-side switch, and the gate drive path having variable resistance is of a second resistance value in response to a turn-off of the high-side switch, and wherein the second resistance value is greater than the first resistance value, and a control switch connected between the gate of the high-side switch and ground.

Abstract: A driving method for a multiple frequency coupling generator is provided. The method includes: in normal operations, interpreting an input digital control signal transmitted from a digital signal processor into an interpreted digital control signal; interpreting the interpreted digital control signal into a plurality of magnetic coupling signals by a magnetic coupling switch circuit; performing signal recovery and differential delay on the magnetic coupling signals by an interlocking circuit for reducing time difference and signal loss of the magnetic coupling signals; and when the interlocking circuit determines that the magnetic coupling signals have substantially no time difference and no signal loss, transforming the magnetic coupling signals into a first driving signal and a second driving signal by a switch circuit, a driver circuit and an output pad group to drive a backend driving loop.

Abstract: The invention uses the control circuit formed on the silicon wafer to detect the leakage current of transistor formed on the depletion mode GaN wafer and then adjust the gate voltage of the depletion mode GaN transistor according to the detected leakage current. Essentially, the gate voltage is reduced or viewed as made more negative when the detected leakage current is larger a specific value. Thus, the gate voltage can be gradually adjusted to approach a specific threshold voltage that right block the leakage current. In other words, by making the gate voltage more negative when non-zero leakage current is detected and even by making the gate voltage more positive when zero leakage current is detected, the depletion mode GaN transistor can be adjusted to have an acceptable or even zero leakage current, a high reaction rate and an optimized efficiency.

Abstract: An apparatus includes a capacitive device configured to provide bias power for a high-side switch, a gate drive path having variable resistance connected between the capacitive device and a gate of the high-side switch, wherein the gate drive path having variable resistance is of a first resistance value in response to a turn-on of the high-side switch, and the gate drive path having variable resistance is of a second resistance value in response to a turn-off of the high-side switch, and wherein the second resistance value is greater than the first resistance value, and a control switch connected between the gate of the high-side switch and ground.

Abstract: A switched-capacitor power stage includes a first sub-power stage. The first sub-power stage includes a first inductor, a first high switch, a first low switch, and a first set of switched-capacitor networks. The first inductor is coupled to an input terminal. The first high switch is coupled between the first inductor and an output terminal. The first low switch is coupled between the first inductor and a first transition node. The first set of switched-capacitor networks is coupled between the first transition node and the output terminal.

Abstract: A switched-capacitor power stage includes a first sub-power stage. The first sub-power stage includes a first inductor, a first high switch, a first low switch, and a first set of switched-capacitor networks. The first inductor is coupled to an input terminal. The first high switch is coupled between the first inductor and an output terminal. The first low switch is coupled between the first inductor and a first transition node. The first set of switched-capacitor networks is coupled between the first transition node and the output terminal.

Abstract: A radio frequency rectifier circuit including a rectifier circuit and a controller circuit is provided. The rectifier circuit receives a radio frequency signal and converts the radio frequency signal into a direct-current voltage serving as an output voltage. The rectifier circuit includes multiple power stages and multiple switch circuits. Each of the switch circuits is coupled between two of the power stages. The controller circuit is coupled to the rectifier circuit. The controller circuit outputs a control signal to control a conduction number of the switch circuits according to a value of the output voltage.

Abstract: An apparatus includes a capacitive device configured to provide bias power for a high-side switch, a gate drive path having variable resistance connected between the capacitive device and a gate of the high-side switch, wherein the gate drive path having variable resistance is of a first resistance value in response to a turn-on of the high-side switch, and the gate drive path having variable resistance is of a second resistance value in response to a turn-off of the high-side switch, and wherein the second resistance value is greater than the first resistance value, and a control switch connected between the gate of the high-side switch and ground.

Abstract: An apparatus includes a capacitive device configured to provide bias power for a high-side switch, a gate drive path having variable resistance connected between the capacitive device and a gate of the high-side switch, wherein the gate drive path having variable resistance is of a first resistance value in response to a turn-on of the high-side switch, and the gate drive path having variable resistance is of a second resistance value in response to a turn-off of the high-side switch, and wherein the second resistance value is greater than the first resistance value, and a control switch connected between the gate of the high-side switch and ground.

Abstract: An apparatus includes a capacitive device configured to provide bias power for a high-side switch, a gate drive path having variable resistance connected between the capacitive device and a gate of the high-side switch, wherein the gate drive path having variable resistance is of a first resistance value in response to a turn-on of the high-side switch, and the gate drive path having variable resistance is of a second resistance value in response to a turn-off of the high-side switch, and wherein the second resistance value is greater than the first resistance value, and a control switch connected between the gate of the high-side switch and ground.

Abstract: A wireless power transmitter circuit includes a power converter circuit, a power inverter circuit, an LC circuit, a resonant transmitter circuit, and a control circuit. The LC circuit includes an inductor and a capacitor, wherein an reactance of the LC circuit is substantially zero. The LC circuit is for converting the AC output current to a coil current. The resonant transmitter circuit includes at least one transmitter coil and a variable capacitor circuit, wherein the coil current flows through the at least one transmitter coil to generate a resonant wireless power. The control circuit generates a capacitance adjustment signal for adjusting an impedance of the variable capacitor circuit, such that the resonant transmitter circuit substantially operates in an impedance matched condition.

Abstract: An envelope-tracking power supply modulator (ETSM) supplies power to a radio frequency power amplifier (RFPA) of a radio frequency (RF) circuit according to a baseband envelope signal. The ETSM includes a linear amplifier, a capacitor, a single inductor multiple output (SIMO) switch-mode converter, and a controller. The linear amplifier receives the baseband envelope signal, and has its output terminal coupled to a power input of the RFPA. One terminal of the capacitor is coupled to a reference voltage, and the other terminal is coupled to a power input of the linear amplifier. The SIMO switch-mode converter includes two output terminals. One of the output terminals is coupled to the capacitor and the power input of the linear amplifier, and the other of the output terminals is coupled to the output terminal of the linear amplifier and the power input of the RFPA. The controller controls the SUMO switch-mode converter.

Abstract: A wireless power transmitter circuit includes a power converter circuit, a power inverter circuit, an LC circuit, a resonant transmitter circuit, and a control circuit. The LC circuit includes an inductor and a capacitor, wherein an reactance of the LC circuit is substantially zero. The LC circuit is for converting the AC output current to a coil current. The resonant transmitter circuit includes at least one transmitter coil and a variable capacitor circuit, wherein the coil current flows through the at least one transmitter coil to generate a resonant wireless power. The control circuit generates a capacitance adjustment signal for adjusting an impedance of the variable capacitor circuit, such that the resonant transmitter circuit substantially operates in an impedance matched condition.

Abstract: An envelope-tracking power supply modulator (ETSM) supplies power to a radio frequency power amplifier (RFPA) of a radio frequency (RF) circuit according to a baseband envelope signal. The ETSM includes a linear amplifier, a capacitor, a single inductor multiple output (SIMO) switch-mode converter, and a controller. The linear amplifier receives the baseband envelope signal, and has its output terminal coupled to a power input of the RFPA. One terminal of the capacitor is coupled to a reference voltage, and the other terminal is coupled to a power input of the linear amplifier. The SIMO switch-mode converter includes two output terminals. One of the output terminals is coupled to the capacitor and the power input of the linear amplifier, and the other of the output terminals is coupled to the output terminal of the linear amplifier and the power input of the RFPA. The controller controls the SUMO switch-mode converter.

Abstract: A self-excited power conversion circuit for secondary side control output power includes a comparator unit and a transistor installed directly in a secondary side output module, and the comparator unit is electrically coupled to at least one load, and the transistor is electrically coupled between to a conversion module of the circuit and the load. The comparator unit is provided for adjusting the duty cycle of the transistor after detecting the amount of energy outputted from the conversion module to the load from, so as to adjust the amount of energy actually received by the load to achieve a constant power effect.