Abstract: A signal receiving circuit of a satellite receiver is disclosed. The satellite receiver comprises at least a first antenna and the signal receiving circuit is adapted to be electrically connected with a digital signal converting device. The signal receiving circuit comprises an amplifier module and a signal processing and power supply unit. The amplifier module is electrically connected with at least a first antenna to receive an antenna signal. The signal processing and power supply unit is electrically connected with the amplifier module to down convert the antenna signal and transmit the antenna signal to the digital signal converting device. The signal processing and power supply unit comprises a charge pump, which receives the output signal of the digital signal converting device and provides at least a driving power for the signal receiving circuit.

Abstract: A manufacturing method for antenna switching circuit includes the following steps of: providing a GaAs wafer, which includes a capping layer; disposing an isolation layer to the GaAs wafer for forming a device area; and disposing a gate metal on the capping layer within the device area, wherein an interface between the gate metal and the capping layer forms a Schottky contact, and the Schottky contact is parallel connected with an impedance. The present invention also discloses a semiconductor structure for antenna switching circuit.

Abstract: A switching circuit for an antenna includes a first switching unit, a second switching unit, a third switching unit, a fourth switching unit, a first clamping unit and a second clamping unit. The first clamping unit is coupled to the first switching unit and the fourth switching unit. The first clamping unit includes a first clamping device and a first resistor, which are connected in parallel. The second clamping unit is coupled to the second switching unit and the third switching unit. The second clamping unit includes a second clamping device and a second resistor, which are connected in parallel.

Abstract: A manufacturing method for antenna switching circuit includes the following steps of: providing a GaAs wafer, which includes a capping layer; disposing an isolation layer to the GaAs wafer for forming a device area; and disposing a gate metal on the capping layer within the device area, wherein an interface between the gate metal and the capping layer forms a Schottky contact, and the Schottky contact is parallel connected with an impedance. The present invention also discloses a semiconductor structure for antenna switching circuit.

Abstract: A silicon-on-insulator device structure having a silicon-on-insulator substrate, a transistor and a control transistor is provided. The transistor and the control transistor are disposed on the silicon-on-insulator substrate. The transistor and the control transistor share a common source region. The drain region of the transistor is electrically connected to the main body of the transistor. By forming of a control transistor between the source terminal and the main body of the transistor and switching the control transistor on or off on demand, the silicon-on-insulator device embodies the advantages of both floating-body effect and body-tied characteristic.

Abstract: A silicon-on-insulator device structure having a silicon-on-insulator substrate, a transistor and a control transistor is provided. The transistor and the control transistor are disposed on the silicon-on-insulator substrate. The transistor and the control transistor share a common source region. The drain region of the transistor is electrically connected to the main body of the transistor. By forming of a control transistor between the source terminal and the main body of the transistor and switching the control transistor on or off on demand, the silicon-on-insulator device embodies the advantages of both floating-body effect and body-tied characteristic.

Abstract: A silicon-on-insulator device structure having a silicon-on-insulator substrate, a transistor and a control transistor is provided. The transistor and the control transistor are disposed on the silicon-on-insulator substrate. The transistor and the control transistor share a common source region. The drain region of the transistor is electrically connected to the main body of the transistor. By forming of a control transistor between the source terminal and the main body of the transistor and switching the control transistor on or off on demand, the silicon-on-insulator device embodies the advantages of both floating-body effect and body-tied characteristic.

Abstract: A silicon-on-insulator device structure having a silicon-on-insulator substrate, a transistor and a control transistor is provided. The transistor and the control transistor are disposed on the silicon-on-insulator substrate. The transistor and the control transistor share a common source region. The drain region of the transistor is electrically connected to the main body of the transistor. By forming of a control transistor between the source terminal and the main body of the transistor and switching the control transistor on or off on demand, the silicon-on-insulator device embodies the advantages of both floating-body effect and body-tied characteristic.