Patents by Inventor Ke Wei
Ke Wei has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12267303Abstract: A structural encoding unit and an error correction decoding unit are divided. The structure encoding unit is divided into input branch processor and an input proxy processor; and the error correction decoding unit is divided into an output routing processor, an output proxy processor, an adjudication branch processor, an adjudication proxy processor and a voting processor. The input branch processor is used for duplicating and distributing messages, the arbitration branch processor is used for duplicating and distributing data, the voting processor is used for performing voting, and the output routing processor is used for selecting an output result from processing results of the output proxy processor according to a voting result of the voting processor.Type: GrantFiled: June 7, 2021Date of Patent: April 1, 2025Assignees: CHINA NATIONAL DIGITAL SWITCHING SYSTEM ENGINEERING & TECHNOLOGICAL R&D CENTER, PURPLE MOUNTAIN LABORATORIESInventors: Lei He, Jiangxing Wu, Qinrang Liu, Ke Song, Shuai Wei, Jianliang Shen, Libo Tan, Yu Li, Quan Ren, Jun Zhou, Min Fu, Weili Zhang, Ruihao Ding, Yiwei Guo
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Publication number: 20250106564Abstract: The present disclosure discloses a speaker comprising a frame, a vibration system, a magnetic circuit system, and a flexible circuit board; the magnetic circuit system comprising a lower clamping plate and a main magnet; the lower clamping plate comprising a lower clamping body, four rectangular through-holes and four first flanges; a portion of the lower clamping body located on the side of the rectangular through-hole away from the main magnet is square to and fixed to the frame and abuts against the flexible circuit board; the speaker further comprising four breathable isolators fixed to the lower clamping body and covering each of the rectangular through-holes. The speaker can be used in an environment with an open cavity in the sound producing cavity, with good leakage effect, low cost and excellent acoustic performance.Type: ApplicationFiled: November 28, 2023Publication date: March 27, 2025Inventors: Zhaoyu Yin, Ke Li, Wei Wei, Zhizhu Chen
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Patent number: 12260098Abstract: An apparatus can include memory devices and a memory controller coupled to the memory devices via memory channels. The memory channels can disable a first memory channel associated with a first memory die in a respective memory chip of a memory device and perform a memory operation via a second memory channel involving a second memory die in the respective memory chip.Type: GrantFiled: September 14, 2022Date of Patent: March 25, 2025Assignee: Micron Technology, Inc.Inventors: Yang Lu, Yu-Sheng Hsu, Kang-Yong Kim, Ke Wei Chan
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Publication number: 20250095906Abstract: A transformer structure can include: a substrate encapsulating at least two windings that are isolated from each other, where each winding includes a coil body and lead-out terminals coupled to the coil body; and a magnetic encapsulation body encapsulating at least one side of the substrate, where the magnetic encapsulation body includes an insulating main material and magnetic particles dispersed in the insulating main material.Type: ApplicationFiled: September 16, 2024Publication date: March 20, 2025Inventors: Ke Dai, Jian Wei, Jiajia Yan
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Publication number: 20250087639Abstract: A method includes forming first integrated circuits on a front side of a semiconductor substrate of a first device die, forming a trench capacitor extending from a backside of the semiconductor substrate into the semiconductor substrate, and forming a first through-via and a second through-via penetrating through the semiconductor substrate. The trench capacitor is electrically coupled between the first through-via and the second through-via. A second device die is bonded to the first die. The second device die includes second integrated circuits, and power nodes of the second integrated circuits are electrically coupled to the first through-via and the second through-via.Type: ApplicationFiled: January 2, 2024Publication date: March 13, 2025Inventors: Ke-Gang Wen, Yu-Bey Wu, Tsung-Chieh Hsiao, Liang-Wei Wang, Dian-Hau Chen
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Publication number: 20250079837Abstract: A model prediction-based control method for grid forming of multi-port autonomous reconfigurable solar plants includes: estimating and predicting system parameters by establishing a multi-port autonomous reconfigurable solar plant and a dynamic model of a synchronous generator model; converting an objective function into an unconstrained optimization problem, using Newton's method to achieve minimum computational burden within each calculation time step to find a solution in real time for obtaining an optimal angular frequency; based on results of the optimal angular frequency, updating an output voltage and a dq-axis current of the multi-port autonomous reconfigurable solar plant, and changing an arm modulation index of the plant, thereby realizing the plant's inertia and primary frequency modulation support. The model prediction-based control method provided by the present invention achieves rapid prediction during operation and improves frequency response, rapidity and system stability.Type: ApplicationFiled: November 6, 2023Publication date: March 6, 2025Inventors: Kenan CAO, Lei CUI, Jiebei ZHU, Chenhui NIU, Feng LI, Jie ZHU, Jiahao SHI, Dan WEI, Ke ZHANG, Xiaoyu ZHOU, Jiaping QIAN, Xueke ZHU, Xiaoyi LIU
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Publication number: 20250070064Abstract: An embodiment is a device including a first die and a substrate including a first surface and a second surface opposite the first surface. The device also includes an active device on the first surface of the substrate. The device also includes a first interconnect structure on the first surface of the substrate. The device also includes a through substrate via extending through the first interconnect structure and the substrate to the second surface of the substrate, the through substrate via being electrically coupled to metallization patterns in the first interconnect structure. The device also includes one or more material-filled trench structures extending from the second surface of the substrate into the substrate, the one or more material-filled trench structures being electrically isolated from the through substrate via.Type: ApplicationFiled: January 3, 2024Publication date: February 27, 2025Inventors: Ke-Gang Wen, Yu-Bey Wu, Liang-Wei Wang, Hsin-Feng Chen, Tsung-Chieh Hsiao, Chih Chuan Su, Dian-Hau Chen
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Publication number: 20250070052Abstract: A method includes forming first nanostructures over a first region of a substrate; forming second nanostructures over a second region of the substrate; forming first gate structures around the first nanostructures; replacing the second nanostructures with isolation regions; and forming a seal ring over the substrate, wherein the seal ring is between the first region and the second region.Type: ApplicationFiled: October 24, 2023Publication date: February 27, 2025Inventors: Ke-Gang Wen, Chih Hsin Yang, Kuan-Hsun Wang, Tsung-Chieh Hsiao, Liang-Wei Wang, Dian-Hau Chen
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Patent number: 12232301Abstract: A cooling system includes a control device, a chiller unit, a cooling tower, and an ice water storage tank. The chiller unit, the ice water storage tank, and the data center are coupled through a pipeline. According to a first condition, the chiller unit provides cooling water to the data center. According to a second condition, the chiller unit provides cooling water to the data center and the ice water storage tank. According to a third condition, the ice water storage tank provides cooling water to the data center and the chiller unit refills cooling water to the ice water storage tank, and heated water of the data center flows to the chiller unit.Type: GrantFiled: January 14, 2021Date of Patent: February 18, 2025Assignee: Fulian Precision Electronics (Tianjin) Co., LTD.Inventors: Yen-Chun Fu, Tze-Chern Mao, Chao-Ke Wei, Chih-Hung Chang
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Patent number: 12225573Abstract: Methods, systems, and devices for determining priority of transport channels and transmission signals. Some embodiments can be used in wireless communication embodiments in which multiple uplink transport channels or transmission signals need to be concurrent transmitted, such as in dual-connectivity mode, where the determined priority can be used to preferentially allocate uplink transmit power to higher priority transport channels and transmission signals.Type: GrantFiled: July 29, 2021Date of Patent: February 11, 2025Assignee: ZTE CorporationInventors: Chenchen Zhang, Peng Hao, Xingguang Wei, Ke Yao
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Publication number: 20250046678Abstract: A method includes receiving a workpiece including a device layer disposed on a frontside of the workpiece, forming a frontside interconnect structure over the device layer, attaching a carrier substrate over the frontside interconnect structure, and etching from a backside of the workpiece to form first trenches and second trenches. The first trenches extend partially into the carrier substrate for a distance less than the second trenches. The method also includes forming a plurality of first conductive features in the first trenches and a plurality of second conductive features in the second trenches, forming a backside interconnect structure covering the first conductive features and the second conductive features, and thinning the carrier substrate from the frontside of the workpiece to expose the second conductive features. The first conductive features remain partially embedded in the carrier substrate.Type: ApplicationFiled: January 8, 2024Publication date: February 6, 2025Inventors: Tsung-Chieh Hsiao, Ke-Gang Wen, Yu-Bey Wu, Liang-Wei Wang
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Publication number: 20250046756Abstract: Interconnect structures for front-to-front stacked chips/dies and methods of fabrication thereof are disclosed herein. An exemplary system on integrated circuit (SoIC) includes a first die that is front-to-front bonded with a second die, for example, by bonding a first topmost metallization layer of a first frontside multilayer interconnect of the first die to a second topmost metallization layer of a second frontside multilayer interconnect of the second die. A through via extends partially through the first frontside multilayer interconnect of the first die, through a device layer of the first die, through a backside power rail of the first die, and through a carrier substrate. The backside power rail is between the carrier substrate and the device layer, and the backside power rail may be a portion of a backside multilayer interconnect of the first die. The through via may be connected to a redistribution layer (RDL) structure.Type: ApplicationFiled: January 4, 2024Publication date: February 6, 2025Inventors: Tsung-Chieh Hsiao, Yi Ling Liu, Ke-Gang Wen, Yu-Bey Wu, Liang-Wei Wang
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Publication number: 20250046667Abstract: A method includes forming a device die including forming integrated circuits on a semiconductor substrate; and forming a thermally conductive pillar extending into the semiconductor substrate. A cooling medium is attached over and contacting the semiconductor substrate to form a package, wherein the cooling medium is thermally coupled to the thermally conductive pillar.Type: ApplicationFiled: October 6, 2023Publication date: February 6, 2025Inventors: Tsung-Chieh Hsiao, Ke-Gang Wen, Chih-Pin Chiu, Hsin-Feng Chen, Yu-Bey Wu, Liang-Wei Wang, Dian-Hau Chen
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Publication number: 20250038074Abstract: A method includes forming a first multilayer interconnect structure over a first side of a device layer, forming a first portion of a second multilayer interconnect structure under a second side of the device layer, forming a trench that extends through the second dielectric layer, the device layer, and the first dielectric layer, forming a conductive structure in the trench, and forming a second portion of the second multilayer interconnect structure under the first portion of the second multilayer interconnect structure. The second portion of the second multilayer interconnect structure includes patterned metal layers disposed in a third dielectric layer, and wherein one or more of the patterned metal layers are in electrical connection with the conductive structure.Type: ApplicationFiled: December 1, 2023Publication date: January 30, 2025Inventors: Tsung-Chieh Hsiao, Yi Ling Liu, Yun-Sheng Li, Ke-Gang Wen, Yu-Bey Wu, Liang-Wei Wang, Dian-Hau Chen
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Patent number: 12210981Abstract: An approach is provided in which a method, system, and program product analyze, while training a machine learning model, a set of first data transformation operators in a first data preparation pipeline that generates a plurality of constructed features from a set of training data. The method, system, and program product create a plurality of second data preparation pipelines from the first data preparation pipeline, wherein the set of first data transformation operators are converted to a set of second data transformation operators and each assigned to one of the plurality of second data preparation pipelines. The method, system, and program product deploy the plurality of second data preparation pipelines to a runtime system.Type: GrantFiled: March 31, 2021Date of Patent: January 28, 2025Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Ke Wei Wei, Hong Min, Shuang Ys Yu, Qi Zhang, Meichi Maggie Lin, Peter Bendel, Heng Liu
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Patent number: 12200915Abstract: A temperature control device includes a temperature sensor configured to detect a temperature within a server. When the temperature in the server is below a preset temperature, the control unit controls an interior heating assembly to heat the server, and closes a ventilation assembly to retain heat within the server. When the temperature in the server has reached the preset temperature, the control unit controls the heating assembly to stop the internal heating, and controls the ventilation assembly to open, to allow dissipation of the heat from the server.Type: GrantFiled: November 30, 2022Date of Patent: January 14, 2025Assignee: Fulian Precision Electronics (Tianjin) Co., LTD.Inventors: Tze-Chern Mao, Li-Wen Chang, Yen-Chun Fu, Chih-Hung Chang, Yao-Ting Chang, Chao-Ke Wei
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Patent number: 12159060Abstract: The present disclosure relates to a data writing method and apparatus of a NAND flash, and a storage medium. The method includes: for each channel in the NAND flash, pairing all logic units, namely LUNs, in the channel so that each LUN pair includes at least two LUNs; and for each LUN pair, sequentially writing data to one same page in a plurality of pages corresponding to a program mode included in each word line of each LUN in the LUN pair, and after completing data writing to the same page of the word line of all the LUNs in the LUN pair, sequentially writing data to a next same page in the plurality of pages of the word line of each LUN in the LUN pair, until the data writing is sequentially performed on a last same page in the plurality of pages of the word line of each LUN in the LUN pair. Therefore, the transmission efficiency of a NAND bus can be improved, and the data writing performance of the NAND flash can be improved.Type: GrantFiled: June 2, 2022Date of Patent: December 3, 2024Assignee: INNOGRIT TECHNOLOGIES CO., LTD.Inventors: Tao Wei, Zhengtian Feng, Ke Wei
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Publication number: 20240386181Abstract: A method of generating an IC layout diagram includes receiving the IC layout diagram including an active region, a gate region extending across the active region from a first active region edge to a second active region edge, and a gate via positioned at a location along the gate region between the first and second active region edges, calculating a gate resistance value based on the location and first and second active region edges, based on the resistance value, modifying the IC layout diagram by changing the location of the gate via along the gate region and/or adding another gate via positioned at another location along the gate region, and storing the modified IC layout diagram in a storage device.Type: ApplicationFiled: July 30, 2024Publication date: November 21, 2024Inventors: Ke-Ying SU, Ke-Wei SU, Keng-Hua KUO, Lester CHANG
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Publication number: 20240377352Abstract: Various embodiments of the present application are directed towards an ion-sensitive field-effect transistor for enhanced sensitivity. In some embodiments, a substrate comprises a pair of first source/drain regions and a pair of second source/drain regions. Further, a first gate electrode and a second gate electrode underlie the substrate. The first gate electrode is laterally between the first source/drain regions, and the second gate electrode is laterally between the second source/drain regions. An interconnect structure underlies the substrate and defines conductive paths electrically shorting the second source/drain regions and the second gate electrode together. A passivation layer is over the substrate and defines a first well and a second well. The first and second wells respectively overlie the first and second gate electrodes, and a sensing layer lines the substrate in the first and second wells. In some embodiments, sensing probes are in the first well, but not the second well.Type: ApplicationFiled: July 23, 2024Publication date: November 14, 2024Inventors: Katherine H. Chiang, Jui-Cheng Huang, Ke-Wei Su, Tung-Tsun Chen, Wei Lee, Pei-Wen Liu
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Patent number: 12141681Abstract: A one-shot neural architecture search method referred to as MergeNAS by merging different types of convolutions into a single operation. This mergence approach reduces the search cost to roughly half a GPU-day as well as alleviates the over-fitting problem caused by a traditional differentiable architecture search (DARTS) approach by reducing the number of redundant parameters.Type: GrantFiled: December 21, 2020Date of Patent: November 12, 2024Assignee: International Business Machines CorporationInventors: Xiaoxing Wang, Chao Xue, Yonggang Hu, Ke Wei Sun