Abstract: A controlling method for semiconductor process auxiliary apparatus, a control assembly and a manufacturing system are provided. The controlling method includes the following steps. At least one manufacturing parameter of a semiconductor manufacturing processing apparatus are obtained. An energy adjusting signal is generated according to the manufacturing parameter. An auxiliary apparatus controlling signal is generated according to the energy adjusting signal. The semiconductor process auxiliary apparatus is controlled according to the semiconductor auxiliary apparatus controlling signal.

Abstract: The present invention relates to a polybutylene terephthalate composition, and an article derived from the polybutylene terephthalate composition comprising as component (A) polybutylene terephthalate (PBT) resin, as component (B) vinyl aromatic-based polymer comprising units which are derived from vinyl aromatic monomers, and as component (C) reinforcement agent.

Abstract: Prior to reaction in an isomerization unit, the feed may be purified by contact with a composition comprising an alumina based catalyst including Group I or Group II cations or combinations thereof in a range from about 0 wt % to about 20 wt % Group I or Group II cations. In some embodiments, the alumina based catalyst has one or more of the following properties; pore volume in pores of less than 70 ? pore diameter of less than about 15% of Total Pore Volume: a pore volume in pores of greater than 350 ? pore diameter of less than 10% of Total Pore Volume; a median pore diameter by volume of less than 120 ?; a water pore volume of less than 1.10 cc/g;: and a surface area of greater than 160 m2/g.

Abstract: A cooling method for controlling a cooling system to cool a data center, the cooling system includes a chiller unit, a cooling tower, and at least one cooling water storage tank, the method includes determining whether the cooling system is under a first condition, a second condition, or a third condition; when the cooling system is under the first condition, controlling the chiller unit to provide cooling water to the data center; when the cooling system is under the second condition, controlling the chiller unit to provide cooling water to the data center and the at least one cooling water storage tank; and when the cooling system is under the third condition, controlling the at least one cooling water storage tank to provide cooling water to the data center and the chiller unit to refill cooling water to the at least one cooling water storage tank.

Abstract: The present disclosure relates to the technical field of semiconductors. Disclosed is a multi-layer semiconductor material structure and a preparation method thereof, solving the problems of the existing semiconductor materials that have poor heat dissipation, high cost, and cannot be mass-produced. The multi-layer semiconductor material structure includes a highly thermally conductive support substrate and a crystallized device function layer, where the device function layer is provided on the highly thermally conductive support substrate, and has a single-crystal surface layer.

Abstract: Disclosed are a super-resolution imaging system (1, 41, 51), a super-resolution imaging method, a biological sample identification system (4, 61) and method, a nucleic acid sequencing imaging system (5) and method, and a nucleic acid identification system (6) and method. The super-resolution imaging system (1, 41, 51) includes an illumination system (A) and an imaging system (B). The illumination system (A) outputs excitation light to irradiate a biological sample to generate excited light, and the imaging system (B) collects and records the excited light to generate an excited light image. The illumination system (A) includes an excitation light source (10, 10a) and a structured light generation and modulation device (11, 11a). The excitation light source (10, 10a) outputs the excitation light, and the structured light generation and modulation device (11, 11a) modulates the excitation light into structured light to irradiate the biological sample to generate the excited light.

Abstract: A structural encoding unit and an error correction decoding unit are divided. The structure encoding unit is divided into input branch processor and an input proxy processor; and the error correction decoding unit is divided into an output routing processor, an output proxy processor, an adjudication branch processor, an adjudication proxy processor and a voting processor. The input branch processor is used for duplicating and distributing messages, the arbitration branch processor is used for duplicating and distributing data, the voting processor is used for performing voting, and the output routing processor is used for selecting an output result from processing results of the output proxy processor according to a voting result of the voting processor.

Abstract: The present disclosure discloses a speaker comprising a frame, a vibration system, a magnetic circuit system, and a flexible circuit board; the magnetic circuit system comprising a lower clamping plate and a main magnet; the lower clamping plate comprising a lower clamping body, four rectangular through-holes and four first flanges; a portion of the lower clamping body located on the side of the rectangular through-hole away from the main magnet is square to and fixed to the frame and abuts against the flexible circuit board; the speaker further comprising four breathable isolators fixed to the lower clamping body and covering each of the rectangular through-holes. The speaker can be used in an environment with an open cavity in the sound producing cavity, with good leakage effect, low cost and excellent acoustic performance.

Abstract: An apparatus can include memory devices and a memory controller coupled to the memory devices via memory channels. The memory channels can disable a first memory channel associated with a first memory die in a respective memory chip of a memory device and perform a memory operation via a second memory channel involving a second memory die in the respective memory chip.

Abstract: A transformer structure can include: a substrate encapsulating at least two windings that are isolated from each other, where each winding includes a coil body and lead-out terminals coupled to the coil body; and a magnetic encapsulation body encapsulating at least one side of the substrate, where the magnetic encapsulation body includes an insulating main material and magnetic particles dispersed in the insulating main material.

Abstract: A method includes forming first integrated circuits on a front side of a semiconductor substrate of a first device die, forming a trench capacitor extending from a backside of the semiconductor substrate into the semiconductor substrate, and forming a first through-via and a second through-via penetrating through the semiconductor substrate. The trench capacitor is electrically coupled between the first through-via and the second through-via. A second device die is bonded to the first die. The second device die includes second integrated circuits, and power nodes of the second integrated circuits are electrically coupled to the first through-via and the second through-via.

Abstract: A model prediction-based control method for grid forming of multi-port autonomous reconfigurable solar plants includes: estimating and predicting system parameters by establishing a multi-port autonomous reconfigurable solar plant and a dynamic model of a synchronous generator model; converting an objective function into an unconstrained optimization problem, using Newton's method to achieve minimum computational burden within each calculation time step to find a solution in real time for obtaining an optimal angular frequency; based on results of the optimal angular frequency, updating an output voltage and a dq-axis current of the multi-port autonomous reconfigurable solar plant, and changing an arm modulation index of the plant, thereby realizing the plant's inertia and primary frequency modulation support. The model prediction-based control method provided by the present invention achieves rapid prediction during operation and improves frequency response, rapidity and system stability.

Abstract: An embodiment is a device including a first die and a substrate including a first surface and a second surface opposite the first surface. The device also includes an active device on the first surface of the substrate. The device also includes a first interconnect structure on the first surface of the substrate. The device also includes a through substrate via extending through the first interconnect structure and the substrate to the second surface of the substrate, the through substrate via being electrically coupled to metallization patterns in the first interconnect structure. The device also includes one or more material-filled trench structures extending from the second surface of the substrate into the substrate, the one or more material-filled trench structures being electrically isolated from the through substrate via.

Abstract: A method includes forming first nanostructures over a first region of a substrate; forming second nanostructures over a second region of the substrate; forming first gate structures around the first nanostructures; replacing the second nanostructures with isolation regions; and forming a seal ring over the substrate, wherein the seal ring is between the first region and the second region.

Abstract: A cooling system includes a control device, a chiller unit, a cooling tower, and an ice water storage tank. The chiller unit, the ice water storage tank, and the data center are coupled through a pipeline. According to a first condition, the chiller unit provides cooling water to the data center. According to a second condition, the chiller unit provides cooling water to the data center and the ice water storage tank. According to a third condition, the ice water storage tank provides cooling water to the data center and the chiller unit refills cooling water to the ice water storage tank, and heated water of the data center flows to the chiller unit.

Abstract: Methods, systems, and devices for determining priority of transport channels and transmission signals. Some embodiments can be used in wireless communication embodiments in which multiple uplink transport channels or transmission signals need to be concurrent transmitted, such as in dual-connectivity mode, where the determined priority can be used to preferentially allocate uplink transmit power to higher priority transport channels and transmission signals.

Abstract: A method includes receiving a workpiece including a device layer disposed on a frontside of the workpiece, forming a frontside interconnect structure over the device layer, attaching a carrier substrate over the frontside interconnect structure, and etching from a backside of the workpiece to form first trenches and second trenches. The first trenches extend partially into the carrier substrate for a distance less than the second trenches. The method also includes forming a plurality of first conductive features in the first trenches and a plurality of second conductive features in the second trenches, forming a backside interconnect structure covering the first conductive features and the second conductive features, and thinning the carrier substrate from the frontside of the workpiece to expose the second conductive features. The first conductive features remain partially embedded in the carrier substrate.

Abstract: A method includes forming a device die including forming integrated circuits on a semiconductor substrate; and forming a thermally conductive pillar extending into the semiconductor substrate. A cooling medium is attached over and contacting the semiconductor substrate to form a package, wherein the cooling medium is thermally coupled to the thermally conductive pillar.

Abstract: Interconnect structures for front-to-front stacked chips/dies and methods of fabrication thereof are disclosed herein. An exemplary system on integrated circuit (SoIC) includes a first die that is front-to-front bonded with a second die, for example, by bonding a first topmost metallization layer of a first frontside multilayer interconnect of the first die to a second topmost metallization layer of a second frontside multilayer interconnect of the second die. A through via extends partially through the first frontside multilayer interconnect of the first die, through a device layer of the first die, through a backside power rail of the first die, and through a carrier substrate. The backside power rail is between the carrier substrate and the device layer, and the backside power rail may be a portion of a backside multilayer interconnect of the first die. The through via may be connected to a redistribution layer (RDL) structure.

Abstract: A method includes forming a first multilayer interconnect structure over a first side of a device layer, forming a first portion of a second multilayer interconnect structure under a second side of the device layer, forming a trench that extends through the second dielectric layer, the device layer, and the first dielectric layer, forming a conductive structure in the trench, and forming a second portion of the second multilayer interconnect structure under the first portion of the second multilayer interconnect structure. The second portion of the second multilayer interconnect structure includes patterned metal layers disposed in a third dielectric layer, and wherein one or more of the patterned metal layers are in electrical connection with the conductive structure.