Abstract: Disclosed is an apparatus for and method of using an in-system utility stage to provide service functions for wafer tables and other components in the photolithographic system in which the utility stage can access multiple tools without any need to open an enclosure containing the utility stage and the wafer tables and other components thus increasing throughput and decreasing downtime.

Abstract: A method includes treating a burled surface of an object using radiation or heat and setting parameters of the radiation or heat to effectuate a predetermined surface strength, hardness, roughness, coefficient of friction, chemical resistance, wear resistance, and/or corrosion of the burled surface.

Abstract: A method includes treating a burled surface of an object using radiation or heat and setting parameters of the radiation or heat to effectuate a predetermined surface strength, hardness, roughness, coefficient of friction, chemical resistance, wear resistance, and/or corrosion of the burled surface.

Abstract: The invention provides an object holder to hold an object, comprising: a clamp side to clamp the object, wherein the clamp side is electrically conductive, at least one electrode arranged at a distance from the clamp side, and electrically isolated from the clamp side, a controller arranged to provide an electrode voltage to the at least one electrode based on a measured charge signal representative for a charge level of the object holder and/or the object in order to decrease a potential difference between an electrical potential of the clamp side and an electrical potential of the object.

Abstract: Disclosed is an apparatus for and method of using an in-system utility stage to provide service functions for wafer tables and other components in the photolithographic system in which the utility stage can access multiple tools without any need to open an enclosure containing the utility stage and the wafer tables and other components thus increasing throughput and decreasing downtime.

Abstract: Apparatus for and method of removing a contaminant from a working surface of a lithography support such as a reticle or wafer stage in an EUV or a DUV photolithography system in which a base supporting the substrate is provided with a surface profile so as to be thicker towards a middle portion of the base so that when a substrate supported by the base is pressed between the working surface and the base the contaminant is transferred from the working surface to the substrate.

Abstract: Apparatus for and method of removing a contaminant from a working surface of a lithography support such as a reticle or wafer stage in an EUV or a DUV photolithography system in which abase supporting the substrate is provided with a surface profile so as to be thicker towards a middle portion of the base so that when a substrate supported by the base is pressed between the working surface and the base the contaminant is transferred from the working surface to the substrate.

Abstract: Systems, apparatuses, and methods are provided for manufacturing an electrostatic clamp. An example method can include forming a dielectric layer that includes a plurality of burls for supporting an object. The example method can further include forming an electrostatic layer that includes one or more electrodes. The example method can further include generating, using the electrostatic layer, an electrostatic force to electrostatically clamp the object to the plurality of burls in response to an application of one or more voltages to the one or more electrodes. In some aspects, a first magnitude of the electrostatic force in a first region of the dielectric layer can be different than a second magnitude of the electrostatic force in a second region of the dielectric layer. For example, the first magnitude and the second magnitude can be part of a linear, non-linear, or stepped (e.g., multi-level) electrostatic force gradient.

Abstract: Apparatus for and method of removing a contaminant from a working surface of a lithography support such as a reticle or wafer stage in an EUV or a DUV photolithography system in which a cleaning substrate provided with a coating made a selected material and configuration is pressed against the working surface so that the contaminant is transferred from the working surface to the coating.

Abstract: Systems and methods for forming structures (e.g., a plurality of support peaks) on a surface are described. Forming structures on a surface includes masking one or more portions of the surface; removing material from one or more unmasked portions of the surface; and iteratively repeating the masking and removing to reshape the unmasked portions of the surface until the plurality of structures (e.g., support peaks) are formed such that regions of the surface between individual structures (support peaks) have a target characteristic such as a target topography, roughness, etc.

Abstract: Apparatus for and method of removing a contaminant from a working surface of a lithography support such as a reticle or wafer stage in an EUV or a DUV photolithography system in which abase supporting the substrate is provided with a surface profile so as to be thicker towards a middle portion of the base so that when a substrate supported by the base is pressed between the working surface and the base the contaminant is transferred from the working surface to the substrate.

Abstract: Apparatus for and method of removing a contaminant from a working surface of a lithography support such as a reticle or wafer stage in an EUV or a DUV photolithography system in which a cleaning substrate provided with a coating made a selected material and configuration is pressed against the working surface so that the contaminant is transferred from the working surface to the coating.