Abstract: The invention provides methods for introducing co-varying paired nucleic acids into a vector such under separate transcriptional control. An oligonucleotide is synthesized including the paired nucleic acids. The oligonucleotide is then assembled with a spacer nucleic acid encoding a promoter. After assembly the spacer nucleic acid is to one side of the oligonucleotide encoding the paired segments. However, on circularization of the assembled nucleic acid and cleavage between the DNA segments the spacer oligonucleotide and its components now occur between the paired segments. The resulting nucleic acid can now be cloned into a vector with a single step, such that each of the paired nucleic acid segments is linked to its own promoter. The present method can readily be extended to library screening without proportionately increasing the effort.

Abstract: Non-volatile memory cells including complimentary metal-oxide-semiconductor transistors and embedded ferroelectric capacitor and methods of forming the same are described. In one embodiment, the method includes forming on a surface of a substrate a gate level including a gate stack of a MOS transistor, a first dielectric layer overlying the MOS transistor and a first contact extending through the first dielectric layer from a top surface thereof to a diffusion region of the MOS transistor. A local interconnect (LI) layer is deposited over the top surface of the first dielectric layer and the first contact, a ferro stack including a bottom electrode, a top electrode and ferroelectric layer there between deposited over the LI layer, and the ferro stack and the LI layer patterned to form a ferroelectric capacitor and a LI through which the bottom electrode is electrically coupled to the diffusion region of the MOS transistor.

Abstract: The invention provides methods for introducing co-varying paired nucleic acids into a vector such under separate transcriptional control. An oligonucleotide is synthesized including the paired nucleic acids. The oligonucleotide is then assembled with a spacer nucleic acid encoding a promoter. After assembly the spacer nucleic acid is to one side of the oligonucleotide encoding the paired segments. However, on circularization of the assembled nucleic acid and cleavage between the DNA segments the spacer oligonucleotide and its components now occur between the paired segments. The resulting nucleic acid can now be cloned into a vector with a single step, such that each of the paired nucleic acid segments is linked to its own promoter. The present method can readily be extended to library screening without proportionately increasing the effort.

Abstract: Non-volatile memory cells including complimentary metal-oxide-semiconductor transistors and embedded ferroelectric capacitor and methods of forming the same are described. In one embodiment, the method includes forming on a surface of a substrate a gate level including a gate stack of a MOS transistor, a first dielectric layer overlying the MOS transistor and a first contact extending through the first dielectric layer from a top surface thereof to a diffusion region of the MOS transistor. A local interconnect (LI) layer is deposited over the top surface of the first dielectric layer and the first contact, a ferro stack including a bottom electrode, a top electrode and ferroelectric layer there between deposited over the LI layer, and the ferro stack and the LI layer patterned to form a ferroelectric capacitor and a LI through which the bottom electrode is electrically coupled to the diffusion region of the MOS transistor.

Abstract: Compositions and methods are provided for the cell-free synthesis of active reprogramming factor polypeptides. The reprogramming factors may be synthesized as fusion proteins comprising a permeant domain, such as polyarginme. The cell free-synthesis may be conducted at about 25 C in a bacterial cell extract from genetically alterd cells having decreased endogenous protease activity Further, the proteins may comprise a fusion partner which enhances solubility and may be refolded on a column.

Abstract: The invention provides strategies, methods, vectors, reagents, and systems for production of synthetic genes, production of libraries of such genes, and manipulation and characterization of the genes and corresponding encoded polypeptides. In one aspect, the synthetic genes can encode polyketide synthase polypeptides and facilitate production of therapeutically or commercially important polyketide compounds.

Abstract: A semiconductor device comprises two transistors where a gate electrode of one transistor and source or drain of another transistor are located in the same rail. A monolithic three dimensional array contains a plurality of such devices. The transistors in different levels of the array preferably have a different orientation.

Abstract: 2-Desmethyl ansamycins having a structure according to formula I, where R1, R2, R3, R4, R5 and R6 are as defined herein, and other 2-desmethyl ansamycins are useful as antiproliferative agents.

Abstract: A method of making a semiconductor structure includes sealing a gate layer by wet oxidation. The gate layer is on a substrate containing isolation regions. Semiconductor devices prepared from the semiconductor structure exhibits reduced inverse narrow width effects.

Abstract: A semiconductor device comprises two transistors where a gate electrode of one transistor and source or drain of another transistor are located in the same rail. A monolithic three dimensional array contains a plurality of such devices. The transistors in different levels of the array preferably have a different orientation.

Abstract: A semiconductor device comprises two transistors where a gate electrode of one transistor and source or drain of another transistor are located in the same rail. A monolithic three dimensional array contains a plurality of such devices. The transistors in different levels of the array preferably have a different orientation.

Abstract: A semiconductor device comprises two transistors where a gate electrode of one transistor and source or drain of another transistor are located in the same rail. A monolithic three dimensional array contains a plurality of such devices. The transistors in different levels of the array preferably have a different orientation.

Abstract: A method of making a semiconductor structure includes sealing a gate layer by wet oxidation. The gate layer is on a substrate containing isolation regions. Semiconductor devices prepared from the semiconductor structure exhibits reduced inverse narrow width effects.