Abstract: A method for fabricating a semiconductor device includes forming an insulation layer containing an impurity, forming a contact hole by etching the insulation layer, performing a treatment to decrease a concentration of the impurity on a surface of the insulation layer, and rinsing the contact hole.

Abstract: Provided is a method for forming a buried word line in a semiconductor device. The method includes forming a trench by etching a pad layer and a substrate, forming a conductive layer to fill the trench, planarizing the conductive layer until the pad layer is exposed, performing an etch-back process on the planarized conductive layer, and performing an annealing process in an atmosphere of a nitride-based gas after at least one of the forming of the conductive layer, the planarizing of the conductive layer, and the performing of the etch-back process on the planarized conductive layer.

Abstract: A method for fabricating a semiconductor device includes forming an insulation layer containing an impurity, forming a contact hole by etching the insulation layer, performing a treatment to decrease a concentration of the impurity on a surface of the insulation layer, and rinsing the contact hole.

Abstract: Provided is a method for forming a buried word line in a semiconductor device. The method includes forming a trench by etching a pad layer and a substrate, forming a conductive layer to fill the trench, planarizing the conductive layer until the pad layer is exposed, performing an etch-back process on the planarized conductive layer, and performing an annealing process in an atmosphere of a nitride-based gas after at least one of the forming of the conductive layer, the planarizing of the conductive layer, and the performing of the etch-back process on the planarized conductive layer.

Abstract: A method of removing an ion implanted photoresist comprises performing first cleaning a semiconductor substrate having the ion implanted photoresist using hot deionized water to which a megasonic process is applied, first rinsing the semiconductor substrate using cold deionized water, drying the semiconductor substrate, removing the ion implanted photoresist, and second cleaning the semiconductor wafer using an SPM solution.

Abstract: Cleaning solutions for removing photoresist resins remaining on the underlying layer patterns formed by photolithography process using the photoresist patterns as etching mask. The cleaning solution for removing photoresist comprises H2O as solvent, amine compounds, hydrazine hydrate, transition metal-removing material and alkali metal-removing material. Photoresist coated on the top portion of underlying layers can be rapidly and effectively removed by the disclosed cleaning solution. In addition, the cleaning solution is environment-friendly because H2O is used as the solvent, and has little effect on metal layers when underlying layers are formed of metals.

Abstract: The present invention provides a cleaning solution and a method for cleaning a semiconductor device by the same capable of preventing damages on a tungsten layer from the cleaning solution and removing particles. The cleaning solution includes a deionized water-based ammonia solution; a surfactant added to the ammonia solution; and a chelating agent added to the ammonia solution. The method includes the steps of: depositing a photoresist layer on an upper portion of a substrate provided with a conductive layer including at least a tungsten layer; forming a photoresist pattern by patterning the photoresist layer; forming a conductive pattern by etching the conductive layer with use of the photoresist pattern as an etch mask; removing the photoresist pattern; and performing a cleaning process to the substrate provided with the conductive pattern by using a cleaning solution of a deionized water-based ammonia solution added with a surfactant and a chelating agent.

Abstract: Provided is a method for fabricating a capacitor of a semiconductor; and, more particularly, to a method for forming a Ru storage node of a capacitor that can form a stable storage node. The method includes the steps of: a method for forming a ruthenium (Ru) storage node of a semiconductor device, comprising the steps of: etching an insulation layer on a substrate and forming openings; depositing a Ru layer along the profile of the insulation layer and the openings; filling a photoresist in the openings; performing an etching process until the insulation layer between neighboring openings is exposed and forming isolated Ru storage nodes with the Ru layer in the openings; and removing photoresist and polymers with a solution including H2SO4 and H2O2.

Abstract: Provided is a method for fabricating a capacitor of a semiconductor; and, more particularly, to a method for forming a Ru storage node of a capacitor that can form a stable storage node. The method includes the steps of: a method for forming a ruthenium (Ru) storage node of a semiconductor device, comprising the steps of: etching an insulation layer on a substrate and forming openings; depositing a Ru layer along the profile of the insulation layer and the openings; filling a photoresist in the openings; performing an etching process until the insulation layer between neighboring openings is exposed and forming isolated Ru storage nodes with the Ru layer in the openings; and removing photoresist and polymers with a solution including H2SO4 and H2O2.

Abstract: Cleaning solutions for removing photoresist resins remaining on the underlying layer patterns formed by photolithography process using the photoresist patterns as etching mask. The cleaning solution for removing photoresist comprises H2O as solvent, amine compounds, hydrazine hydrate, transition metal-removing material and alkali metal-removing material. Photoresist coated on the top portion of underlying layers can be rapidly and effectively removed by the disclosed cleaning solution. In addition, the cleaning solution is environment-friendly because H2O is used as the solvent, and has little effect on metal layers when underlying layers are formed of metals.