Patents by Inventor Kee-Soo Park

Kee-Soo Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240019311
    Abstract: A substrate temperature measuring device includes a sensor which senses a first amount of light of a first light having a first wavelength, a second amount of light of a second light having a second wavelength, and a third amount of light of a third light having a third wavelength provided from a substrate, a first calculator to calculate a first temperature for the first wavelength, a second temperature for the second wavelength, and a third temperature of the wavelength through the first amount of light, the second amount of light and the third amount of light which are sensed, and a second calculator to calculate emissivity of the substrate and reflected energy of the substrate through the first temperature, the second temperature, and the third temperature, wherein a temperature of the substrate is calculated through the calculated emissivity of the substrate and the reflected energy of the substrate.
    Type: Application
    Filed: May 17, 2023
    Publication date: January 18, 2024
    Inventors: Yeon Tae KIM, Hun Yong PARK, Yihwan KIM, Ji Hoon KIM, Kee Soo PARK
  • Publication number: 20210388501
    Abstract: The present disclosure provides a semiconductor deposition monitoring device comprising a supporting table, a chamber, a lamp, an optical sensor, a conduit, a plurality of sensors in the conduit, and a heat exchanger. The supporting table supports a deposition target wafer on which a deposition material is deposited. The chamber comprises an upper dome and a lower dome. The lamp emits light to the chamber. The optical sensor receives the irradiated light and measures the deposition material formed in the chamber. The conduit has an inlet conduit through which air is injected into the chamber and an outlet conduit through which the air is discharged from the chamber. The plurality of sensors sense information of the air. The sensed information may be used to control the heat exchanger.
    Type: Application
    Filed: January 22, 2021
    Publication date: December 16, 2021
    Inventors: Young Uk CHOI, Yeon Tae KIM, Tae Soon PARK, Kee Soo PARK, Sung-Gyu PARK, Kwang-Hyun YANG, Seung Hun LEE
  • Publication number: 20200194235
    Abstract: An apparatus for manufacturing a semiconductor device includes: a process chamber including a plasma processing space; and a substrate supporter arranged in the process chamber and configured to support a substrate, wherein the substrate supporter includes: a base including a plurality of lift pin holes, each configured to accommodate a lift pin; and a seal band having a ring shape and protruding from the base, the seal band having an inner diameter that is less than a pitch circle diameter of the plurality of lift pin holes.
    Type: Application
    Filed: June 24, 2019
    Publication date: June 18, 2020
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Ki-hwan KIM, Yeon-tae KIM, Kee-soo PARK, Pan-kwi PARK, Jin-ah LEE, Chang-yun LEE, Sung-keun LIM, Min-ho CHOI, Eun-sok CHOI
  • Patent number: 10541182
    Abstract: A method of inspecting a semiconductor substrate includes measuring light intensity of light reflected on the rotating semiconductor substrate, analyzing a frequency distribution of the measured light intensity, and determining a state of the semiconductor substrate by using the frequency distribution. The analyzing of the frequency distribution of the measured light intensity includes extracting a plurality of frequency components corresponding respectively to a plurality of frequencies from the measured light intensity.
    Type: Grant
    Filed: February 2, 2018
    Date of Patent: January 21, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yeon-tae Kim, Do-hyung Kim, Kwang-hyun Yang, Chang-yun Lee, Young-uk Choi, Kee-soo Park, Eun-sok Choi
  • Publication number: 20190096773
    Abstract: A method of inspecting a semiconductor substrate includes measuring light intensity of light reflected on the rotating semiconductor substrate, analyzing a frequency distribution of the measured light intensity, and determining a state of the semiconductor substrate by using the frequency distribution. The analyzing of the frequency distribution of the measured light intensity includes extracting a plurality of frequency components corresponding respectively to a plurality of frequencies from the measured light intensity.
    Type: Application
    Filed: February 2, 2018
    Publication date: March 28, 2019
    Inventors: Yeon-tae KIM, Do-hyung KIM, Kwang-hyun YANG, Chang-yun LEE, Young-uk CHOI, Kee-soo PARK, Eun-sok CHOI
  • Patent number: 10196738
    Abstract: Provided are a deposition process monitoring system capable of detecting an internal state of a chamber in a deposition process, and a method of controlling the deposition process and a method of fabricating a semiconductor device using the system.
    Type: Grant
    Filed: January 16, 2017
    Date of Patent: February 5, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Chang-yun Lee, Ju-hyun Lee, Kee-soo Park, Kyu-hee Han, Seung-hun Lee, Byung-chul Jeon
  • Publication number: 20180010243
    Abstract: Provided are a deposition process monitoring system capable of detecting an internal state of a chamber in a deposition process, and a method of controlling the deposition process and a method of fabricating a semiconductor device using the system.
    Type: Application
    Filed: January 16, 2017
    Publication date: January 11, 2018
    Inventors: Chang-yun Lee, Ju-hyun Lee, Kee-soo Park, Kyu-hee Han, Seung-hun Lee, Byung-chul Jeon
  • Publication number: 20100065215
    Abstract: A plasma generating apparatus including a plurality of plasma source modules. Each plasma source module includes a ferrite core having high magnetic permeability and a plasma channel through which plasma may pass. The plasma generating apparatus may effectively generate and uniformly distribute large-area and high-density plasma without a dielectric window.
    Type: Application
    Filed: September 3, 2009
    Publication date: March 18, 2010
    Inventors: Sang Jean Jeon, Yuri Tolmachev, Vasily Pashkovskiy, Kee Soo Park, Ju Hyun Lee, Su Ho Lee, Chan Yun Lee
  • Patent number: 7335601
    Abstract: A method of manufacture includes processing an object in a chamber and subsequently generating an electrical force of attraction to float contaminants off of a region adjacent the processed object before the object is unloaded from the chamber. The object may be processed with the use of plasma. The plasma is produced by introducing a first gas into the chamber and applying a source power to the first gas. The plasma is extinguished after the object is processed with the use of the plasma. Then, a second gas is introduced into the chamber and a source power is applied to the second gas to generate the electrical force of attraction. At this time, the parameters are controlled so that particle contaminants are readily removed without any influence on the object. Also, the same electrode can be used to apply source power to both the first and second gas. Thus, the operation of removing the particle contaminants is relatively simple.
    Type: Grant
    Filed: October 24, 2005
    Date of Patent: February 26, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jae-Hyun Han, Seung-Ki Chae, Kee-Soo Park
  • Publication number: 20060102588
    Abstract: A method of manufacture includes processing an object in a chamber and subsequently generating an electrical force of attraction to float contaminants off of a region adjacent the processed object before the object is unloaded from the chamber. The object may be processed with the use of plasma. The plasma is produced by introducing a first gas into the chamber and applying a source power to the first gas. The plasma is extinguished after the object is processed with the use of the plasma. Then, a second gas is introduced into the chamber and a source power is applied to the second gas to generate the electrical force of attraction. At this time, the parameters are controlled so that particle contaminants are readily removed without any influence on the object. Also, the same electrode can be used to apply source power to both the first and second gas. Thus, the operation of removing the particle contaminants is relatively simple.
    Type: Application
    Filed: October 24, 2005
    Publication date: May 18, 2006
    Inventors: Jae-Hyun Han, Seung-Ki Chae, Kee-Soo Park