Abstract: A semiconductor processing device according to the present invention includes a process chamber having an inner space in which plasma is generated and a chuck unit disposed in the inner space and supporting a substrate processed by the plasma. The process chamber includes a first chamber portion and a second chamber portion that are opened from each other, and when the first chamber portion and the second chamber portion are closed together, the process chamber is provided with the inner space in which the plasma is generated. When the first chamber portion and the second chamber portion are opened from each other, the chuck unit is exposed to outside.

Abstract: A semiconductor processing device according to the present invention includes a process chamber having an inner space in which plasma is generated and a chuck unit disposed in the inner space and supporting a substrate processed by the plasma. The process chamber includes a first chamber portion and a second chamber portion that are opened from each other, and when the first chamber portion and the second chamber portion are closed together, the process chamber is provided with the inner space in which the plasma is generated. When the first chamber portion and the second chamber portion are opened from each other, the chuck unit is exposed to outside.

Abstract: A rotational antenna and a semiconductor manufacturing device provided with the same are disclosed. The rotational antenna includes a plurality of coils connected in parallel to a high frequency power source and arranged at a regular interval around an axis in a symmetrical relationship with respect to the axis, wherein an electromagnetic field for generating inductively coupled plasma is uniformly formed when the coils are rotated about the axis.

Abstract: A rotational antenna and a semiconductor manufacturing device provided with the same are disclosed. The rotational antenna includes a plurality of coils connected in parallel to a high frequency power source and arranged at a regular interval around an axis in a symmetrical relationship with respect to the axis, wherein an electromagnetic field for generating inductively coupled plasma is uniformly formed when the coils are rotated about the axis.

Abstract: Disclosed herein is a manipulator apparatus. The manipulator apparatus includes a jig unit provided with a manipulator. The jig unit includes a first member provided with the manipulator, a second member configured to move the first member, and a third member configured to move the second member.

Abstract: A plasma device is proposed, the plasma device including a first member including a chuck unit accommodated with an antenna coil or a processed article so rotating as to generate a plasma inside a chamber, and a second member connected with a first harmonics power source, whereby a second harmonics power source that has pulsed a first harmonics power source is applied to the first member in response to the relative rotation of a first terminal of first member and a second terminal of second member.

Abstract: A plasma device is proposed, the plasma device including: a chamber configured to accommodate a processed article; a plasma source configured to generate a plasma applied to the processed article accommodated in the chamber; a chuck unit configured to support the processed article accommodated in the chamber; and a cooling channel formed inside the chamber to allow flowing cooling water.

Abstract: The plasma device is disclosed, the plasma device including a chamber configured to accommodate a substrate, and a plasma source formed at one side of the chamber to excite a reaction gas of the substrate introduced into the chamber in a plasma state, wherein the plasma source moves in parallel with the substrate, whereby the substrate can be uniformly plasma-processed.

Abstract: Disclosed herein is a manipulator apparatus. The manipulator apparatus includes a jig unit provided with a manipulator. The jig unit includes a first member provided with the manipulator, a second member configured to move the first member, and a third member configured to move the second member.

Abstract: A rotational antenna and a semiconductor manufacturing device provided with the same are disclosed. The rotational antenna includes a plurality of coils connected in parallel to a high frequency power source and arranged at a regular interval around an axis in a symmetrical relationship with respect to the axis, wherein an electromagnetic field for generating inductively coupled plasma is uniformly formed when the coils are rotated about the axis.