Patents by Inventor Kee Yun KIM

Kee Yun KIM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250192237
    Abstract: A secondary battery includes: a case having a space therein; an electrode assembly in the space of the case; a cap plate coupled to an upper portion of the case to seal the case; a current collector comprising a terminal connection part between the electrode assembly and the cap plate and an electrode connection part connected to an end of the terminal connection part in a vertical direction and between the electrode assembly and the case; an electrode terminal coupled to the terminal connection part of the current collector by passing through the cap plate; and an insulating member interposed between the cap plate and the electrode assembly, wherein the insulating member comprises an insertion groove in a side surface thereof, and at least a portion of the terminal connection part is inserted into the insertion groove of the insulating member.
    Type: Application
    Filed: May 15, 2024
    Publication date: June 12, 2025
    Inventor: Kee Yun KIM
  • Publication number: 20250167380
    Abstract: A secondary battery includes an electrode assembly, a case configured to accommodate the electrode assembly, a cap plate coupled to the case and including a vent hole formed therein, and a vent pressure control device including a fracture portion that is fracturable by a gas pressure, is rotatably installed on the cap plate, and is variable in position facing the vent hole by rotation thereof.
    Type: Application
    Filed: May 13, 2024
    Publication date: May 22, 2025
    Inventor: Kee Yun KIM
  • Publication number: 20250038283
    Abstract: A secondary battery includes: an electrode assembly including a first electrode plate, a separator, and a second electrode plate; a case in which the electrode assembly is accommodated; a cover part closing an open upper side of the case; and a pressure measurement part detachably installed on the cover part and configured to measure a pressure inside the case.
    Type: Application
    Filed: November 15, 2023
    Publication date: January 30, 2025
    Inventor: Kee Yun KIM
  • Publication number: 20240421448
    Abstract: A secondary battery includes: an electrode assembly including a first electrode tab and a second electrode tab exposed at opposite sides, respectively; a case accommodating the electrode assembly and open on opposite sides; a first cap plate that seals a first side opening of the case; a first current collector that is in contact with and coupled to the first electrode tab exposed at a first side of the electrode assembly, the first current collector including a coupling hole; and a first terminal including a coupling protrusion inserted and coupled to the coupling hole of the first current collector, the first terminal including a portion exposed to an outside of the first cap plate, and an outer diameter of an end of the coupling protrusion is larger than outer diameters of other regions thereof.
    Type: Application
    Filed: November 17, 2023
    Publication date: December 19, 2024
    Inventor: kee Yun KIM
  • Publication number: 20240412802
    Abstract: A method for operating a memory includes determining to perform an error correction operation; determining whether to perform an error correction operation; generating an internal address when the error correction operation is performed; reading data from memory cells that are selected based on the internal address and an error correction code corresponding to the data; performing an error correction operation on the data based on the error correction code to produce an error-corrected data; writing the error-corrected data and an error correction code corresponding to the error-corrected data into the memory cells; determining one or more regions among regions in the memory as a repair-requiring region based on an error detected when the error correction operation is performed; receiving a first command; backing up the data and the error correction code into a redundant region in response to the first command; and repairing the repair-requiring region with the redundant region.
    Type: Application
    Filed: August 19, 2024
    Publication date: December 12, 2024
    Inventors: Kyung Whan KIM, Sun Hwa PARK, Kee Yun KIM, Sung Joo HA, Ah Reum HAN
  • Patent number: 12073902
    Abstract: A method for operating a memory includes determining to perform an error correction operation; determining whether to perform an error correction operation; generating an internal address when the error correction operation is performed; reading data from memory cells that are selected based on the internal address and an error correction code corresponding to the data; performing an error correction operation on the data based on the error correction code to produce an error-corrected data; writing the error-corrected data and an error correction code corresponding to the error-corrected data into the memory cells; determining one or more regions among regions in the memory as a repair-requiring region based on an error detected when the error correction operation is performed; receiving a first command; backing up the data and the error correction code into a redundant region in response to the first command; and repairing the repair-requiring region with the redundant region.
    Type: Grant
    Filed: December 8, 2022
    Date of Patent: August 27, 2024
    Assignee: SK hynix Inc.
    Inventors: Kyung Whan Kim, Sun Hwa Park, Kee Yun Kim, Sung Joo Ha, Ah Reum Han
  • Publication number: 20230116422
    Abstract: A method for operating a memory includes determining to perform an error correction operation; determining whether to perform an error correction operation; generating an internal address when the error correction operation is performed; reading data from memory cells that are selected based on the internal address and an error correction code corresponding to the data; performing an error correction operation on the data based on the error correction code to produce an error-corrected data; writing the error-corrected data and an error correction code corresponding to the error-corrected data into the memory cells; determining one or more regions among regions in the memory as a repair-requiring region based on an error detected when the error correction operation is performed; receiving a first command; backing up the data and the error correction code into a redundant region in response to the first command; and repairing the repair-requiring region with the redundant region.
    Type: Application
    Filed: December 8, 2022
    Publication date: April 13, 2023
    Inventors: Kyung Whan KIM, Sun Hwa PARK, Kee Yun KIM, Sung Joo HA, Ah Reum HAN
  • Patent number: 11557366
    Abstract: A method for operating a memory includes determining to perform an error correction operation; determining whether to perform an error correction operation; generating an internal address when the error correction operation is performed; reading data from memory cells that are selected based on the internal address and an error correction code corresponding to the data; performing an error correction operation on the data based on the error correction code to produce an error-corrected data; writing the error-corrected data and an error correction code corresponding to the error-corrected data into the memory cells; determining one or more regions among regions in the memory as a repair-requiring region based on an error detected when the error correction operation is performed; receiving a first command; backing up the data and the error correction code into a redundant region in response to the first command; and repairing the repair-requiring region with the redundant region.
    Type: Grant
    Filed: October 20, 2020
    Date of Patent: January 17, 2023
    Assignee: SK hynix Inc.
    Inventors: Kyung Whan Kim, Sun Hwa Park, Kee Yun Kim, Sung Joo Ha, Ah Reum Han
  • Publication number: 20210158886
    Abstract: A method for operating a memory includes determining to perform an error correction operation; determining whether to perform an error correction operation; generating an internal address when the error correction operation is performed; reading data from memory cells that are selected based on the internal address and an error correction code corresponding to the data; performing an error correction operation on the data based on the error correction code to produce an error-corrected data; writing the error-corrected data and an error correction code corresponding to the error-corrected data into the memory cells; determining one or more regions among regions in the memory as a repair-requiring region based on an error detected when the error correction operation is performed; receiving a first command; backing up the data and the error correction code into a redundant region in response to the first command; and repairing the repair-requiring region with the redundant region.
    Type: Application
    Filed: October 20, 2020
    Publication date: May 27, 2021
    Inventors: Kyung Whan KIM, Sun Hwa PARK, Kee Yun KIM, Sung Joo HA, Ah Reum HAN