Patents by Inventor Keebum Jung

Keebum Jung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6927178
    Abstract: Methods are provided for depositing a dielectric material. The dielectric material may be used for an anti-reflective coating or as a hardmask. In one aspect, a method is provided for processing a substrate including introducing a processing gas comprising a silane-based compound and an oxygen and carbon containing compound to the processing chamber and reacting the processing gas to deposit a nitrogen-free dielectric material on the substrate. The dielectric material comprises silicon and oxygen. In another aspect, the dielectric material forms one or both layers in a dual layer anti-reflective coating.
    Type: Grant
    Filed: December 10, 2003
    Date of Patent: August 9, 2005
    Assignee: Applied Materials, Inc.
    Inventors: Bok Hoen Kim, Sudha Rathi, Sang H. Ahn, Christopher D. Bencher, Yuxiang May Wang, Hichem M'Saad, Mario D. Silvetti, Miguel Fung, Keebum Jung, Lei Zhu
  • Publication number: 20050170104
    Abstract: We have discovered that is possible to tune the stress of a single-layer silicon nitride film by manipulating certain film deposition parameters. These parameters include: use of multiple (typically dual) power input sources operating within different frequency ranges; the deposition temperature; the process chamber pressure; and the composition of the deposition source gas. In particular, we have found that it is possible to produce a single-layer, thin (300 ? to 1000 ? thickness) silicon nitride film having a stress tuned to be within the range of about ?1.4 GPa (compressive) to about +1.5 GPa (tensile) by depositing the film by PECVD, in a single deposition step, at a substrate temperature within the range of about 375° C. to about 525 ° C., and over a process chamber pressure ranging from about 2 Torr to about 15 Torr.
    Type: Application
    Filed: January 29, 2004
    Publication date: August 4, 2005
    Inventors: KeeBum Jung, Sum-Yee Tang, Martin Seamons, Reza Arghavani, Eller Juco
  • Publication number: 20040214446
    Abstract: Methods are provided for depositing a dielectric material. The dielectric material may be used for an anti-reflective coating or as a hardmask. In one aspect, a method is provided for processing a substrate including introducing a processing gas comprising a silane-based compound and an oxygen and carbon containing compound to the processing chamber and reacting the processing gas to deposit a nitrogen-free dielectric material on the substrate. The dielectric material comprises silicon and oxygen. In another aspect, the dielectric material forms one or both layers in a dual layer anti-reflective coating.
    Type: Application
    Filed: December 10, 2003
    Publication date: October 28, 2004
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Bok Hoen Kim, Sudha Rathi, Sang H. Ahn, Christopher D. Bencher, Yuxiang May Wang, Hichem M'Saad, Mario D. Silvetti, Miguel Fung, Keebum Jung, Lei Zhu