Patents by Inventor Kee Chan Kim

Kee Chan Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • GaN growth on Si using ZnO buffer layer
    Patent number: 7001791
    Abstract: A method for forming group III-N articles includes the steps of providing a single crystal silicon substrate, depositing a zinc oxide (ZnO) layer on the substrate, and depositing a single crystal group III-N layer on the ZnO layer. At least a portion of the group III-N layer is deposited at a temperature of less than 600° C.
    Type: Grant
    Filed: October 22, 2003
    Date of Patent: February 21, 2006
    Assignee: University of Florida
    Inventors: Olga Kryliouk, Tim Anderson, Kee Chan Kim
  • Group III-nitride on Si using epitaxial BP buffer layer
    Patent number: 6967355
    Abstract: A semiconductor device and method for forming the same includes a silicon (111) single crystal substrate, and an epitaxial boron phosphide (BP) layer disposed on the substrate. A group III-nitride semiconductor epitaxial layer is disposed on the BP epitaxial layer.
    Type: Grant
    Filed: October 22, 2003
    Date of Patent: November 22, 2005
    Assignee: University of Florida Research Foundation, Inc.
    Inventors: Olga Kryliouk, Tim Anderson, Omar J. Bchir, Kee Chan Kim
  • GaN growth on Si using ZnO buffer layer
    Publication number: 20040201030
    Abstract: A method for forming group III-N articles includes the steps of providing a single crystal silicon substrate, depositing a zinc oxide (ZnO) layer on the substrate, and depositing a single crystal group III-N layer on the ZnO layer. At least a portion of the group III-N layer is deposited at a temperature of less than 600° C.
    Type: Application
    Filed: October 22, 2003
    Publication date: October 14, 2004
    Inventors: Olga Kryliouk, Tim Anderson, Kee Chan Kim