Patents by Inventor Keenan Navarre WOODS

Keenan Navarre WOODS has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods to fabricate dual pore devices
    Patent number: 11536708
    Abstract: Embodiments of the present disclosure provide dual pore sensors and methods for producing these dual pore sensors. The method includes forming a film stack, where the film stack contains two silicon layers and two membrane layers, and then etching the film stack to produce a channel extending therethrough and having two reservoirs and two nanopores. The method also includes depositing a oxide layer on inner surfaces of the reservoirs and nanopores, depositing a dielectric layer on the oxide layer, and forming a metal contact extending through a portion of the stack. The method further includes etching the dielectric layers to form wells, etching the first silicon layer to reveal the protective oxide layer deposited on the inner surfaces of a reservoir, and etching the protective oxide layer deposited on the inner surfaces of the reservoirs and the nanopores.
    Type: Grant
    Filed: January 9, 2020
    Date of Patent: December 27, 2022
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Mark J. Saly, Keenan Navarre Woods, Joseph R. Johnson, Bhaskar Jyoti Bhuyan, William J. Durand, Michael Chudzik, Raghav Sreenivasan, Roger Quon
  • METHODS TO FABRICATE DUAL PORE DEVICES
    Publication number: 20210215664
    Abstract: Embodiments of the present disclosure provide dual pore sensors and methods for producing these dual pore sensors. The method includes forming a film stack, where the film stack contains two silicon layers and two membrane layers, and then etching the film stack to produce a channel extending therethrough and having two reservoirs and two nanopores. The method also includes depositing a oxide layer on inner surfaces of the reservoirs and nanopores, depositing a dielectric layer on the oxide layer, and forming a metal contact extending through a portion of the stack. The method further includes etching the dielectric layers to form wells, etching the first silicon layer to reveal the protective oxide layer deposited on the inner surfaces of a reservoir, and etching the protective oxide layer deposited on the inner surfaces of the reservoirs and the nanopores.
    Type: Application
    Filed: January 9, 2020
    Publication date: July 15, 2021
    Inventors: Mark J. SALY, Keenan Navarre WOODS, Joseph R. JOHNSON, Bhaskar Jyoti BHUYAN, William J. DURAND, Michael CHUDZIK, Raghav SREENIVASAN, Roger QUON