Abstract: Disclosed is a substrate processing apparatus. The substrate processing apparatus comprises a process chamber providing an inner space where a substrate is treated, a support unit disposed in the inner space and supporting the substrate, and a gas supply unit providing the inner space with a process gas required for generating plasma. The support unit comprises a base having a top surface on which the substrate is placed, a heater disposed in the base, and a coating layer formed on the top surface of the base.

Abstract: Disclosed is a substrate processing apparatus. The substrate processing apparatus comprises a process chamber providing an inner space where a substrate is treated, a support unit disposed in the inner space and supporting the substrate, and a gas supply unit providing the inner space with a process gas required for generating plasma. The support unit comprises a base having a top surface on which the substrate is placed, a heater disposed in the base, and a coating layer formed on the top surface of the base.

Abstract: A method of treating a porous dielectric layer includes preparing a substrate on which the porous dielectric layer including an opening and pores exposed by the opening is formed, supplying a first precursor onto the substrate to form a first sub-sealing layer sealing the exposed pores, and supplying a second precursor onto the first sub-sealing layer to form a second sub-sealing layer covering the first sub-sealing layer. Each of the first and second precursors includes silicon, and a molecular weight of the second precursor is smaller than that of the first precursor.

Abstract: A method of treating a porous dielectric layer includes preparing a substrate on which the porous dielectric layer including an opening and pores exposed by the opening is formed, supplying a first precursor onto the substrate to form a first sub-sealing layer sealing the exposed pores, and supplying a second precursor onto the first sub-sealing layer to form a second sub-sealing layer covering the first sub-sealing layer. Each of the first and second precursors includes silicon, and a molecular weight of the second precursor is smaller than that of the first precursor.

Abstract: A vapor deposition device includes a vapor deposition chamber, a heating chamber, a mixing chamber, a first reservoir for storing trichlorosilane gas, and a second reservoir for storing silane gas that reacts with hydrochloric acid gas. The heating chamber communicates with the first reservoir and the mixing chamber, heats the trichlorosilane gas and then supplies the heated gas to the mixing chamber. The mixing chamber communicates with the second reservoir and the vapor deposition chamber, mixes the heated gas supplied from the heating chamber and the silane gas and then supplies the mixed gas to the vapor deposition chamber. A temperature in the heating chamber is higher than a temperature in the mixing chamber.

Abstract: A process for supplying a mixed material gas that includes a chlorosilane gas and a carrier gas to a surface of a substrate heated at 1200 to 1400° C. from a direction perpendicular to the surface is provided. A supply rate of the chlorosilane gas is equal to or more than 200 ?mol per minute per 1 cm2 of the surface of the substrate. The carrier gas includes a hydrogen gas and at least one or more gases selected from argon, xenon, krypton and neon.

Abstract: A vapor deposition device includes a vapor deposition chamber, a heating chamber, a mixing chamber, a first reservoir for storing trichlorosilane gas, and a second reservoir for storing silane gas that reacts with hydrochloric acid gas. The heating chamber communicates with the first reservoir and the mixing chamber, heats the trichlorosilane gas and then supplies the heated gas to the mixing chamber. The mixing chamber communicates with the second reservoir and the vapor deposition chamber, mixes the heated gas supplied from the heating chamber and the silane gas and then supplies the mixed gas to the vapor deposition chamber. A temperature in the heating chamber is higher than a temperature in the mixing chamber.

Abstract: A process for supplying a mixed material gas that includes a chlorosilane gas and a carrier gas to a surface of a substrate heated at 1200 to 1400° C. from a direction perpendicular to the surface is provided. A supply rate of the chlorosilane gas is equal to or more than 200 ?mol per minute per 1 cm2 of the surface of the substrate. The carrier gas includes a hydrogen gas and at least one or more gases selected from argon, xenon, krypton and neon.

Abstract: A thin film preparation apparatus performs film formation by supplying a precursor CuCl with increased supply accuracy and Cl* from a material supply apparatus outside a chamber into the chamber with the use of a member to be etched, which has been temperature-controlled independently, and depositing a Cu component of the CuCl on a substrate, without complicating temperature control (simply by heating control by a heater), and without the influence of radiation from a plasma.