Patents by Inventor Keeyoung Park

Keeyoung Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • PATTERN PROCESSING METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE PRODUCT, AND PRETREATMENT LIQUID FOR PATTERN STRUCTURE
    Publication number: 20170365486
    Abstract: Provided are a pattern processing method for applying a pretreatment liquid for modifying the surface of a pattern structure to a semiconductor substrate provided with the pattern structure, which has at least one of polysilicon, amorphous silicon, Ge, or a low dielectric constant material having a k value of 2.4 or less, a method for manufacturing a semiconductor substrate product, and a pretreatment liquid for a pattern structure.
    Type: Application
    Filed: July 7, 2017
    Publication date: December 21, 2017
    Applicant: FUJIFILM Corporation
    Inventors: Keeyoung PARK, Atsushi MIZUTANI
  • Etching liquid, kit of same, etching method using same, method for producing semiconductor substrate product, and method for manufacturing semiconductor element
    Patent number: 9809746
    Abstract: There is provided an etching liquid including nitric acid; a fluorine-containing compound; and a nitrogen-containing organic compound A containing a nitrogen atom, or a phosphorus-containing compound B.
    Type: Grant
    Filed: December 2, 2015
    Date of Patent: November 7, 2017
    Assignee: FUJIFILM Corporation
    Inventors: Yasuo Sugishima, Atsushi Mizutani, Keeyoung Park
  • MRAM DRY ETCHING RESIDUE REMOVAL COMPOSITION, METHOD OF PRODUCING MAGNETORESISTIVE RANDOM ACCESS MEMORY, AND COBALT REMOVAL COMPOSITION
    Publication number: 20170229308
    Abstract: An object is to provide an MRAM dry etching residue removal composition capable of removing dry etching residues while suppressing damage to a substrate containing a specific metal in a step of producing an MRAM, a method of producing a magnetoresistive random access memory using the same, and a cobalt removal composition having excellent cobalt removability. The MRAM dry etching residue removal composition of the present invention contains a strong oxidizing agent and water. In addition, the cobalt removal composition of the present invention contains orthoperiodic acid and water.
    Type: Application
    Filed: April 26, 2017
    Publication date: August 10, 2017
    Inventors: Keeyoung PARK, Atsushi MIZUTANI
  • RUTHENIUM REMOVAL COMPOSITION AND METHOD OF PRODUCING MAGNETORESISTIVE RANDOM ACCESS MEMORY
    Publication number: 20170222138
    Abstract: An object is to provide a ruthenium removal composition capable of dissolving Ru while suppressing dissolution of CoFeB, and a method of producing a magnetoresistive random access memory (MRAM) using the same. A ruthenium removal composition of the present invention contains orthoperiodic acid and water, and the pH is 11 or more. It is preferable that the content of orthoperiodic acid in the ruthenium removal composition is 0.01% to 5% by mass with respect to the total mass of the composition.
    Type: Application
    Filed: April 17, 2017
    Publication date: August 3, 2017
    Inventors: Keeyoung PARK, Atsushi MIZUTANI
  • LOCALIZATION SYSTEM AND METHOD FOR MOBILE OBJECT USING WIRELESS COMMUNICATION
    Publication number: 20090265133
    Abstract: The present invention relates to a localization system and method for a mobile object. An object of the present invention is to provide a localization system and method for a mobile object capable of obtaining precise stable position data against changes in light intensity and vibration of the mobile object and reducing operation loads of a control system disposed in the mobile object, as compared with a conventional case.
    Type: Application
    Filed: August 1, 2006
    Publication date: October 22, 2009
    Inventors: Moonhong Baek, Seungho Baek, Jaehan Park, Hogil Lee, Daehee Won, Keeyoung Park