Patents by Inventor Keh-La Lin

Keh-La Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7595690
    Abstract: A voltage-clamping device used in an operational amplifier is provided. The operational amplifier comprises a first transistor. The cross-voltage between the gate and the source of the first transistor is near to a specific voltage and the cross-voltage between the drain and the source of the first transistor is not equal to zero, so as to generate a big substrate current. The voltage-clamping device comprises a second transistor whose source and gate are respectively coupled to the drain of the first transistor and used for receiving a bias signal, so that the second transistor is biased in saturation region, and the voltage at the source of the second transistor is made equal to the difference between the bias signal and the threshold voltage of the second transistor. Thus, the cross-voltage between the drain and the source of the first transistor is reduced and the substrate current is reduced accordingly.
    Type: Grant
    Filed: April 7, 2008
    Date of Patent: September 29, 2009
    Assignee: Raydium Semiconductor Corporation
    Inventors: Ko-Yang Tso, Keh-La Lin, Yann-Hsiung Liang, Chin-Chieh Chao
  • Publication number: 20080252375
    Abstract: A voltage-clamping device used in an operational amplifier is provided. The operational amplifier comprises a first transistor. The cross-voltage between the gate and the source of the first transistor is near to a specific voltage and the cross-voltage between the drain and the source of the first transistor is not equal to zero, so as to generate a big substrate current. The voltage-clamping device comprises a second transistor whose source and gate are respectively coupled to the drain of the first transistor and used for receiving a bias signal, so that the second transistor is biased in saturation region, and the voltage at the source of the second transistor is made equal to the difference between the bias signal and the threshold voltage of the second transistor. Thus, the cross-voltage between the drain and the source of the first transistor is reduced and the substrate current is reduced accordingly.
    Type: Application
    Filed: April 7, 2008
    Publication date: October 16, 2008
    Applicant: Raydium Semiconductor Corporation
    Inventors: Ko-Yang Tso, Keh-La Lin, Yann-Hsiung Liang, Chin-Chieh Chao