Patents by Inventor Kei DOIOKA

Kei DOIOKA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for growing ?-GAO-based single crystal
    Patent number: 10526721
    Abstract: Provided is a method for growing a ?-Ga2O3-based single crystal, whereby it becomes possible to grow a ?-Ga2O3-based single crystal having a small variation in crystal structure and also having a high quality in the direction of a b axis. In one embodiment, a method for growing a ?-Ga2O3-based single crystal includes growing a plate-shaped Sn doped ?-Ga2O3-based single crystal in the direction of the b axis using a seed crystal.
    Type: Grant
    Filed: March 31, 2014
    Date of Patent: January 7, 2020
    Assignees: KOHA CO., LTD., TAMURA CORPORATION
    Inventors: Shinya Watanabe, Kazuyuki Iizuka, Kei Doioka, Haruka Matsubara, Takekazu Masui
  • METHOD FOR GROWING BETA-GA2O3-BASED SINGLE CRYSTAL
    Publication number: 20160032485
    Abstract: Provided is a method for growing a ?-Ga2O3-based single crystal, whereby it becomes possible to grow a ?-Ga2O3-based single crystal having a small variation in crystal structure and also having a high quality in the direction of a b axis. In one embodiment, a method for growing a ?-Ga2O3-based single crystal includes growing a plate-shaped Sn doped ?-Ga2O3-based single crystal in the direction of the b axis using a seed crystal.
    Type: Application
    Filed: March 31, 2014
    Publication date: February 4, 2016
    Applicants: KOHA CO., LTD., TAMURA CORPORATION
    Inventors: Shinya WATANABE, Kazuyuki IIZUKA, Kei DOIOKA, Haruka MATSUBARA, Takekazu MASUI
  • Ga2O3-BASED SINGLE CRYSTAL SUBSTRATE
    Publication number: 20150380500
    Abstract: A Ga2O3-based single crystal substrate includes a main surface including BOW of not less than ?13 ?m and not more than 0 ?m. The main surface may further include WARP of not more than 25 ?m. The main surface may further include TTV of not more than 10 ?m.
    Type: Application
    Filed: February 27, 2015
    Publication date: December 31, 2015
    Inventors: Takekazu MASUI, Kimiyoshi KOSHI, Kei DOIOKA, Yu YAMAOKA