Abstract: An edge junction 10 with reduced parasitic inductance. The edge junction 10 has a laminar structure 22 including: a substrate 14; a first superconductive layer 12 deposited on a substrate 14; a first dielectric layer 16 deposited on the first superconductive layer 12; a second superconductive layer 18 deposited on the first dielectric layer 16; and a second dielectric layer 20 deposited on the second superconductive layer 18. The first and second superconductive layers 12 and 18 and the first and second dielectric layers 16 and 20 form a first laminar structure 22 having a planar segment 24 and a self-aligned ramp segment 26, the ramp segment 26 having a constantly-decreasing thickness and being connected to the planar segment 24 at an angle .theta. thereto.

Abstract: Acoustic wave devices employing shallow bulk acoustic waves rather than surface acoustic waves, to provide higher frequencies of operation and other significant advantages, such as less susceptibility to aging and less sensitivity to surface contamination. In each embodiment of the invention, a transmitting transducer and a receiving transducer are oriented on the surface of an anisotropic piezoelectric crystal to achieve substantial coupling of shallow bulk acoustic waves and essentially zero coupling of surface acoustic waves. In one embodiment of the invention, various types of grating filters utilize shallow bulk acoustic waves, and a set of parallel mechanical or electrical discontinuities at or near the surface of the crystal provide reflection of acoustic energy at a frequency determined by the spacing of the discontinuities. Uniformly spaced gratings provide bandpass filter operation, and gratings with graduated spacings provide for frequency compression or expansion.