Abstract: A TMR element includes a lower electrode layer, a TMR multi-layer stacked on the lower electrode layer, and an upper electrode layer stacked on the TMR multi-layer. The TMR multi-layer includes a tunnel barrier layer having a three-layered structure of a first crystalline layer, a crystalline semiconductor layer and a second crystalline insulation layer stacked in this order.

Abstract: An accommodating vessel, which is detachably attached to a vessel receiving part of a casing of an image forming device to accommodate an image forming material, the accommodating vessel including: a vessel main body that includes a tubular part; a cover member that includes a fitted part; at least one positioned protrusion; and at least one positioned positioning protrusion, wherein the at least one positioned protrusion includes: a guide protrusion that extends in a rotating direction of the cover member; and a plurality of rotation stop protrusions that extends in opposite directions to each other relative to the guide protrusion along a pushing and pulling direction of the cover member, and Wherein the positioning protrusion includes a stop wall that abuts on the guide protrusion and the plurality of rotation stop protrusions of the at least one positioned protrusion to be stopped.

Abstract: An image forming member includes: an electrostatic latent image holding member that holds an electrostatic latent image; a developing unit that develops a toner image formed by a toner on a surface of the electrostatic latent image holding member; a toner removing member that removes a residual toner remaining on a surface of the electrostatic latent image holding member; a conveying path including a conveying member that is internally provided in the conveying path and that returns the residual toner removed from the surface of the electrostatic latent image holding member to the developing unit; and a trapping portion that traps a foreign matter conveyed by the conveying member, the electrostatic latent image holding member, the developing unit, the toner removing member, the conveying path, and the trapping portion of the image forming member being integrally and detachably attached to an image forming apparatus body.

Abstract: An accommodating container includes: a container main body that has an opening at a part thereof; a cap member; and a seal member, wherein the seal member includes a plurality of seal abutment pieces that abut on a wall surface of the cap member or a wall surface of the container main body, and are elastically deformable, and at least one of the seal abutment pieces is arranged in non-contact with the wall surface of the cap member or the wall surface of the container main body in a first state before the cap member is attached to the container main body, and is arranged in contact with the wall surface of the cap member or the wall surface of the container main body in a second state where the cap member has been attached in an attachment position of the container main body.

Abstract: A pole layer of a magnetic head incorporates a soft magnetic film made of an iron-cobalt-nickel-base alloy. When the total of the iron, cobalt and nickel contents of the soft magnetic film is assumed as 100 weight percent, the iron content of the soft magnetic film is within a range of 42 to 90 weight percent inclusive, the cobalt content thereof is within a range of 0 to 48 weight percent inclusive, and the nickel content thereof is within a range of 10 to 20 weight percent inclusive. The soft magnetic film has a crystal structure that is a mixed crystal of a body-centered cubic structure phase and a face-centered cubic structure phase. The soft magnetic film is manufactured by performing electroplating using a plating current whose direction is alternately switched.

Abstract: A pole layer incorporates a track width defining portion and a wide portion. The track width defining portion has an end face that is located in the medium facing surface and that defines the track width. The maximum width of the wide portion is greater than the track width and equal to or greater than the length of the wide portion taken in the direction orthogonal to the medium facing surface. When the coil is generating no magnetic field, in the end face of the track width defining portion, there exist first and second regions in which the directions of components of magnetization orthogonal to the medium facing surface are opposite.

Abstract: A magnetic head device includes a magnetic head section having a first free layer with a magnetization orientation that is not previously defined but changes depending upon only external magnetic field applied, a second free layer with a magnetization orientation that is not previously defined but changes depending upon only external magnetic field applied, a nonmagnetic intermediate layer sandwiched between the first free layer and the second free layer, a first electrode layer stacked on a surface of the first free layer opposite to the nonmagnetic intermediate layer, and a second electrode layer stacked on a surface of the second free layer opposite to the nonmagnetic intermediate layer; a sense-current supply means for flowing a sense current across the first electrode layer and the second electrode layer of the magnetic head section; and a frequency divider circuit for dividing by two a frequency of an output signal produced across the first electrode layer and the second electrode layer of the magnetic

Abstract: The invention is devised to provide a method of manufacturing a thin film magnetic head including a magnetoresistive element having higher reading performance. In manufacturing the thin film magnetic head, after forming an MR element 15, a pair of magnetic domain controlling layers 16 are formed by stacking a buffer layer 161, a magnetic bias layer 162 and a cap layer 163 in this order on both sides, in a track-width direction, of the MR element 15 via an insulating layer 14 respectively. Then, a cap layer 17 is formed so as to cover the upper surface of the MR element 15 and connect the pair of cap-layers 163. After that, a gap adjustment layer 18 and a top shielding layer 19 are formed in order so as to cover the pair of cap layers 163 and the cap layer 17, thereby a read head section 10 is completed.

Abstract: A container includes: a container body that is to be inserted into the device, and that has a port; and a pair of support members arranged so that the support members face each other across the port, that supports a cover for covering the port, the cover including: a covering portion that covers the port; a pair of supported members that are supported by the support members; and a pair of connecting portions arranged so that the connecting portions face each other, that connects the covering portion and the supported members, and at least one of the connecting members being configured so that the connecting member becomes narrow as an outside surface of the connecting member tapers towards its inside surface at an end of the container body inserted into the device.

Abstract: The invention provides a giant magneto-resistive effect device (CPP-GMR device) having a CPP (current perpendicular to plane) structure comprising a spacer layer, and a fixed magnetized layer and a free layer stacked one upon another with said spacer layer interleaved between them, with a sense current applied in a stacking direction, wherein the spacer layer comprises a first and a second nonmagnetic metal layer, each formed of a nonmagnetic metal material, and a semiconductor oxide layer interleaved between the first and the second nonmagnetic metal layer, wherein the semiconductor oxide layer that forms a part of the spacer layer is made of indium oxide (In2O3), or the semiconductor oxide layer contains indium oxide (In2O3) as its main component, and an oxide containing a tetravalent cation of SnO2 is contained in the indium oxide that is the main component.

Abstract: A method for manufacturing a magnetic field detecting element has the steps of: forming stacked layers by sequentially depositing a pinned layer, a spacer layer, a spacer adjoining layer which is adjacent to the spacer layer, a metal layer, and a Heusler alloy layer in this order, such that the layers adjoin each other; and heat treating the stacked layers in order to form the free layer out of the spacer adjoining layer, the metal layer, and the Heusler alloy layer. The spacer adjoining layer is mainly formed of cobalt and iron, and has a body centered cubic structure, and the metal layer is formed of an element selected from the group consisting of silver, gold, copper, palladium, or platinum, or is formed of an alloy thereof.

Abstract: A current-perpendicular-to-plane magneto-resistive element includes a magneto-resistive film and a pair of upper and lower magnetic shielding films holding the magneto-resistive film therebetween for current feeding. The lower magnetic shielding film has an at least two-layer structure including a crystalline material layer and an amorphous material layer disposed below the crystalline material layer.

Abstract: An epoxy resin composition includes (A) an epoxy resin, (B) a curing agent, and (C) an epoxidized polyisoprene (c-1) that contains an epoxy group at 0.15 to 2 meq/g in the molecule and has a number-average molecular weight of 15000 to 200000 or an epoxidized polybutadiene (c-2) that contains an epoxy group at 0.15 to 2 meq/g in the molecule and has a number-average molecular weight of 20000 to 200000. The epoxy resin composition has high heat resistance and reduced internal stress, and can be suitably used in applications such as electronic part materials represented by semiconductor encapsulating materials and adhesives.

Abstract: In manufacturing the thin film magnetic head, the rear end face of the MR element and the rear end face of a resistive film pattern are determined with high precision using a mask pattern, in which a first opening and a second opening are collectively formed. The first and second openings are located side by side in a track-width direction. The first opening includes a first edge extending across the MR film in the track-width direction, and the second opening includes a second edge located at a given interval, as measured in a direction orthogonal to the track-width direction, from the first edge, and extending in the track-width direction. In the step of polishing for forming a magnetic-recording-medium-facing-surface, the amount of polishing is determined by monitoring the resistance change of the resistive film pattern, thereby reducing the dimension errors in the MR height when manufacturing the MR element.

Abstract: A curable resin composition includes (A) a cationically polymerizable-compound, (B) a cationic photopolymerization initiator, and (C) an epoxidized polyisoprene containing an epoxy group at 0.15 to 2.5 meq/g in the molecule and having a number-average molecular weight of 15000 to 200000. The curable resin composition shows excellent elongation properties and high break elongation even in a cured state and can give a cured product having superior compatibility, transparency, flexibility and waterproofness. Accordingly, the composition is suitable for use as adhesives, coating agents, encapsulating materials, inks, sealing materials and the like.

Abstract: A magnetoresistive element includes a first and a second shield, and an MR stack disposed between the shields. The MR stack includes a first and a second ferromagnetic layer, and a nonmagnetic spacer layer disposed between the ferromagnetic layers. The first and second ferromagnetic layers have magnetizations that are in directions antiparallel to each other when no external magnetic field is applied to the layers, and that change directions in response to an external magnetic field. An insulating layer is formed to touch a rear end face of the MR stack and the first shield, and a bias magnetic field applying layer is formed above the insulating layer with a buffer layer disposed in between. The bias magnetic field applying layer includes a hard magnetic layer and a high saturation magnetization layer. The high saturation magnetization layer is located between the rear end face and the hard magnetic layer, but not located between the first shield and the hard magnetic layer.

Abstract: A magnetoresistance effect element comprises: a magnetoresistive stack including: first, second and third magnetic layers whose magnetization directions change in accordance with an external magnetic field, said second magnetic layer being located between said first magnetic layer and the third magnetic layer; a first non-magnetic intermediate layer sandwiched between said first and second magnetic layers, said first non-magnetic intermediate layer allowing said first magnetic layer and said second magnetic layer to be exchange-coupled such that the magnetization directions thereof are anti-parallel to each other when no magnetic field is applied; and a second non-magnetic intermediate layer sandwiched between said second and third magnetic layers, said second non-magnetic intermediate layer producing a magnetoresistance effect between said second magnetic layer and said third magnetic layer; wherein sense current is adapted to flow in a direction perpendicular to a film plane; a bias magnetic layer provided

Abstract: A thin-film magnetic head comprises: a magnetoresistive element: first and second read shield layers disposed to sandwich the magnetoresistive element; and bias field applying layers for applying a bias magnetic field to the magnetoresistive element. Each of the first and second read shield layers has: a first end face located in a medium facing surface; a second end face opposite to the first end face; a first width changing portion that continuously decreases in width as the distance from the first end face decreases; and a second width changing portion that continuously decreases in width as the distance from the second end face decreases.

Abstract: An MR element comprises: a tunnel barrier layer having two surfaces facing toward opposite directions; a free layer disposed adjacent to one of the surfaces of the tunnel barrier layer and having a direction of magnetization that changes in response to a signal magnetic field; and a pinned layer disposed adjacent to the other of the surfaces of the tunnel barrier layer and having a fixed direction of magnetization. The tunnel barrier layer is made of a material containing an oxide semiconductor such as ZnO. The MR element has a resistance-area product that falls within a range of 0.3 to 2.0 ?-?m2 inclusive.

Abstract: A magnetic field sensor comprises: a magnetic field detecting element that detects magnitude of an external magnetic field based on electric resistance of the magnetic field detecting element to sense current, the electric resistance being varied in accordance with the external magnetic field; an upper shield layer that is formed to cover the magnetic field detecting element; and a protective layer that is formed above the upper shield layer with respect to a direction of stacking. The upper shield layer includes a first portion at least part of which covers a top surface of the magnetic field detecting element, and a second portion that covers the first portion, and, the first portion has a larger absolute value of magnetostriction than the second portion.