Abstract: A method for manufacturing a semiconductor package such as CoWoS-L, the method including: preparing an intermediate structure having a base material with a first main surface and a second main surface on the rear side of the first main surface, and a redistribution layer provided on the first main surface and having an insulating resin layer and wiring, the base material having a resin portion including a through portion that penetrates from the first main surface to the second main surface, and the redistribution layer forming a trench having a bottom surface on which the through portion is exposed; and cutting the through portion along the trench, thereby forming a plurality of wiring structures having base materials divided.

Abstract: An Integrated dicing/die bonding film is disclosed. This integrated dicing/die bonding film includes, in the stated order: a first base material layer; a die-bonding film containing electroconductive particles; a pressure-sensitive adhesive layer; and a second base material layer. The first base material layer has a cut portion provided on a surface of the die-bonding film side along an outer edge of the die-bonding film. A maximum value of 30° peeling strength of the die-bonding film with respect to the first base material layer as measured at 25° C. is 0.50 N/20 mm or less.

Abstract: A semiconductor device having a dolmen structure, includes a substrate, a first chip disposed on the substrate, support pieces disposed around the first chip on the substrate, a second chip that is supported by the support pieces and that covers the first chip. Each support piece has a multi-layer structure including a first bonding adhesive piece, a second bonding adhesive piece and a metal piece interposed between the first bonding adhesive piece and the second bonding adhesive piece, in which the first bonding adhesive piece is in contact with the metal piece and with the substrate. An additional bonding adhesive piece is interposed between the second chip and at least one support piece, and contacts the second bonding adhesive piece of the support piece.

Abstract: A support piece formation laminate film according to the present disclosure includes a base material film, a pressure-sensitive adhesive layer, and a support piece formation film, in this order, in which the support piece formation film has a multi-layer structure including at least a metal layer. The support piece formation laminate film is applied to a manufacturing process of a semiconductor device having a dolmen structure including a substrate, a first chip disposed on the substrate, a plurality of support pieces disposed around the first chip, on the substrate, and a second chip disposed to be supported by the plurality of support pieces and to cover the first chip.

Abstract: One aspect of the present disclosure is a manufacturing method for a support piece used in the formation of a dolmen structure in a semiconductor device, including processes of: (A) preparing a laminate film including a base material film, an adhesive layer, and a support piece formation film, for example, including a thermosetting resin layer, in this order; and (B) forming support pieces on a surface of the adhesive layer by singulating the support piece formation film, in which the process (B) includes a process of forming a cut in the support piece formation film partway in a thickness direction, and a process of singulating the support piece formation film in a cooled state by expansion, in this order.

Abstract: Disclosed is a film-shaped adhesive. An embodiment of the film-shaped adhesive contains metal particles and has a shear viscosity at 110° C. of 30000 Pa·s or less. Another embodiment of the film-shaped adhesive contains metal particles and has a loss modulus at 110° C. of 200 kPa or less. Another embodiment of the film-shaped adhesive contains metal particles, a thermosetting resin, a curing agent, and an elastomer, in which a content of the metal particles based on the total amount of the metal particles, thermosetting resin, curing agent, and elastomer is 70.0% by mass or more, and a total content of the thermosetting resin and the curing agent is 13.0% by mass or more.

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor chip; a support member having the semiconductor chip mounted thereon; and a bonding adhesive member provided between the semiconductor chip and the support member and adhering the semiconductor chip and the support member. The bonding adhesive member includes a sintered body of silver particles.

Abstract: A semiconductor device includes: a substrate; an adhesive member arranged on a surface of the substrate; a first chip stacked on the adhesive member with a first adhesive piece interposed therebetween; and a second chip stacked on the first chip with a second adhesive piece interposed therebetween. The adhesive member has a multilayer structure including a pair of surface layers formed of a cured product of a thermosetting resin composition and an intermediate layer arranged between the pair of surface layers.

Abstract: A collet for compressing an adhesive-attached chip, the collet including a main body having a first pressing surface to which a pressing force from a compressing device is directly transmitted, and a projecting portion projecting from the main body and having a second pressing surface provided along an outer circumference of the first pressing surface, the first pressing surface and the second pressing surface forming a holding surface for holding the adhesive-attached chip.

Abstract: One aspect of the present disclosure is a manufacturing method for a support piece used in the formation of a dolmen structure in a semiconductor device, including processes of: (A) preparing a laminate film including a base material film, an adhesive layer, and a support piece formation film, for example, including a thermosetting resin layer, in this order; and (B) forming support pieces on a surface of the adhesive layer by singulating the support piece formation film, in which the process (B) includes a process of forming a cut in the support piece formation film partway in a thickness direction, and a process of singulating the support piece formation film in a cooled state by expansion, in this order.

Abstract: A support piece formation laminate film according to the present disclosure includes a base material film, a pressure-sensitive adhesive layer, and a support piece formation film, in this order, in which the support piece formation film has a multi-layer structure including at least a metal layer. The support piece formation laminate film is applied to a manufacturing process of a semiconductor device having a dolmen structure including a substrate, a first chip disposed on the substrate, a plurality of support pieces disposed around the first chip, on the substrate, and a second chip disposed to be supported by the plurality of support pieces and to cover the first chip.