Abstract: The present invention makes clear and defines a congruent composition of a langasite-based oxide, and establishes a method of manufacturing a crystal by any desired composition of AE3ME1+a(Ga1?xAlx)3+bSi2+cO14 (AE is an alkaline-earth metal, ME is Nb or Ta, 0?x?1, ?0.5<a?0 or 0<a<0.5, ?0.5<b?0 or 0<b?0.5, and ?0.5<c?0 or 0<c<0.5, excluding a=b=c=0). This makes it possible to suppress the formation of an impurity, and improve the yield and crystal manufacturing rate. The raw material is a raw material mixture prepared by mixing an alkaline-earth metal or its carbonate or oxide, Nb or Ta or its oxide, Ga or its oxide, Al or its oxide, and Si or its oxide.

Abstract: A metal member according to this invention is composed of polycrystals of a metal made of ruthenium or an alloy containing ruthenium at a maximum ratio. The aspect ratio of a crystal grain of the polycrystalline metal member is 1.5 or more. A plurality of crystal grains forming the metal member are arranged with their major axes being pointed in the same direction, and the number of crystal grains in a section in the major axis direction of the crystal grains is 120 or less per 1 mm2.

Abstract: To provide a vibrator made of a piezoelectric crystal having a larger electromechanical coupling coefficient and a more satisfactory frequency-temperature characteristic than those of quartz, a vibrating piece (101) is made of a Ca3Ta(Ga1-xAlx)3Si2O14 single crystal (0<x?1). In the single crystal, letting ? be a rotation angle from an X-Z plane about an X-axis serving as a rotation axis, 18x+17.5???24x+24.5 is set. In addition, the vibrating piece (101) is made of a Ca3Nb(Ga1-xAlx)3Si2O14 single crystal (0<x?1). In the single crystal of this arrangement, letting ? be a rotation angle from an X-Z plane about an X-axis serving as a rotation axis, 25x+23.083???32x+26.167 is set.

Abstract: To improve the Q value of a piezoelectric thin-film element in a state in which unnecessary vibration is suppressed, an acoustic reflection film (104) is affixed to a first electrode (102), a piezoelectric single-crystal substrate (101) is thinned by polishing from the other surface (101b) of the piezoelectric single-crystal substrate (101), such that the first electrode (102) and piezoelectric thin film (105) are piled on the piezoelectric single-crystal substrate (101). In this polishing, a pressure (polishing pressure) to the surface (101b) during polishing in an electrode formation region where the first electrode (102) is formed differs from that in a non-electrode formation region around the electrode formation region. Consequently, the electrode formation region of the piezoelectric thin film (105), where the first electrode (102) is formed, is made thinner than the non-electrode formation region around the electrode formation region.

Abstract: The present invention makes clear and defines a congruent composition of a langasite-based oxide, and establishes a method of manufacturing a crystal by any desired composition of AE3ME1+a(Ga1-xAlx)3+bSi2+cO14 (AE is an alkaline-earth metal, ME is Nb or Ta, 0?x?1, ?0.5<a?0 or 0<a<0.5, ?0.5<b?0 or 0<b?0.5, and ?0.5<c?0 or 0<c<0.5, excluding a=b=c=0). This makes it possible to suppress the formation of an impurity, and improve the yield and crystal manufacturing rate. The raw material is a raw material mixture prepared by mixing an alkaline-earth metal or its carbonate or oxide, Nb or Ta or its oxide, Ga or its oxide, Al or its oxide, and Si or its oxide.

Abstract: An illuminant has a short fluorescence lifetime, high transparency, and high light yield and a radiation detector uses the illuminant. The illuminant is appropriate for a radiation detector for detecting gamma-rays, X-rays, ?-rays, and neutron rays, and has high radiation resistance, a short fluorescence decay time and high emission intensity. The illuminant has a garnet structure using emission from the 4f5d level of Ce3+, and includes a garnet illuminant prepared by co-doping of at least one type of monovalent or divalent cation at a molar ratio of 7000 ppm or less with respect to all cations, to an illuminant having a garnet structure represented by general formula CexRE3?xM5+yO12+3y/2 (where 0.0001?x?0.3, 0?y?0.5 or 0?y??0.5, M is one type or two or more types selected from Al, Lu, Ga, and Sc, and RE is one type or two or more types selected from La, Pr, Gd, Tb, Yb, Y, and Lu).

Abstract: To provide a vibrator made of a piezoelectric crystal having a larger electromechanical coupling coefficient and a more satisfactory frequency-temperature characteristic than those of quartz, a vibrating piece (101) is made of a Ca3Ta(Ga1-xAlx)3Si2O14 single crystal (0<x?1). In the single crystal, letting ? be a rotation angle from an X-Z plane about an X-axis serving as a rotation axis, 18x+17.5???24x+24.5 is set. In addition, the vibrating piece (101) is made of a Ca3Nb(Ga1-xAlx)3Si2O14 single crystal (0<x?1). In the single crystal of this arrangement, letting ? be a rotation angle from an X-Z plane about an X-axis serving as a rotation axis, 25x+23.083???32x+26.167 is set.

Abstract: To improve the Q value of a piezoelectric thin-film element in a state in which unnecessary vibration is suppressed, an acoustic reflection film (104) is affixed to a first electrode (102), a piezoelectric single-crystal substrate (101) is thinned by polishing from the other surface (101b) of the piezoelectric single-crystal substrate (101), such that the first electrode (102) and piezoelectric thin film (105) are piled on the piezoelectric single-crystal substrate (101). In this polishing, a pressure (polishing pressure) to the surface (101b) during polishing in an electrode formation region where the first electrode (102) is formed differs from that in a non-electrode formation region around the electrode formation region. Consequently, the electrode formation region of the piezoelectric thin film (105), where the first electrode (102) is formed, is made thinner than the non-electrode formation region around the electrode formation region.

Abstract: A crystal material that is represented by a general formula (1): (RExA1-x-y-sByM?s)2+?(Si1-t,M?t)2+?O7+? (1), the crystal material having a pyrochlore type structure, being a nonstoichiometric composition, and being a congruent melting composition, wherein in Formula (1), A contains at least one or more selected from Gd, Y, La, Sc, Yb, and Lu; B contains at least one or more selected from La, Gd, Yb, Lu, Y, and Sc; 0.1?y<0.4; RE contains at least one or more selected from Ce, Pr, Nd, Eu, Tb, and Yb; 0<x<0.1; M? and M? contain at least one or more selected from Li, Na, K, Mg, Ca, Sr, Ba, Ti, Zr, Hf, Fe, Ta, and W; 0?s<0.01 and 0?t<0.01; and 0<|?|<0.3 and 0?|?|<0.3 and 0?|?|<0.5.

Abstract: A crystal material that is represented by a general formula (1): (RExA1-x-y-sByM?s)2+?(Si1-t?M?t)2+?O7+? (1), the crystal material having a pyrochlore type structure, being a nonstoichiometric composition, and being a congruent melting composition, wherein in Formula (1), A contains at least one or more selected from Gd, Y, La, Sc, Yb, and Lu; B contains at least one or more selected from La, Gd, Yb, Lu, Y, and Sc; 0.1?y<0.4; RE contains at least one or more selected from Ce, Pr, Nd, Eu, Tb, and Yb; 0<x<0.1; M? and M? contain at least one or more selected from Li, Na, K, Mg, Ca, Sr, Ba, Ti, Zr, Hf, Fe, Ta, and W; 0?s<0.01 and 0?t<0.01; and 0<|?|<0.3 and 0?|?|<0.3 and 0?|?|<0.5.

Abstract: The present invention provides an oxide-base scintillator single crystal having an extremely large energy of light emission, adoptable to X-ray CT and radioactive ray transmission inspection apparatus, and more specifically to provide a Pr-containing, garnet-type oxide single crystal, a Pr-containing perovskite-type oxide single crystal, and a Pr-containing silicate oxide single crystal allowing detection therefrom light emission supposedly ascribable to 5d-4f transition of Pr.

Abstract: An illuminant has a short fluorescence lifetime, high transparency, and high light yield and a radiation detector uses the illuminant. The illuminant is appropriate for a radiation detector for detecting gamma-rays, X-rays, ?-rays, and neutron rays, and has high radiation resistance, a short fluorescence decay time and high emission intensity. The illuminant has a garnet structure using emission from the 4f5d level of Ce3+, and includes a garnet illuminant prepared by co-doping of at least one type of monovalent or divalent cation at a molar ratio of 7000 ppm or less with respect to all cations, to an illuminant having a garnet structure represented by general formula CexRE3?xM5+yO12+3y/2 (where 0.0001?x?0.3, 0?y?0.5 or 0?y??0.5, M is one type or two or more types selected from Al, Lu, Ga, and Sc, and RE is one type or two or more types selected from La, Pr, Gd, Tb, Yb, Y, and Lu).

Abstract: The garnet-type crystal for a scintillator of the present invention is represented by General Formula (1), (2), or (3), Gd3-x-yCexREyAl5-zGazO12??(1) wherein in Formula (1), 0.0001?x?0.15, 0?y?0.1, 2<z?4.5, and RE represents at least one selected from Y, Yb, and Lu; Gd3-a-bCeaLubAl5-cGacO12??(2) wherein in Formula (2), 0.0001?a?0.15, 0.1<b?3, and 2<c?4.5; Gd3-p-qCerRE?qAl5-rGarO12??(3) wherein in Formula (3), 0.0001?p?0.15, 0.1<q?3, 1<r?4.5, and RE? represents Y or Yb.

Abstract: A radiation detector (1) includes a three-dimensional stacked scintillator (12) that includes a plurality of scintillator blocks (13) arranged in a matrix in a three-dimensional manner so as to form a prism, in which interposed layers (15) which have a refractive index different from a refractive index of the scintillator blocks (13) and/or have a characteristic of absorbing or scattering some of light emitted by the scintillator blocks are disposed, out of boundary surfaces between the plurality of scintillator blocks (13), on the boundary surfaces extending in a direction perpendicular to a height direction H of the prism, and light blocking layers (14) which block transmission of light emitted by the scintillator are disposed on at least some of the boundary surfaces extending in a direction parallel to the height direction of the prism.

Abstract: The garnet-type crystal for a scintillator of the present invention is represented by General Formula (1), (2), or (3), Gd3-x-yCexREyAl5-zGazO12??(1) wherein in Formula (1), 0.0001?x?0.15, 0?y?0.1, 2<z?4.5, and RE represents at least one selected from Y, Yb, and Lu; Gd3-a-bCeaLubAl5-cGacO12??(2) wherein in Formula (2), 0.0001?a?0.15, 0.1<b?3, and 2<c?4.5; Gd3-p-qCerRE?qAl5-rGarO12??(3) wherein in Formula (3), 0.0001?p?0.15, 0.1<q?3, 1<r?4.5, and RE? represents Y or Yb.

Abstract: An electric signal produced by a photo-electric conversion element (104) is input to a comparator (120). The comparator (120) judges whether the electric signal output from the amplifier (110) exceeds a reference voltage or not, and outputs a HIGH signal if “exceeds”. A reference voltage modifier unit (130) elevates the reference voltage, after a predetermined time period elapses since the comparator (120) judged that the electric signal reached or exceeded the reference voltage. The signal processor calculates an incidence time which represents a time when the signal light starts to enter the photo-electric converter unit (100), by correcting a rise-up time of the electric signal when it reaches or exceeds the reference voltage, based on a pulse width which represents a time period from when the electric signal exceeds the reference voltage, up to when the electric signal falls below the reference voltage.

Abstract: An electric signal produced by a photo-electric conversion element(104) is input to a comparator (120). The comparator (120) judges whether the electric signal output from the amplifier (110) exceeds a reference voltage or not, and outputs a HIGH signal if “exceeds”. A reference voltage modifier unit (130) elevates the reference voltage, after a predetermined time period elapses since the comparator (120) judged that the electric signal reached or exceeded the reference voltage. The signal processor calculates an incidence time which represents a time when the signal light starts to enter the photo-electric converter unit (100), by correcting a rise-up time of the electric signal when it reaches or exceeds the reference voltage, based on a pulse width which represents a time period from when the electric signal exceeds the reference voltage, up to when the electric signal falls below the reference voltage.

Abstract: A rare earth fluoride solid solution material (polycrystal and/or single crystal) characterized in that the material is obtained by mutually combining a plurality of rare earth fluorides having phase transitions and having different ion radii, respectively, so that the rare earth fluoride solid solution material is free of phase transitions. A rare earth fluoride solid solution material (polycrystal and/or single crystal) characterized in that the material is represented by (REyRE?1?y)F3 (0.0000<y<1.0000), wherein RE represents one or two or more selected from Sm, Eu, and Gd, and RE? represents one or two or more selected from Er, Tm, Yb, Lu, and Y. A rare earth fluoride solid solution material (polycrystal and/or single crystal) represented by MxREyRE?1?x?yFz., wherein RE is one or two or more selected from Ce, Pr, Nd, Eu, Tb, Ho, Er, Tm, or Yb, RE? is one or two or more selected from La, Sm, Gd, Dy, Lu, Y, and Sc, and M is one or more of Mg, Ca, Sr, and Ba.

Abstract: The present invention provides an oxide-base scintillator single crystal having an extremely large energy of light emission, adoptable to X-ray CT and radioactive ray transmission inspection apparatus, and more specifically to provide a Pr-containing, garnet-type oxide single crystal, a Pr-containing perovskite-type oxide single crystal, and a Pr-containing silicate oxide single crystal allowing detection therefrom light emission supposedly ascribable to 5d-4f transition of Pr.

Abstract: A rare earth fluoride solid solution material (polycrystal and/or single crystal) characterized in that the material is obtained by mutually combining a plurality of rare earth fluorides having phase transitions and having different ion radii, respectively, so that the rare earth fluoride solid solution material is free of phase transitions. A rare earth fluoride solid solution material (polycrystal and/or single crystal) characterized in that the material is represented by (REyRE?1-y)F3 (0.0000<y<1.0000), wherein RE represents one or two or more selected from Sm, Eu, and Gd, and RE? represents one or two or more selected from Er, Tm, Yb, Lu, and Y. A rare earth fluoride solid solution material (polycrystal and/or single crystal) represented by MxREyRE?1-x-yFz, wherein RE is one or two or more selected from Ce, Pr, Nd, Eu, Tb, Ho, Er, Tm, or Yb, RE? is one or two or more selected from La, Sm, Gd, Dy, Lu, Y, and Sc, and M is one or more of Mg, Ca, Sr, and Ba.