Patents by Inventor Kei Kaneko
Kei Kaneko has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20200274331Abstract: A semiconductor laser wafer includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, and a composition evaluation layer. The active layer is provided on the first semiconductor layer; multiple periods of pairs of a light-emitting multi-quantum well region and an injection multi-quantum well region are stacked in the active layer; the light-emitting multi-quantum well region is made of a first compound semiconductor and a second compound semiconductor. The second semiconductor layer is provided on the active layer. The composition evaluation layer is provided above the active layer and includes a first film and a second film; the first film is made of the first compound semiconductor and has a first thickness; and the second film is made of the second compound semiconductor and has a second thickness.Type: ApplicationFiled: December 5, 2019Publication date: August 27, 2020Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Kei KANEKO, Shinji SAITO, Rei HASHIMOTO, Tsutomu KAKUNO, Yuichiro YAMAMOTO, Tomohiro TAKASE
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Publication number: 20200176953Abstract: A quantum cascade laser of an embodiment includes a semiconductor stacked body in which a ridge waveguide is provided. The semiconductor stacked body includes an active layer including a quantum well region including a layer including Al; and the active layer emits laser light. The layer that includes Al includes first regions, and a second region interposed between the first regions; the first region includes Al oxide and reaches a prescribed depth inward from an outer edge of the active layer along a direction parallel to a surface of the active layer in a cross section orthogonal to the optical axis; and the second region does not include Al oxide.Type: ApplicationFiled: December 3, 2019Publication date: June 4, 2020Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Rei Hashimoto, Shinji Saito, Tomohiro Takase, Tsutomu Kakuno, Yuichiro Yamamoto, Kei Kaneko
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Patent number: 10630059Abstract: A surface emitting quantum cascade laser includes an active layer and a first semiconductor layer. The active layer includes a plurality of quantum well layers and is capable of emitting laser light by intersubband transition. The first surface includes an internal region and an outer peripheral region. Grating pitch of the first pits is m times grating pitch of the second pits. The outer peripheral region surrounds the internal region. A first planar shape of an opening end of the first pit is asymmetric with respect to a line passing through barycenter of the first planar shape and is parallel to at least one side of the first two-dimensional grating. A second planar shape of an opening end of the second pit is symmetric with respect to each of lines passing through barycenter of the second planar shape and is parallel to either side of the second two-dimensional grating.Type: GrantFiled: August 12, 2019Date of Patent: April 21, 2020Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Shinji Saito, Tsutomu Kakuno, Rei Hashimoto, Kei Kaneko, Yasunobu Kai
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Publication number: 20200006922Abstract: A surface emitting quantum cascade laser includes an active layer and a first semiconductor layer. The active layer includes a plurality of quantum well layers and is capable of emitting laser light by intersubband transition. The first surface includes an internal region and an outer peripheral region. Grating pitch of the first pits is m times grating pitch of the second pits. The outer peripheral region surrounds the internal region. A first planar shape of an opening end of the first pit is asymmetric with respect to a line passing through barycenter of the first planar shape and is parallel to at least one side of the first two-dimensional grating. A second planar shape of an opening end of the second pit is symmetric with respect to each of lines passing through barycenter of the second planar shape and is parallel to either side of the second two-dimensional grating.Type: ApplicationFiled: August 12, 2019Publication date: January 2, 2020Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Shinji SAITO, Tsutomu KAKUNO, Rei HASHIMOTO, Kei KANEKO, Yasunobu KAI
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Patent number: 10490979Abstract: A substrate including a photonic crystal has a compound semiconductor, dielectric layers, and a first semiconductor layer. The dielectric layers are provided on a surface of the compound semiconductor substrate and disposed at each grating point of a two-dimensional diffraction grating, each of the dielectric layers having an asymmetric shape in relation to at least one edge of the two-dimensional diffraction grating and having a refractive index lower than a refractive index of the compound semiconductor substrate. The first semiconductor layer includes a flat first face covering the dielectric layers and the surface of the compound semiconductor substrate, a layer constituting the first face containing a material capable of being lattice matched to a material constituting the compound semiconductor substrate.Type: GrantFiled: December 27, 2017Date of Patent: November 26, 2019Assignee: Kabushiki Kaisha ToshibaInventors: Rei Hashimoto, Shinji Saito, Tsutomu Kakuno, Kei Kaneko, Yasunobu Kai, Naotada Okada
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Patent number: 10490977Abstract: A surface-emitting quantum cascade laser of an embodiment comprises a substrate, an active layer, and a photonic crystal layer. The active layer has optical nonlinearity, and is capable of emitting a first and a second infrared laser light. The photonic crystal layer includes a first and a second region. The rectangular grating of the first region is orthogonal to the rectangular grating of the second region. The first infrared laser light has a wavelength corresponding to a maximum gain outside a first photonic bandgap in a direction parallel to a first side of two sides constituting the rectangular grating. The second infrared laser light has a wavelength corresponding to a maximum gain outside a second photonic bandgap in a direction parallel to a second side of the two sides of the rectangular grating.Type: GrantFiled: November 9, 2018Date of Patent: November 26, 2019Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Rei Hashimoto, Shinji Saito, Yuichiro Yamamoto, Tsutomu Kakuno, Kei Kaneko, Tomohiro Takase
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Patent number: 10424899Abstract: A surface emitting quantum cascade laser includes an active layer and a first semiconductor layer. The active layer includes a plurality of quantum well layers and is capable of emitting laser light by intersubband transition. The first surface includes an internal region and an outer peripheral region. Grating pitch of the first pits is m times grating pitch of the second pits. The outer peripheral region surrounds the internal region. A first planar shape of an opening end of the first pit is asymmetric with respect to a line passing through barycenter of the first planar shape and is parallel to at least one side of the first two-dimensional grating. A second planar shape of an opening end of the second pit is symmetric with respect to each of lines passing through barycenter of the second planar shape and is parallel to either side of the second two-dimensional grating.Type: GrantFiled: September 4, 2018Date of Patent: September 24, 2019Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Shinji Saito, Tsutomu Kakuno, Rei Hashimoto, Kei Kaneko, Yasunobu Kai
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Publication number: 20190199064Abstract: A substrate including a photonic crystal has a compound semiconductor, dielectric layers, and a first semiconductor layer. The dielectric layers are provided on a surface of the compound semiconductor substrate and disposed at each grating point of a two-dimensional diffraction grating, each of the dielectric layers having an asymmetric shape in relation to at least one edge of the two-dimensional diffraction grating and having a refractive index lower than a refractive index of the compound semiconductor substrate. The first semiconductor layer includes a flat first face covering the dielectric layers and the surface of the compound semiconductor substrate, a layer constituting the first face containing a material capable of being lattice matched to a material constituting the compound semiconductor substrate.Type: ApplicationFiled: December 27, 2017Publication date: June 27, 2019Applicant: Kabushiki Kaisha ToshibaInventors: Rei HASHIMOTO, Shinji Saito, Tsutomu Kakuno, Kei Kaneko, Yasunobu Kai, Naotada Okada
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Publication number: 20190199065Abstract: A quantum cascade laser has an active layer, a first and second cladding layer, and an optical guide layer. The active layer has a plurality of injection quantum well regions and a plurality of light-emitting quantum well regions. The each of the injection quantum well regions and the each of the light-emitting quantum well regions are alternatively stacked. The first and second cladding layers are provided to interpose the active layer from both sides, and have a refractive index lower than an effective refractive index of the each of the light-emitting quantum well regions. The optical guide layer is disposed to divide the active layer into two parts. The optical guide layer has a refractive index higher than the effective refractive index of the each of the light-emitting quantum well regions, and has a thickness greater than the thickness of all well layers of quantum well layers.Type: ApplicationFiled: December 27, 2017Publication date: June 27, 2019Applicant: Kabushiki Kaisha ToshibaInventors: Shinji SAITO, Tsutomu KAKUNO, Rei HASHIMOTO, Kei KANEKO
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Publication number: 20190148912Abstract: A surface-emitting quantum cascade laser of an embodiment comprises a substrate, an active layer, and a photonic crystal layer. The active layer has optical nonlinearity, and is capable of emitting a first and a second infrared laser light. The photonic crystal layer includes a first and a second region. The rectangular grating of the first region is orthogonal to the rectangular grating of the second region. The first infrared laser light has a wavelength corresponding to a maximum gain outside a first photonic bandgap in a direction parallel to a first side of two sides constituting the rectangular grating. The second infrared laser light has a wavelength corresponding to a maximum gain outside a second photonic bandgap in a direction parallel to a second side of the two sides of the rectangular grating.Type: ApplicationFiled: November 9, 2018Publication date: May 16, 2019Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Rei HASHIMOTO, Shinji SAITO, Yuichiro YAMAMOTO, Tsutomu KAKUNO, Kei KANEKO, Tomohiro TAKASE
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Publication number: 20190081456Abstract: A semiconductor laser device includes an active layer, a first layer, and a surface metal film. Multiple quantum well layers are stacked in the active layer; and the active layer is configured to emit laser light of a terahertz wave by an intersubband transition. The first layer is provided on the active layer and includes a first surface in which multiple pits are provided to form a two-dimensional lattice. The surface metal film is provided on the first layer and includes multiple openings. Each of the pits is asymmetric with respect to a line parallel to a side of the lattice. The laser light passes through the multiple openings and is emitted in a direction substantially perpendicular to the active layer.Type: ApplicationFiled: September 2, 2016Publication date: March 14, 2019Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Osamu YAMANE, Shinji SAITO, Tsutomu KAKUNO, Kei KANEKO, Rei HASHIMOTO
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Publication number: 20190074663Abstract: A surface emitting quantum cascade laser includes an active layer and a first semiconductor layer. The active layer includes a plurality of quantum well layers and is capable of emitting laser light by intersubband transition. The first surface includes an internal region and an outer peripheral region. Grating pitch of the first pits is m times grating pitch of the second pits. The outer peripheral region surrounds the internal region. A first planar shape of an opening end of the first pit is asymmetric with respect to a line passing through barycenter of the first planar shape and is parallel to at least one side of the first two-dimensional grating. A second planar shape of an opening end of the second pit is symmetric with respect to each of lines passing through barycenter of the second planar shape and is parallel to either side of the second two-dimensional grating.Type: ApplicationFiled: September 4, 2018Publication date: March 7, 2019Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Shinji SAITO, Tsutomu KAKUNO, Rei HASHIMOTO, Kei KANEKO, Yasunobu KAI
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Patent number: 9472720Abstract: A nitride semiconductor wafer includes a silicon substrate, a first layer, a second layer, a third layer, a fourth layer, a fifth layer, and a sixth layer. The first layer is provided on the silicon substrate. The second layer is provided on the first layer. The third layer is provided on the second layer. The fourth layer is provided on the third layer. The fifth layer is provided on the fourth layer. The sixth layer is provided on the fifth layer. A composition ratio x4 of the fourth layer decreases in a first direction from the third layer toward the fifth layer. A maximum value of the composition ratio x4 is not more than a composition ratio of the third layer. A minimum value of the composition ratio x4 is not less than a composition ratio of the fifth layer.Type: GrantFiled: April 29, 2016Date of Patent: October 18, 2016Assignee: Kabushiki Kaisha ToshibaInventors: Kei Kaneko, Mitsuhiro Kushibe, Hiroshi Katsuno, Shinji Yamada, Jumpei Tajima, Yasuo Ohba
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Publication number: 20160247968Abstract: A nitride semiconductor wafer includes a silicon substrate, a first layer, a second layer, a third layer, a fourth layer, a fifth layer, and a sixth layer. The first layer is provided on the silicon substrate. The second layer is provided on the first layer. The third layer is provided on the second layer. The fourth layer is provided on the third layer. The fifth layer is provided on the fourth layer. The sixth layer is provided on the fifth layer. A composition ratio x4 of the fourth layer decreases in a first direction from the third layer toward the fifth layer. A maximum value of the composition ratio x4 is not more than a composition ratio of the third layer. A minimum value of the composition ratio x4 is not less than a composition ratio of the fifth layer.Type: ApplicationFiled: April 29, 2016Publication date: August 25, 2016Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Kei KANEKO, Mitsuhiro KUSHIBE, Hiroshi KATSUNO, Shinji YAMADA, Jumpei TAJIMA, Yasuo OHBA
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Patent number: 9373752Abstract: A semiconductor light-emitting element includes, a first semiconductor layer, a second semiconductor layer, a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer, a first electrode connected to the first semiconductor layer, and a second electrode provided on the second semiconductor layer. A side of the second electrode facing to the second semiconductor layer is composed of at least any one of silver and silver alloy. The second electrode has a void having a width of emission wavelength or less of the light-emitting layer in a plane of the second electrode facing to the second semiconductor layer.Type: GrantFiled: April 4, 2014Date of Patent: June 21, 2016Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Hiroshi Katsuno, Yasuo Ohba, Kei Kaneko
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Patent number: 9373753Abstract: According to one embodiment, a semiconductor light emitting device includes a stacked structure body and an electrode. The stacked structure body has a first conductivity type first semiconductor layer including a nitride-based semiconductor, a second conductivity type second semiconductor layer including a nitride-based semiconductor, and a light emitting layer provided between the first and second semiconductor layers. The electrode has first, second and third metal layers. The first metal layer is provided on the second semiconductor layer and includes silver or silver alloy. The second metal layer is provided on the first metal layer and includes at least one element of platinum, palladium, rhodium, iridium, ruthenium, osmium. The third metal layer is provided on the second metal layer. A thickness of the third metal layer along a direction from the first toward the second semiconductor layer is equal to or greater than a thickness of the second metal layer.Type: GrantFiled: November 19, 2014Date of Patent: June 21, 2016Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Hiroshi Katsuno, Yasuo Ohba, Shinji Yamada, Mitsuhiro Kushibe, Kei Kaneko
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Patent number: 9362115Abstract: A nitride semiconductor wafer includes a silicon substrate, a first layer, a second layer, a third layer, a fourth layer, a fifth layer, and a sixth layer. The first layer is provided on the silicon substrate. The second layer is provided on the first layer. The third layer is provided on the second layer. The fourth layer is provided on the third layer. The fifth layer is provided on the fourth layer. The sixth layer is provided on the fifth layer. A composition ratio x4 of the fourth layer decreases in a first direction from the third layer toward the fifth layer. A maximum value of the composition ratio x4 is not more than a composition ratio of the third layer. A minimum value of the composition ratio x4 is not less than a composition ratio of the fifth layer.Type: GrantFiled: July 21, 2015Date of Patent: June 7, 2016Assignee: Kabushiki Kaisha ToshibaInventors: Kei Kaneko, Mitsuhiro Kushibe, Hiroshi Katsuno, Shinji Yamada, Jumpei Tajima, Yasuo Ohba
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Patent number: 9324918Abstract: A semiconductor light emitting device includes: a stacked structure unit including first and second semiconductor layers and a light emitting layer between the first and second semiconductor layers; a first electrode on a first major surface of the stacked structure unit on the second semiconductor layer side to connect to the first semiconductor layer; and a second electrode on the first major surface of the stacked structure unit to connect to the second semiconductor layer. The second electrode includes: a first film on the second semiconductor layer and a second film on a rim of the first film. The first film has a relatively lower contact resistance with the second semiconductor layer, compared to the second film. A distance from an outer edge of the second film to the first film is smaller at a central portion than at a peripheral portion of the first major surface.Type: GrantFiled: July 16, 2013Date of Patent: April 26, 2016Assignee: Kabushiki Kaisha ToshibaInventors: Hiroshi Katsuno, Yasuo Ohba, Kei Kaneko, Mitsuhiro Kushibe
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Publication number: 20160079480Abstract: A semiconductor light-emitting device includes a first layer having a first surface and an opposing second surface. The first surface has a roughness including a bottom portion and a top portion. A light emitting layer is provided between the second surface and a second layer. An insulating layer is provided on the first surface. The insulating layer includes a first portion adjacent to the bottom portion and a second portion adjacent to the top portion along the first direction. The first portion has a thickness that is greater than a thickness of the second portion.Type: ApplicationFiled: March 1, 2015Publication date: March 17, 2016Inventors: Kei KANEKO, Rei HASHIMOTO, Satoshi MITSUGI, Chie HONGO
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Publication number: 20160079473Abstract: A semiconductor light emitting element includes a first layer, a second layer, an intermediate layer, and a third layer. The first layer has a first surface having roughness including concave portions of which side surfaces are inclined and a second surface on an opposite side to the first surface. The first layer includes a first conductive-type first semiconductor layer. The second layer includes a second conductive-type second semiconductor layer. The intermediate layer is provided between the second surface and the second layer. The third layer is provided in the concave portions.Type: ApplicationFiled: March 2, 2015Publication date: March 17, 2016Inventors: Rei HASHIMOTO, Kei KANEKO, Satoshi MITSUGI, Chie HONGO