Patents by Inventor Kei Kirita

Kei Kirita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and apparatus for forming resist pattern
    Patent number: 5051338
    Abstract: A method for forming a highly precise resist pattern with good reproducibility has the steps of: applying a resist material to a substrate to form a resist film; baking the resist film; cooling the resist film in a controlled manner; selectively irradiating the resist film with one of electromagnetic waves in a predetermined wavelength range and particle beam having predetermined energy; and developing the resist film to form a resist pattern.
    Type: Grant
    Filed: November 27, 1989
    Date of Patent: September 24, 1991
    Assignee: Tokyo Shibaura Denki Kabushiki Kaisha
    Inventors: Yoshihide Kato, Kei Kirita, Toshiaki Shinozaki, Fumiaki Shigemitsu, Kinya Usuda, Takashi Tsuchiya
  • Method and apparatus for forming resist pattern
    Patent number: 4897337
    Abstract: A method for forming a highly precise resist pattern with good reproducibility has the steps of: applying a resist material to a substrate to form a resist film; baking the resist film; cooling the resist film in a controlled manner; selectively irradiating the resist film with one of electromagnetic waves in a predetermined wavelength range and particle beam having predetermined energy; and developing the resist film to form a resist pattern.
    Type: Grant
    Filed: October 15, 1987
    Date of Patent: January 30, 1990
    Assignee: Tokyo Shibaura Denki Kabushiki Kaisha
    Inventors: Yoshihide Kato, Kei Kirita, Toshiaki Shinozaki, Fumiaki Shigemitsu, Kinya Usuda, Takashi Tsuchiya
  • Method and apparatus for forming resist pattern
    Patent number: 4717645
    Abstract: A method for forming a highly precise resist pattern with good reproducibility has the steps of: applying a resist material to a substrate to form a resist film; baking the resist film; cooling the resist film in a controlled manner; selectively irradiating the resist film with one of the electromagnetic waves in a predetermined wavelength range and particle beam having predetermined energy; and developing the resist film to form a resist pattern.
    Type: Grant
    Filed: October 22, 1985
    Date of Patent: January 5, 1988
    Assignee: Tokyo Shibaura Denki Kabushiki Kaisha
    Inventors: Yoshihide Kato, Kei Kirita, Toshiaki Shinozaki, Fumiaki Shigemitsu, Kinya Usuda, Takashi Tsuchiya
  • Method for producing metal ions
    Patent number: 4496843
    Abstract: The invention provides a method for producing metal ions, having the steps of: producing a gas containing a metal element by evaporation of a liquid organic metal compound; introducing the gas containing the metal element and an auxiliary gas for cleaning into the ionization chamber; and producing the metal ions by ionizing the metal element by a discharge. According to this method, the metal ions are produced easily and quickly with good controllability.
    Type: Grant
    Filed: May 27, 1982
    Date of Patent: January 29, 1985
    Assignee: Tokyo Shibaura Denki Kabushiki Kaisha
    Inventors: Kei Kirita, Katuo Koike
  • Method of making a semiconductor device
    Patent number: 4063973
    Abstract: A non-monocrystalline semiconductor layer which contains predetermined impurities is disposed on a semiconductor substrate. Then, on this semiconductor layer an oxide layer is formed which contains the same type impurities as in the semiconductor layer. The device is then heated at a high temperature, thus causing the impurities to diffuse into the semiconductor substrate and form impurity diffused regions. Suitable electrodes are deposited on the impurity diffused regions.
    Type: Grant
    Filed: November 4, 1976
    Date of Patent: December 20, 1977
    Assignee: Tokyo Shibaura Electric Co., Ltd.
    Inventors: Kei Kirita, Yasutaka Tsuji, Takahiko Moriya