Abstract: A flow path from outer gas introduction apertures 144a to inner gas introduction apertures 134a has a narrower-width flow passage formed by an inner wall member 150. This structure effectively lowers the probability that a liquid, such as water, entering from the outer gas introduction apertures 144a passes through a gas inflow chamber 122 and reaches a sensor element 110, compared with a structure without the inner wall member 150. The inner wall member 150 is formed as a solid member that is capable of storing the surrounding heat. Even if there is a certain event that has the potential of causing a temperature decrease of the sensor element 110, for example, an abrupt change in flow rate of an object gas, the heat stored in the inner wall member 150 effectively prevents a temperature decrease of the sensor element 110. This structure prevents the occurrence of cracking in the sensor element 110, compared with a conventional sensor structure having a double-layered protective cover.

Abstract: A gas sensor, that represses a manufacturing cost, obtains high responsiveness and can effectively reduce adhesion of water to a sensor element and intrusion of water into the sensor element, is provided. In the gas sensor that has the sensor element mainly containing a solid electrolyte with oxygen ion conductivity and a protective cover arranged to surround the sensor element and detects a predetermined gas component in a measurement gas, the protective cover includes an inner protective cover that is formed into a bottomed cylindrical shape, has a plurality of inner gas distributing holes formed in two rows on its side surface in a longitudinal direction of the sensor element and surrounds one front end of the sensor element, and an outer protective cover that is formed into a bottomed cylindrical shape, has a plurality of outer gas distributing holes on its side surface and surrounds the inner protective cover.

Abstract: There is provided an inkjet printing apparatus which can output a stable image without density unevenness by performing appropriate drive control to print elements based upon an appropriate representative temperature of a chip whatever image data is printed on a print medium. For this purpose, detection temperatures of a plurality of temperature sensors are lined up in high temperature order, and coefficients by which the respective detection temperatures are multiplied, are determined to be associated with that order at the lining-up, determining a representative temperature by the weighted average method. The common drive pulse associated with to the individual chip based upon the representative temperature thus obtained, to be applied thereto. Thereby even if temperature variations of print elements on the chip exist, it is possible to appropriately control the entire chip in temperature.

Abstract: An inkjet recording apparatus includes a recording head configured to discharge ink, a first ink tank configured to store ink to be supplied to the recording head, a circulation path configured to circulate ink between the first ink tank and the recording head, a measurement unit configured to measure an ink temperature in the circulation path, a second ink tank configured to replenish ink to the circulation path, and a control unit configured to control replenishment of ink from the second ink tank to the circulation path based on the ink temperature measured by the measurement unit.

Abstract: An apparatus includes a printing unit configured to eject ink from a print head onto a sheet conveyed in a direction to perform printing on the sheet; a conveying unit configured to be provided on a downstream side of the print head in the direction, and configured to include a rotating member in contact with the sheet; and a reading unit configured to read a surface of the sheet on a downstream side of the rotating member in the direction, in which information on ink adhesion to the rotating member is obtained based on a result read by the reading unit.

Abstract: According to the present invention, each printing head includes chips wherein a plurality of nozzles are prepared. The density of dots formed by ejecting ink from the nozzles is detected for each chip, and when a density difference between the chips is smaller than a predetermined value, print data are corrected, and the number of dots is adjusted so as to reduce the density difference. When the density difference is equal to or greater than the predetermined value, first, a drive pulse for the nozzles is modulated and the volume of ink to be ejected for one dot is adjusted so as to reduce the density difference. Thereafter, the print data is corrected, and the number of dots to be formed is controlled so as to reduce the density difference.

Abstract: A printing apparatus conducts inspection associated with printing by changing a relative positional relationship between a line print head and a sheet feeding position for a sheet in a direction perpendicular to a direction in which the sheet is fed, forming an image on the sheet using the line print head a plurality of times, and reading the formed images using a reading unit.

Abstract: A printing apparatus includes a full-line printhead in which a plurality of chips, on each of which a plurality of nozzle arrays are juxtaposed, are arranged in the nozzle arrayed direction, and which prints by the entire width of a printing medium using a plurality of nozzles arranged on the plurality of chips. The printing apparatus discharges ink from a predetermined number of successive nozzles on each nozzle array of each chip toward a printing medium during conveyance, thereby forming a plurality of first patterns corresponding to at least one nozzle array of each chip on the printing medium in the nozzle arrayed direction, reads the plurality of first patterns from the printing medium during conveyance using a sensor, calculates the shift amount of an ink attached position based on the plurality of read first patterns and corrects the attached position of ink based on the shift amount.

Abstract: When distributing image data of a plurality of planes to a first chip and a second chip that constitute the same overlapped portion of a connected head, a distribution method is changed for at least a part of the plurality of planes.

Abstract: The sensor element 110, which can detect the concentration of a specified gas, is held with a housing 102 with a front end thereof exposed. A protective cover 120 includes an inner cover 130 and an outer cover 140, and secured to the housing 102. A ratio ?1/?2 is set to a range from 0.6 to 0.9, where ?1 represents an outer diameter of a portion where an inner gas aperture 134a is formed in the inner cover 130, and ?2 represents an inner diameter of a portion where an outer gas aperture 144a is formed in the outer cover 140.

Abstract: First outer gas apertures 144a are arranged in a first corner 144b such that the outer opening plane of each first outer gas aperture 144a forms an angle of 45 degrees with a bottom face of a step element 145 and the outer opening plane forms an angle of 90 degrees with an inner circumferential face of the first outer gas aperture 144a. Second outer gas apertures are arranged in a second corner 146b such that the outer opening plane of each second outer gas aperture 146a forms an angle of 45 degrees with a bottom face of an edge section 146 and the outer opening plane forms an angle of 90 degrees with an inner circumferential face of the second outer gas aperture 146a. This structure prevents water from adhering to a sensor element 110 and thereby enhances the response of a gas sensor 110.

Abstract: A flow path from outer gas introduction apertures 144a to inner gas introduction apertures 134a has a narrower-width flow passage formed by an inner wall member 150. This structure effectively lowers the probability that a liquid, such as water, entering from the outer gas introduction apertures 144a passes through a gas inflow chamber 122 and reaches a sensor element 110, compared with a structure without the inner wall member 150. The inner wall member 150 is formed as a solid member that is capable of storing the surrounding heat. Even if there is a certain event that has the potential of causing a temperature decrease of the sensor element 110, for example, an abrupt change in flow rate of an object gas, the heat stored in the inner wall member 150 effectively prevents a temperature decrease of the sensor element 110. This structure prevents the occurrence of cracking in the sensor element 110, compared with a conventional sensor structure having a double-layered protective cover.

Abstract: A gas sensor, that represses a manufacturing cost, obtains high responsiveness and can effectively reduce adhesion of water to a sensor element and intrusion of water into the sensor element, is provided. In the gas sensor that has the sensor element mainly containing a solid electrolyte with oxygen ion conductivity and a protective cover arranged to surround the sensor element and detects a predetermined gas component in a measurement gas, the protective cover includes an inner protective cover that is formed into a bottomed cylindrical shape, has a plurality of inner gas distributing holes formed in two rows on its side surface in a longitudinal direction of the sensor element and surrounds one front end of the sensor element, and an outer protective cover that is formed into a bottomed cylindrical shape, has a plurality of outer gas distributing holes on its side surface and surrounds the inner protective cover.

Abstract: A method for preparing an AlGaN crystal layer with good surface flatness is provided. A surface layer of AlN is epitaxially formed on a c-plane sapphire single crystal base material by MOCVD method, and the resulting laminated body is then heated at a temperature of 1300° C. or higher so that a template substrate applying in-plane compressive stress and having a surface layer flat at a substantially atomic level is obtained. An AlGaN layer is formed on the template substrate at a deposition temperature higher than 1000° C. by an MOCVD method that includes depositing alternating layers of a first unit layer including a Group III nitride represented by the composition formula AlxGa1-xN (0?x?1) and a second unit layer including a Group III nitride represented by the composition formula AlyGa1-yN (0?y?1 and y?x) such that the AlGaN layer has a superlattice structure.

Abstract: An electron-emitting device includes an emitter section composed of a dielectric material, a lower electrode disposed on the lower side of the emitter section, and an upper electrode disposed on the upper side of the emitter section so as to be opposed to the lower electrode with the emitter section therebetween, electrons being emitted from the emitter section through the upper electrode by the application of a drive voltage between the lower electrode and the upper electrode, wherein the upper electrode is provided with a plurality of through-holes which expose the emitter section and which have an average diameter of 10 nm or more and less than 100 nm, and a peripheral portion of each through-hole facing the emitter section is separated at a predetermined distance from the emitter section.

Abstract: There is provided a method for preparing an AlGaN crystal layer having an excellent surface flatness. A buffer layer effective in stress relaxation is formed on a template substrate having a surface layer that is flat at a substantially atomic level and to which in-plane compressive stress is applied, and an AlGaN layer is formed on the buffer layer, so that an AlGaN layer can be formed that is flat at a substantially atomic level. Particularly when the surface layer of the template substrate includes a first AlN layer, a second AlN layer may be formed thereon at a temperature of 600° C. or lower, while a mixed gas of TMA and TMG is supplied in a TMG/TMA mixing ratio of 3/17 or more to 6/17 or less, so that a buffer layer effective in stress relaxation the can be formed in a preferred manner.

Abstract: A method for preparing an AlGaN crystal layer with good surface flatness is provided. A surface layer of AlN is epitaxially formed on a c-plane sapphire single crystal base material by MOCVD method, and the resulting laminated body is then heated at a temperature of 1300° C. or higher so that a template substrate applying in-plane compressive stress and having a surface layer flat at a substantially atomic level is obtained. An AlGaN layer is formed on the template substrate at a deposition temperature higher than 1000° C. by an MOCVD method that includes depositing alternating layers of a first unit layer including a Group III nitride represented by the composition formula AlxGa1-xN (0?x?1) and a second unit layer including a Group III nitride represented by the composition formula AlyGa1-yN (0?y?1 and y?x) such that the AlGaN layer has a superlattice structure.

Abstract: There is provided a method for preparing an AlGaN crystal layer having an excellent surface flatness. A buffer layer effective in stress relaxation is formed on a template substrate having a surface layer that is flat at a substantially atomic level and to which in-plane compressive stress is applied, and an AlGaN layer is formed on the buffer layer, so that an AlGaN layer can be formed that is flat at a substantially atomic level. Particularly when the surface layer of the template substrate includes a first AlN layer, a second AlN layer may be formed thereon at a temperature of 600° C. or lower, while a mixed gas of TMA and TMG is supplied in a TMG/TMA mixing ratio of 3/17 or more to 6/17 or less, so that a buffer layer effective in stress relaxation the can be formed in a preferred manner.

Abstract: An electron-emitting device includes an emitter section composed of a dielectric material, a lower electrode disposed on the lower side of the emitter section, and an upper electrode disposed on the upper side of the emitter section so as to be opposed to the lower electrode with the emitter section therebetween, electrons being emitted from the emitter section through the upper electrode by the application of a drive voltage between the lower electrode and the upper electrode, wherein the upper electrode is provided with a plurality of through-holes which expose the emitter section and which have an average diameter of 10 nm or more and less than 100 nm, and a peripheral portion of each through-hole facing the emitter section is separated at a predetermined distance from the emitter section.