Abstract: The present disclosure provides a technique that enables customization of a vehicle. In an information processing apparatus, a controller presents vehicle units extracted from among a plurality of types of under units each of which is provided with a driving mechanism configured to cause wheels to rotate and a plurality of types of upper units to be loaded on any of the under units to a user, the vehicle units being combinable as a vehicle. Furthermore, the controller executes: accepting selection by a user from among the presented vehicle units; and calculating a fee in the case of providing the selected vehicle units.

Abstract: An information processing apparatus disclosed has a controller configured to execute the processing of, when a first vehicle body unit on which a first vending machine is mounted is laid at a specific place, determining a time for maintenance defined as a time to perform maintenance of the first vending machine, and sending a replacement command to a chassis unit that is configured in such a way as to be capable of travelling autonomously and being coupled to and separated from a vehicle body unit, as per the time for maintenance. The replacement command is a command to transport a second vehicle body unit on which a second vending machine is mounted to the specific place and retrieve the first vehicle body unit from the specific place.

Abstract: The present invention is a method for producing a porous metal body or a method for producing an electrode catalyst, which is capable of simplifying the production process and improving the production efficiency by not requiring a step of immersion in an acid treatment solution. A method for producing a porous metal body according to the present invention comprises: a step for forming a metal resin-containing layer, which contains a metal and a resin that has a lower melting point than the metal, on a base; and a step for obtaining a porous metal body by subjecting the metal resin-containing layer to a heat treatment, thereby sintering the metal and removing the resin from the metal resin-containing layer.

Abstract: A differential voltage measurement device includes a first capacitor, a second capacitor of which the capacity is smaller than that of the first capacitor, a differential amplification unit which outputs a voltage according to a differential voltage between a voltage held in the first capacitor and a voltage held in the second capacitor, and a control unit which guides a first voltage to the first capacitor and guides a second voltage to the second capacitor in a state where the first capacitor holds the first voltage.

Abstract: Provided is a battery state detection device suitable for detecting a state of a battery mounted on a vehicle. A ?COM uses a first capacitor to measure a first sample of battery voltage, and after a predetermined standby time has elapsed, executes sample hold processing using the second capacitor for performing the second sample hold of the battery voltage. The ?COM detects the state of the battery based on the output of the differential amplifier when a condition is satisfied that the battery current is constant during both the first sample hold and the second sample hold and the battery current fluctuates during the standby time.

Abstract: The present invention is a method for producing a porous metal body or a method for producing an electrode catalyst, which is capable of simplifying the production process and improving the production efficiency by not requiring a step of immersion in an acid treatment solution. A method for producing a porous metal body according to the present invention comprises: a step for forming a metal resin-containing layer, which contains a metal and a resin that has a lower melting point than the metal, on a base; and a step for obtaining a porous metal body by subjecting the metal resin-containing layer to a heat treatment, thereby sintering the metal and removing the resin from the metal resin-containing layer.

Abstract: Provided is a battery state detection device suitable for detecting a state of a battery mounted on a vehicle. A ?COM uses a first capacitor to measure a first sample of battery voltage, and after a predetermined standby time has elapsed, executes sample hold processing using the second capacitor for performing the second sample hold of the battery voltage. The ?COM detects the state of the battery based on the output of the differential amplifier when a condition is satisfied that the battery current is constant during both the first sample hold and the second sample hold and the battery current fluctuates during the standby time.

Abstract: An aspect of the present invention relates to a method of evaluating metal contamination in a semiconductor wafer that has been subjected to a heat treatment, which comprises obtaining analysis values by analyzing a plurality of analysis points on a surface of the semiconductor wafer by a first analysis method or a second analysis method, wherein in the first analysis method, analysis values employed in evaluation decrease as an amount of contamination by a metal element that is to be evaluated increases, and in the second analysis method, analysis values employed in evaluation increase as an amount of contamination by a metal element that is to be evaluated increases, and wherein determination of presence or absence of localized contamination by the metal element that is to be evaluated is made by evaluating the analysis values based on the normal value specified by a probability distribution function.

Abstract: A differential voltage measurement device includes a first capacitor, a second capacitor of which the capacity is smaller than that of the first capacitor, a differential amplification unit which outputs a voltage according to a differential voltage between a voltage held in the first capacitor and a voltage held in the second capacitor, and a control unit which guides a first voltage to the first capacitor and guides a second voltage to the second capacitor in a state where the first capacitor holds the first voltage.

Abstract: An aspect of the present invention relates to a method of evaluating metal contamination in a semiconductor sample by DLTS method, which includes obtaining a first DLTS spectrum by measuring a DLTS signal while varying a temperature, the DLTS signal being generated by alternatively and cyclically applying to a semiconductor junction on a semiconductor sample a reverse voltage VR to form a depletion layer and a weak voltage V1 to trap carriers in the depletion layer; obtaining a second DLTS spectrum by measuring a DLTS signal while varying a temperature, the DLTS signal is being generated by cyclically applying the VR to the semiconductor junction; obtaining a differential spectrum of the first DLTS spectrum with a correction-use spectrum in the form of the second DLTS spectrum or a spectrum that is obtained by approximating the second DLTS spectrum as a straight line or as a curve.

Abstract: An aspect of the present invention relates to a method of evaluating metal contamination in a semiconductor wafer that has been subjected to a heat treatment, which comprises obtaining analysis values by analyzing a plurality of analysis points on a surface of the semiconductor wafer by a first analysis method or a second analysis method, wherein in the first analysis method, analysis values employed in evaluation decrease as an amount of contamination by a metal element that is to be evaluated increases, and in the second analysis method, analysis values employed in evaluation increase as an amount of contamination by a metal element that is to be evaluated increases, and wherein determination of presence or absence of localized contamination by the metal element that is to be evaluated is made by evaluating the analysis values based on the normal value specified by a probability distribution function.

Abstract: An aspect of the present invention relates to a method of evaluating metal contamination in a semiconductor sample by DLTS method, which includes obtaining a first DLTS spectrum by measuring a DLTS signal while varying a temperature, the DLTS signal being generated by alternatively and cyclically applying to a semiconductor junction on a semiconductor sample a reverse voltage VR to form a depletion layer and a weak voltage V1 to trap carriers in the depletion layer; obtaining a second DLTS spectrum by measuring a DLTS signal while varying a temperature, the DLTS signal is being generated by cyclically applying the VR to the semiconductor junction; obtaining a differential spectrum of the first DLTS spectrum with a correction-use spectrum in the form of the second DLTS spectrum or a spectrum that is obtained by approximating the second DLTS spectrum as a straight line or as a curve.

Abstract: In a circuit and method for correcting a delay variation of a subthreshold CMOS circuit operating in a subthreshold region, a power supply voltage controlling circuit is provided for supplying a controlled output voltage to a subthreshold digital CMOS circuit as a controlled power supply voltage. The subthreshold digital CMOS circuit includes CMOS circuits each having a pMOSFET and an nMOSFET and operating in a subthreshold region with a predetermined delay time, and further includes a minute current generator circuit generating a predetermined minute current based on a power supply voltage, and a controlled output voltage generator circuit generating a controlled output voltage for correcting a variation in the delay time based on a generated minute current and supplying the controlled output voltage to the subthreshold digital CMOS circuit as a controlled power supply voltage including a change in each threshold voltage of the pMOSFET and the nMOSFET.

Abstract: To provide a method of removing a heavy metal contained in a thinned semiconductor substrate. A method of removing a heavy metal in a semiconductor substrate of the present invention comprises: attaching, to a rear surface of the semiconductor substrate, a material that lowers a potential barrier of the rear surface of the semiconductor substrate, on a front surface of which a circuit is to be formed or is formed; applying a thermal treatment to the semiconductor substrate under a condition based on a thickness and a resistivity of the semiconductor substrate; and, depositing the heavy metal in the semiconductor substrate on the rear surface.

Abstract: To provide a method of removing a heavy metal contained in a thinned semiconductor substrate. A method of removing a heavy metal in a semiconductor substrate of the present invention comprises: attaching, to a rear surface of the semiconductor substrate, a material that lowers a potential barrier of the rear surface of the semiconductor substrate, on a front surface of which a circuit is to be formed or is formed; applying a thermal treatment to the semiconductor substrate under a condition based on a thickness and a resistivity of the semiconductor substrate; and, depositing the heavy metal in the semiconductor substrate on the rear surface.

Abstract: The invention intends to provide, in BaTiO3 semiconductor porcelain composition, a semiconductor porcelain composition that, without using Pb, can shift the Curie temperature to a positive direction and can significantly reduce the resistivity at room temperature. According to the invention, when Ba is partially substituted by an A1 element (at least one kind of Na, K and Li) and an A2 element (Bi) and Ba is further substituted by a specific amount of a Q element, or when Ba is partially substituted by an A1 element (at least one kind of Na, K and Li) and an A2 element (Bi) and Ti is partially substituted by a specific amount of an M element, the optimal valence control can be applied and whereby the resistivity at room temperature can be significantly reduced. Accordingly, it is optimal for applications in a PTC thermistor, a PTC heater, a PTC switch, a temperature detector and the like, and particularly preferably in an automobile heater.

Abstract: In a circuit and method for correcting a delay variation of a subthreshold CMOS circuit operating in a subthreshold region, a power supply voltage controlling circuit is provided for supplying a controlled output voltage to a subthreshold digital CMOS circuit as a controlled power supply voltage. The subthreshold digital CMOS circuit includes CMOS circuits each having a pMOSFET and an nMOSFET and operating in a subthreshold region with a predetermined delay time, and further includes a minute current generator circuit generating a predetermined minute current based on a power supply voltage, and a controlled output voltage generator circuit generating a controlled output voltage for correcting a variation in the delay time based on a generated minute current and supplying the controlled output voltage to the subthreshold digital CMOS circuit as a controlled power supply voltage including a change in each threshold voltage of the pMOSFET and the nMOSFET.

Abstract: The invention intends to provide, in BaTiO3 semiconductor porcelain composition, a semiconductor porcelain composition that, without using Pb, can shift the Curie temperature to a positive direction and can significantly reduce the resistivity at room temperature. According to the invention, when Ba is partially substituted by an A1 element (at least one kind of Na, K and Li) and an A2 element (Bi) and Ba is further substituted by a specific amount of a Q element, or when Ba is partially substituted by an A1 element (at least one kind of Na, K and Li) and an A2 element (Bi) and Ti is partially substituted by a specific amount of an M element, the optimal valence control can be applied and whereby the resistivity at room temperature can be significantly reduced. Accordingly, it is optimal for applications in a PTC thermistor, a PTC heater, a PTC switch, a temperature detector and the like, and particularly preferably in an automobile heater.

Abstract: The invention intends to provide, in BaTiO3 semiconductor porcelain composition, a semiconductor porcelain composition that, without using Pb, can shift the Curie temperature to a positive direction and can significantly reduce the resistivity at room temperature. According to the invention, when Ba is partially substituted by an A1 element (at least one kind of Na, K and Li) and an A2 element (Bi) and Ba is further substituted by a specific amount of a Q element, or when Ba is partially substituted by an A1 element (at least one kind of Na, K and Li) and an A2 element (Bi) and Ti is partially substituted by a specific amount of an M element, the optimal valence control can be applied and whereby the resistivity at room temperature can be significantly reduced. Accordingly, it is optimal for applications in a PTC thermistor, a PTC heater, a PTC switch, a temperature detector and the like, and particularly preferably in an automobile heater.

Abstract: The invention intends to provide, in BaTiO3 semiconductor porcelain composition, a semiconductor porcelain composition that, without using Pb, can shift the Curie temperature to a positive direction and can significantly reduce the resistivity at room temperature. According to the invention, when Ba is partially substituted by an A1 element (at least one kind of Na, K and Li) and an A2 element (Bi) and Ba is further substituted by a specific amount of a Q element, or when Ba is partially substituted by an A1 element (at least one kind of Na, K and Li) and an A2 element (Bi) and Ti is partially substituted by a specific amount of an M element, the optimal valence control can be applied and whereby the resistivity at room temperature can be significantly reduced. Accordingly, it is optimal for applications in a PTC thermistor, a PTC heater, a PTC switch, a temperature detector and the like, and particularly preferably in an automobile heater.