Abstract: A semiconductor device according to an embodiment includes: a substrate including a plurality of through holes provided at predetermined intervals along a first direction in a substrate surface and along a second direction intersecting the first direction in the substrate surface; an insulating layer provided on the substrate, the insulating layer being penetrated by the through holes; a plurality of first electrodes provided on the insulating layer, the first electrodes being adjacent to the respective through holes in the first direction; a plurality of second electrodes provided on the insulating layer, the second electrodes being adjacent to the respective through holes in the first direction, the second electrodes being provided to face the first electrodes, the second electrodes being held at a predetermined potential; and a wiring layer provided on the insulating layer, the wiring layer electrically connecting the adjacent second electrodes.

Abstract: A semiconductor device according to an embodiment includes: a substrate including a plurality of through holes provided at predetermined intervals along a first direction in a substrate surface and along a second direction intersecting the first direction in the substrate surface; an insulating layer provided on the substrate, the insulating layer being penetrated by the through holes; a plurality of first electrodes provided on the insulating layer, the first electrodes being adjacent to the respective through holes in the first direction; a plurality of second electrodes provided on the insulating layer, the second electrodes being adjacent to the respective through holes in the first direction, the second electrodes being provided to face the first electrodes, the second electrodes being held at a predetermined potential; and a wiring layer provided on the insulating layer, the wiring layer electrically connecting the adjacent second electrodes.

Abstract: According to one embodiment, an electronic device includes a MEMS element provided on an underlying region, and a protection film including a first layer, a second layer provided on the first layer, and a third layer provided on the second layer, the protection film covering the MEMS element and forming a cavity in an inside thereof. An outer periphery of the second layer is located inside an outer periphery of the cavity, as viewed in a direction perpendicular to a surface of the underlying region.

Abstract: According to one embodiment, an electrical component comprises a substrate, a functional element formed on the substrate, a first layer which includes through holes, and forms a cavity that stores the functional element on the substrate, and a second layer which is formed on the first layer, and closes the through holes. The first layer includes a first film, a second film on the first film, and a third film on the second film. A Young's modulus of the second film is higher than a Young's modulus of the first film and the third film.

Abstract: According to one embodiment, an electronic device includes a MEMS element formed on an underlying region, and a stack film covering the MEMS element and forming a cavity part inside, wherein the stack film includes a first layer having a hole, a second layer provided on the first layer and covering the hole, a third layer provided on the second layer and formed of an oxide, and a fourth layer provided on the third layer and formed of a nitride.

Abstract: According to one embodiment, an electrical component comprises a substrate, a functional element formed on the substrate, a first layer which includes through holes, and forms a cavity that stores the functional element on the substrate, and a second layer which is formed on the first layer, and closes the through holes. The first layer includes a first film, a second film on the first film, and a third film on the second film. A Young's modulus of the second film is higher than a Young's modulus of the first film and the third film.

Abstract: According to one embodiment, an optical transmission line holding member includes a holding member body, a plurality of holding holes, a plurality of electrical interconnections, and a plurality of grooves. The holding member body includes an optical semiconductor element mounting surface and an opposite surface thereof and configured to hold optical transmission lines. The holding holes are formed to penetrate between the optical semiconductor element mounting surface of the holding member body and the opposite surface thereof, the holding holes having an opening on the optical semiconductor element mounting surface side. The electrical interconnections are provided on a part of the optical semiconductor element mounting surface and electrically connected to the optical semiconductor element. The grooves are provided adjacent to the openings of the holding holes in a part of a region of the optical semiconductor element mounting surface except a region in which the electrical interconnections.