Abstract: A semiconductor device comprises a semiconductor substrate, an interlayer insulating layer formed above the semiconductor substrate, a first metal interconnection embedded in the interlayer insulating layer with a surface thereof exposed to the same plane as a surface of the interlayer insulating layer, a diffusion preventive layer formed on at least the first metal interconnection to prevent diffusion of a metal included in the first metal interconnection, a nitrogen-doped silicon oxide layer formed on the diffusion preventive layer, a fluorine-doped silicon oxide layer formed on the nitrogen-doped silicon oxide layer, and a second metal interconnection embedded in the fluorine-doped silicon oxide layer with a surface thereof exposed to the same plane as a surface of the fluorine-doped silicon oxide layer, and electrically connected to the first metal interconnection.

Abstract: A high internal aqueous phase water-in-oil type emulsion composition including (a) a high molecular weight polyether-modified silicone having a number average molecular weight of 30,000 or more, (b) a polyether-modified silicone having a number-average molecular weight of 10,000 or less, or a sucrose fatty acid ester and/or polyglyceryl fatty acid ester in the state of liquid at ordinary temperature and having an HLB of 4 or less, (c) a silicone-based oil and (d) an inorganic salt and/or organic salt, having a fresh, sharp feeling in use, and exhibiting an excellent emulsified state, as well as an emulsion cosmetic composition using the same.

Abstract: A semiconductor device comprises a semiconductor substrate, an interlayer insulating layer formed above the semiconductor substrate, a first metal interconnection embedded in the interlayer insulating layer with a surface thereof exposed to the same plane as a surface of the interlayer insulating layer, a diffusion preventive layer formed on at least the first metal interconnection to prevent diffusion of a metal included in the first metal interconnection, a nitrogen-doped silicon oxide layer formed on the diffusion preventive layer, a fluorine-doped silicon oxide layer formed on the nitrogen-doped silicon oxide layer, and a second metal interconnection embedded in the fluorine-doped silicon oxide layer with a surface thereof exposed to the same plane as a surface of the fluorine-doped silicon oxide layer, and electrically connected to the first metal interconnection.

Abstract: A semiconductor device comprises a semiconductor substrate, an interlayer insulating layer formed above the semiconductor substrate, a first metal interconnection embedded in the interlayer insulating layer with a surface thereof exposed to the same plane as a surface of the interlayer insulating layer, a diffusion preventive layer formed on at least the first metal interconnection to prevent diffusion of a metal included in the first metal interconnection, a nitrogen-doped silicon oxide layer formed on the diffusion preventive layer, a fluorine-doped silicon oxide layer formed on the nitrogen-doped silicon oxide layer, and a second metal interconnection embedded in the fluorine-doped silicon oxide layer with a surface thereof exposed to the same plane as a surface of the fluorine-doped silicon oxide layer, and electrically connected to the first metal interconnection.

Abstract: In order to provide a liquid crystal composition and a cosmetic preparation, which is favorable in adaptation to skin and gives smooth feeling in case of using as a skin care product, and which is favorable in adaptation to makeup and has high makeup removing effect in case of using as a make-up remover, and which is favorable in adaptation to hair and has favorable feeling of use to provide glossiness to hair in case of using as a hair care product, a cosmetic preparation of the present invention comprises (A) 10 to 60 wt % of a nonionic surfactant, (B) 1 to 50 wt % in all of one or more of a water-soluble substance having a hydroxyl group, (C) 1 to 70 wt % of a silicone oil, and (D) 10 to 60 wt % of water and has a liquid crystal phase and/or an isotropic surfactant continuous phase.

Abstract: In a method of manufacturing a semiconductor device including a semiconductor element formed on a semiconductor substrate, an SiOF film is formed at least on the top surfaces of metal wirings under condition that an in-chamber pressure is 5 mTorr or lower. The SiOF film can thus be buried into a space between the metal wirings without causing any void and the capacitance between the wirings can be prevented from increasing, while preventing the metal wirings from being damaged and preventing the aspect ratio from increasing.

Abstract: In a wheel suspension of a vehicle such as an automobile assembled from a pair of trailing arms arranged to extend substantially longitudinally of the vehicle in a laterally symmetrical relationship thereto with each front end thereof being pivotably mounted to the vehicle body while each rear end thereof rotatably supporting a corresponding one of either a pair of front wheels or a pair of rear wheels, and a torsion beam arranged to extend substantially laterally of the vehicle between the pair of trailing arms with opposite ends thereof being firmly connected thereto by welding, so as to form a link assembly assembled by a weld seam formed therebetween, the link is formed with at least one notch adjacent to a weld seam for relieving a surface tensile stress exerted across the weld seam according to a force acting between the trailing arms and the torsion beam.

Abstract: An emulsion compositions comprising (i) an alkyl-modified carboxyvinyl polymer, (ii) a C.sub.12 to C.sub.18 higher alcohol solid at room temperature (for example 15.degree. to 20.degree. C.), and (iii) a silicone oil, wherein the weight ratio of the component (i)/component (ii) is not more than 0.5. This emulsion further contains no surfactant.

Abstract: A device for controlling a propagation direction of noise, which is preferably associated with a sound insulating wall to significantly improve its sound reducing effect of alleviating noise emitted from a noise source such as a railroad, highway and the like on which an electric car and automobiles run. The device comprises a hollow structural body composed of a plurality of elongated vertical hollow passages arranged at right angles to a substrate and spaced apart from each other by means of partition walls. The upper noise inlet side surface of the hollow passages face a propagation direction of noise emitted from the noise source and serve to refract and lag in phase the noise passed therethrough, thereby producing a sound reducing region located intermediate between a direct sound propagation and the refracted sound propagation. In one embodiment, a pair of hollow structural bodies are arranged in opposition to each other to form an arch type device.

Abstract: A device for controlling a propagation direction of noise which is preferably associated with a sound insulating wall to significantly improve its sound reducing effect of alleviating noise emitted from a noise source such as a railroad, highway and the like on which an electric car and automobiles run. The device comprises a hollow structural body composed of a plurality of elongate hollow passages superimposed one upon the other and spaced apart from each other. The passages are arranged in a propagation direction of noise emitted from the noise source and serve to refract and lag in phase the noise passed therethrough, thereby producing a sound reducing region located intermediate between a direct propagation sound and the refraction propagation sound.